Patent EP0155699A2 successfully refreshed from Google Patents.
EP0155699A2
Expired / Lapsed
EP
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Semiconductor device having improved multi-layer structure of insulating film and conductive film
Assignee: NEC Corp
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Filing: 1985-03-22
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Granted: —
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Expires: 2005-03-22
Abstract
Abstract A semiconductor device comprises a semiconductor substrate, an insulating film formed on a major surface of the substrate a lower wiring layer formed on the insulating film, a borophosphosilicate glass film covering the lower wiring layer and the insulating film, a phosphosilicate glass film having a low phosphorus concentration and provided on the borophosphosilicate glass film, and a polycrystalline silicon layer doped with an impurity and provided on the phosphosilicate glass. According to the structure, the polycrystalline silicon layer maintains the normal state. Therefore, the silicon layer can be precisely etched for patterning and a wiring layer made of the silicon layer is never moved in a following process step such as thermal step. Further, even if another wiring layer of aluminum is formed on the phosphosilicate glass film, the aluminum wiring layer is not broken above the corner of the lower wiring layer, and is hardly corroded by invaded water into a plastic package.
Inventors
- 👤 Yasushi Okuyama
- 👤 Manzoh Saitoh
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 05:50
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; H10W20/01; H10W20/031; H10W20/071; H10W20/074; H10W20/081; H10W20/082
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
77 words
A semiconductor device comprising a semiconductor substrate, a insulating film formed on a major surface of said semiconductor substrate, a conductive layer shaped in a predetermined pattern and provided on said insulating film, a borophosphosilicate glass film covering said conductive layer and said insulating film, a phosphosilicate glass film having a low phosphorus concentration and provided on borophosphosilicate glass film, and a polycrystalline silicon layer doped with an impurity therein and provided on said phosphosilicate glass film.
Claim 2
Dependent Claim
77 words
A semiconductor device comprising a semiconductor substrate, a insulating film formed on a major surface of said semiconductor substrate, a conductive layer shaped in a predetermined pattern and provided on said insulating film, a borophosphosilicate glass film covering said conductive layer and said insulating film, a phosphosilicate glass film having a low phosphorus concentration and provided on borophosphosilicate glass film, and a polycrystalline silicon layer doped with an impurity therein and provided on said phosphosilicate glass film.
Claim 3
Dependent Claim
28 words
A semiconductor device of claim 1, in which said borophosphosilicate glass film contains phosphorus of 4 to 8 weight percent, and boron of 2 to 12 weight percent.
Claim 4
Dependent Claim
29 words
A semiconductor device of claim 1, in which said phosphosilicate glass film contains phosphorus in 2 to 12 weight percent and has a thickness of 1000 to 3000 angstroms.
Claim 5
Independent Claim
169 words
A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate providing with impurity region of a circuit element therein, forming a first insulating film on a a major surface of the substrate, forming a wiring layer on said first insulating film, depositing a borophosphosilicate glass film on said substrate so as to cover said wiring layer and said first insulating film, subjecting a heat treatment at temperature between 700°C to 1000°C so as to reflow said borophosphosilicate glass film, depositing a phosphosilicate glass film having a low phosphorus concentration on said borophosphosilicate glass film, forming a contact hole in said phosphosilicate glass film, said borophosphosilicate glass film and said first insulating film to expose a surface portion of said impurity region, forming a semiconductor film on said phosphosilicate glass film so as to contact with exposed surface portion of the impurity region through the contact hole, and diffusing an impurity of the same conductivity type as said impurity region into said polycrystalline silicon film.-
Claim 6
Independent Claim
169 words
A method of manufacturing a semiconductor device comprising the steps of preparing a semiconductor substrate providing with impurity region of a circuit element therein, forming a first insulating film on a a major surface of the substrate, forming a wiring layer on said first insulating film, depositing a borophosphosilicate glass film on said substrate so as to cover said wiring layer and said first insulating film, subjecting a heat treatment at temperature between 700°C to 1000°C so as to reflow said borophosphosilicate glass film, depositing a phosphosilicate glass film having a low phosphorus concentration on said borophosphosilicate glass film, forming a contact hole in said phosphosilicate glass film, said borophosphosilicate glass film and said first insulating film to expose a surface portion of said impurity region, forming a semiconductor film on said phosphosilicate glass film so as to contact with exposed surface portion of the impurity region through the contact hole, and diffusing an impurity of the same conductivity type as said impurity region into said polycrystalline silicon film.-
References Cited (Backward Citations)
No citation records indexed.
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