Patent EP0152116A2 successfully refreshed from Google Patents.
EP0152116A2
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Lateral bipolar transistor and method of producing the same
Assignee: Hitachi Ltd
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Filing: 1985-02-15
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Granted: —
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Expires: 2005-02-15
Abstract
Abstract 57 A lateral bipolar transistor affording a good controllability for a base length is disclosed.In fabricating a lateral bipolar transistor by forming a single crystal column (15) and disposing heavily doped polycrystalline regions (21E,21C) on both sides of the column (15). contact surfaces between the single crystal column (15) and the heavily doped polycrystalline regions (21E,21C) are controlled by etching of an oxide film (61). The etching of the oxide film (61) can provide a device of a precision higher than attained by controlling any other element.
Inventors
- 👤 Kazuo Nakazato
- 👤 Tohru Nakamura
- 👤 Masataka Kato
- 👤 Takahiro Okabe
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 16:39
CPC Classifications
H; H10; H10D; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0113; H10D10/00; H10D10/60; H10D62/00; H10D62/10; H10D62/17; H10D62/177; H10D62/184; H10P; H10P32/00; H10P32/10; H10P32/14; H10P32/1408; H10P32/1414; H10P32/17; H10P32/171
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
200 words
A lateral bipolar transistor comprising a semiconductor body (11) of a first conductivity type, a single crystal region (15) of a second conductivity type which is disposed on said body (11), a first polycrystalline region (21E) of the first conductivity type and a second polycrystalline region (21C) of the first conductivity type which are disposed around said single crystal region (15), a fist insulator film (61) which is interposed between the two polycrystalline regions (21E,21C) and said body (15), a second insulator film (10) which is disposed on at least a part of a surface where said first polycrystalline region (21E) of the first conductivity type and said single crystal region (15) lie in contact, and a third insulator film (10) which is disposed on at least a part of a surface where said second polycrystalline region (21C) of the first conductivity type and said single crystal region (15) lie in contact, said first and second polycrystalline regions (21E,21C) of the fist conductivity type being connected to corresponding ones of an emitter electrode (17E) and a collector electrode (17C), a principal part of said single crystal region (15) of the second conductivity type being constructed as a base region (16).
Claim 2
Dependent Claim
200 words
A lateral bipolar transistor comprising a semiconductor body (11) of a first conductivity type, a single crystal region (15) of a second conductivity type which is disposed on said body (11), a first polycrystalline region (21E) of the first conductivity type and a second polycrystalline region (21C) of the first conductivity type which are disposed around said single crystal region (15), a fist insulator film (61) which is interposed between the two polycrystalline regions (21E,21C) and said body (15), a second insulator film (10) which is disposed on at least a part of a surface where said first polycrystalline region (21E) of the first conductivity type and said single crystal region (15) lie in contact, and a third insulator film (10) which is disposed on at least a part of a surface where said second polycrystalline region (21C) of the first conductivity type and said single crystal region (15) lie in contact, said first and second polycrystalline regions (21E,21C) of the fist conductivity type being connected to corresponding ones of an emitter electrode (17E) and a collector electrode (17C), a principal part of said single crystal region (15) of the second conductivity type being constructed as a base region (16).
Claim 3
Dependent Claim
41 words
A lateral bipolar transistor according to claim 1, wherein said single crystal region (15) of the second conductivity type is formed by epitaxial growth, and said first and second polycrystalline regions (21E,21C) of the first conductivity type are formed by deposition.
Claim 4
Dependent Claim
29 words
A lateral bipolar transistor according to claim 2, wherein said first insulator film (61), said second insulator film (10) and said third insulator film (10) are thermal oxide films.
Claim 5
Dependent Claim
61 words
A lateral bipolar transistor according to claim 3, wherein said semiconductor body (11) of the first conductivity type is a single crystal silicon substrate, said single crystal region (15) of the second conductivity type is a single crystal silicon region formed by epitaxial growth, and said first and second polycrystalline regions (21E,21C) of the first conductivity type are polycrystalline silicon regions.
Claim 6
Dependent Claim
24 words
A lateral bipolar transistor according to claim 4, wherein the first conductivity type is the p-type, and the second conductivity type is the n-type.
Claim 7
Dependent Claim
34 words
A lateral bipolar transistor according to claim 5, wherein a base-emitter junction and a base-collector junction of said lateral bipolar transistor are arranged within said single crystal region (15) of the first conductivity type.
