Patent EP0153618A2 successfully refreshed from Google Patents.
EP0153618A2
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EP
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Method for preparing highly heat-conductive substrate and copper wiring sheet usable in the same
Assignee: Toshiba Corp
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Filing: 1985-02-05
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Granted: —
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Expires: 2005-02-05
Abstract
Abstract A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 µm comprising silver (Ag) and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper (Cu) optionally, between an aluminium nitride (AIN) substrate and a copper member; and joining said aluminium nitride (AIN) substrate and said copper (Cu) member with each other by heating. A copper wiring sheet comprising the above active layer is also usable in the method.
Inventors
- 👤 Masako Nakahashi
- 👤 Makoto Shirokane
- 👤 Tatsuo Yamazaki
- 👤 Hisashi Yoshino
- 👤 Akio Hori
- 👤 Hiromitsu Takeda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-04 16:36
CPC Classifications
C; C04; C04B; C04B35/00; C04B35/622; C04B35/64; C04B35/645; B; B23; B23K; B23K35/00; B23K35/22; B23K35/24; B23K35/26; B23K35/268; B32; B32B; B32B15/00; B32B15/01; B32B15/018; C04B37/00; C04B37/02; C04B37/023; C04B37/026; C22; C22C; C22C11/00; C22C11/06; C22C14/00; C22C5/00; C22C5/06; C22C9/00; H; H05; H05K; H05K1/00; H05K1/02; H05K1/03; H05K1/0306; H05K3/00; H05K3/38; H10; H10W; H10W40/00; H10W40/01; H10W40/03; H10W40/037; H10W40/20; H10W40/25; H10W40/255; H10W70/00; H10W70/01; H10W70/02; H10W70/60; H10W70/67; H10W70/68; H10W70/6875; H10W72/00; H10W72/30; H10W99/00; B32B15/02; B32B15/20; B32B2250/00; B32B2250/44; B32B2255/00; B32B2255/20; B32B2255/205; B32B2307/00; B32B2307/30; B32B2307/302; B32B2307/304; B32B2307/70; B32B2307/732; B32B2457/00; B32B2457/14; B32B3/00; B32B3/10; B32B9/00; B32B9/005; B32B9/04; B32B9/041; C04B2235/00; C04B2235/65; C04B2235/658; C04B2235/6581; C04B2237/00; C04B2237/02; C04B2237/12; C04B2237/122; C04B2237/125; C04B2237/126; C04B2237/127; C04B2237/30; C04B2237/32; C04B2237/36; C04B2237/366; C04B2237/40; C04B2237/407; C04B2237/50; C04B2237/62; C04B2237/70; C04B2237/708; C04B2237/72; C04B2237/76; C04B2237/86
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
67 words
A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 µm comprising silver and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper optionally, between an aluminium nitride substrate and a copper member; and joining said aluminium nitride substrate and said copper member with each other by heating.
Claim 2
Independent Claim
67 words
A method for preparing a highly heat conductive substrate which comprises interposing an active layer with a thickness of 0.5 to 10 µm comprising silver and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper optionally, between an aluminium nitride substrate and a copper member; and joining said aluminium nitride substrate and said copper member with each other by heating.
Claim 3
Dependent Claim
48 words
The method according to Claim 1, wherein said active layer comprises a silver layer with a thickness of 0.2 to 9 µm, a layer of said active metal with a thickness of 0.1 to 5 um and a copper layer with a thickness of 0 to 9 µm.
Claim 4
Dependent Claim
13 words
The method according to Claim 2, wherein said active metal layer comprises titanium.
Claim 5
Dependent Claim
51 words
The method according to Claim 1, wherein a Cu wiring sheet having said active layer provided on the surface of said copper member is joined to said aluminuim nitride substrate in such a manner so that the active layer on the copper member may be in contact with the AlN substrate.
Claim 6
Dependent Claim
48 words
The method according to Claim 4, wherein said active layer comprises a silver layer with a thickness of 0.2 to 9 µm, a layer of said active metal with a thickness of 0.1 to 5 µm and a copper layer with a thickness of 0 to 9 um.
Claim 7
Dependent Claim
13 words
The method according to Claim 5, wherein said active metal layer comprises titanium.
Claim 8
Dependent Claim
46 words
A Cu wiring sheet which comprises having an active layer with a thickness of 0.5 to 10 µm comprising silver and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper optionally provided on the surface of a copper sheet.
Claim 9
Dependent Claim
46 words
A Cu wiring sheet which comprises having an active layer with a thickness of 0.5 to 10 µm comprising silver and an active metal selected from the group consisting of titanium, zirconium and hafnium, and also copper optionally provided on the surface of a copper sheet.
Claim 10
Dependent Claim
48 words
The sheet according to Claim 7, wherein said active layer comprises a silver layer with a thickness of 0.2 to 9 um, a layer of said active metal with a thickness of 0.1 to 5 um and a copper layer with a thickness of 0 to 9 um.
Claim 11
Dependent Claim
13 words
The sheet according to Claim 8, wherein said active metal layer comprises titanium.
References Cited (Backward Citations)
No citation records indexed.
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