Patent EP0151948A2 successfully refreshed from Google Patents.
EP0151948A2
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Control of etch rate ratio of sio2/photoresist for quartz planarization etch back process
Assignee: International Business Machines Corp
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Filing: 1985-01-17
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Granted: —
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Expires: 2005-01-17
Abstract
Abstract A method of controlling the etch rate ratio of SiO 2 photoresist (PR) in a quartz planarization etch back process involves etching with a gaseous mixture containing CF 4 and either CHF 3 or C x F y with x > 1 or O 2 . The preferred SiO 2 /PR ratio of 1.2 = 0.1 is obtained by either adding CHF 3 to decrease the etch rate of the PR or by adding O 2 to increase the etch rate of the PR.
Inventors
- 👤 Lee Chen
- 👤 Gangadhara Swami Mathad
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-31 09:39
CPC Classifications
H; H10; H10P; H10P95/00; H10P95/06; H10P95/062; H10P95/064; H10P50/00; H10P50/20; H10P50/28; H10P50/282; H10P50/283; H10P50/286; H10P50/287
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
69 words
Method for uniformly etching a surface which includes both silicon dioxide and an organic polymer material comprising the steps of contacting said surface with a reactive etching plasma which contains CF 4 and a gas taken from the group consisting of CHF 3 , C x F v with x > 1 , and 0 2 to cause the structure formed by said etching step to be substantially planar.
Claim 2
Dependent Claim
69 words
Method for uniformly etching a surface which includes both silicon dioxide and an organic polymer material comprising the steps of contacting said surface with a reactive etching plasma which contains CF 4 and a gas taken from the group consisting of CHF 3 , C x F v with x > 1 , and 0 2 to cause the structure formed by said etching step to be substantially planar.
Claim 3
Dependent Claim
14 words
Method as described in claim 1 whereby said etching plasma contains CHF 3 .
Claim 4
Dependent Claim
18 words
Method as described in claim 2 whereby the gaseous mixture contains 0.5 to 5.0 % CHF 3 .
Claim 5
Dependent Claim
28 words
Method as described in claim 2 whereby the con- centration of CHF 3 in the mixture is sufficient to provide an etch rate ratio of 1.2 + .1.
Claim 6
Dependent Claim
13 words
Method as described in claim 1 wherebv said reactive etching plasma contains oxygen.
Claim 7
Dependent Claim
20 words
Method as described in claim 5 whereby the reactive etching plasma contains 0.5 to 10 volume % O 2 .
Claim 8
Dependent Claim
24 words
Method as described in claim 5 whereby said reactive etching plasma contains sufficient oxygen to provide an etch rate ratio of 1.2 ± .1.
Claim 9
Dependent Claim
22 words
Method as described in claim 1 including the step of evacuating said structure to a pressure of not less than 0.67 mbar.
References Cited (Backward Citations)
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