Claim 8
Dependent Claim
43 words
A lateral bipolar transistor according to claim 6, wherein said semiconductor body (11) of the first conductivity type has a heavily doped region (14) of the second conductivity type, which is connected with said single crystal region (15) of the second conductivity type.
Claim 9
Dependent Claim
25 words
A lateral bipolar transistor according to claim 1, wherein an electrode (17B) for said base region (16) overlies said base region (16) in contact therewith.
Claim 10
Dependent Claim
25 words
A lateral bipolar transistor according to claim 7, wherein an electrode (17B) for said base region (16) overlies said base region (16) in contact therewith.
Claim 11
Dependent Claim
193 words
In a semiconductor device having a semiconductor body (11) of a first conductivity type, a fist region (14) which has a second conductivity type opposite to the first conductivity type and which is disposed in a surface region of said body (11), an insulator (22) which is disposed on a surface of said body (11) and which has an opening on said first region (14), a second region (15) of a single crystal semiconductor which is disposed substantially directly over said opening, and a third region (21E,21C) of a polycrystalline semiconductor which is disposed on the insulator film (22) so as to lie in contact with a substantially vertical side wall of said second region (15); a lateral bipolar transistor characterized in that an insulator film (10.) is disposed on at least a part of an interface between said second region (15) and said third region (21E,21C), and said second region (15) includes therein fourth and fifth regions (12,13) of the first conductivity type which are disposed in contact with said third region (21E,21C), and a sixth region of the second conductivity type which is disposed in contact with said first region (14).
Claim 12
Dependent Claim
193 words
In a semiconductor device having a semiconductor body (11) of a first conductivity type, a fist region (14) which has a second conductivity type opposite to the first conductivity type and which is disposed in a surface region of said body (11), an insulator (22) which is disposed on a surface of said body (11) and which has an opening on said first region (14), a second region (15) of a single crystal semiconductor which is disposed substantially directly over said opening, and a third region (21E,21C) of a polycrystalline semiconductor which is disposed on the insulator film (22) so as to lie in contact with a substantially vertical side wall of said second region (15); a lateral bipolar transistor characterized in that an insulator film (10.) is disposed on at least a part of an interface between said second region (15) and said third region (21E,21C), and said second region (15) includes therein fourth and fifth regions (12,13) of the first conductivity type which are disposed in contact with said third region (21E,21C), and a sixth region of the second conductivity type which is disposed in contact with said first region (14).
Claim 13
Dependent Claim
37 words
A lateral bipolar transistor according to claim 10, wherein said second region (15) is a single crystal silicon region formed by epitaxial growth, and said third region (21E, 21C) is a polycrystalline silicon region formed by deposition.
Claim 14
Dependent Claim
17 words
A lateral bipolar transistor according to claim 10, wherein said insulator films (22,10) are thermal oxide films.
Claim 15
Dependent Claim
25 words
A lateral bipolar transistor according to claim 10, wherein an electrode (17G) for said second region (15) overlies said second region (15) in contact therewith.
Claim 16
Independent Claim
151 words
A method of producing a lateral bipolar transistor, comprising: a) the step of disposing a heavily doped region in a surface of a semiconductor body of a first conductivity type; b) the step of disposing a single crystal layer on said semiconductor body of the first conductivity type by epitaxial growth; c) the step of etching said single crystal layer to form a single crystal column; d) the step of oxidizing a part other than said single crystal column; e) the step of removing the oxide film so as to leave it on parts of said single crystal column for the purpose of defining a base length; f) the step of depositing polycrystalline silicon; g) the step of etching said polycrystalline silicon; h) the step of disposing an oxide film on a surface of the resultant structure; i) the step of providing contact holes; and j) the step of disposing electrodes.
Claim 17
Independent Claim
151 words
A method of producing a lateral bipolar transistor, comprising: a) the step of disposing a heavily doped region in a surface of a semiconductor body of a first conductivity type; b) the step of disposing a single crystal layer on said semiconductor body of the first conductivity type by epitaxial growth; c) the step of etching said single crystal layer to form a single crystal column; d) the step of oxidizing a part other than said single crystal column; e) the step of removing the oxide film so as to leave it on parts of said single crystal column for the purpose of defining a base length; f) the step of depositing polycrystalline silicon; g) the step of etching said polycrystalline silicon; h) the step of disposing an oxide film on a surface of the resultant structure; i) the step of providing contact holes; and j) the step of disposing electrodes.
References Cited (Backward Citations)
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