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EP0148510A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

High conductance circuit for progammable integrated circuit

Assignee: Advanced Micro Devices Inc
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Filing: 1984-06-08
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Granted: —
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Expires: 2004-06-08
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Abstract

Abstract A unique programming means, suitable for use with programmable read-only memories (PROM), or other circuits utilizing programmable fuses, is provided which overcomes several distinct disadvantages of prior art programming means. The program means of this invention includes a Darlington pair of prgramming transistors which allows only a single programming transistor to be made large in order to carry the large programming current, and only a single high current drive signal need be applied to the single programming transistor, thereby minimizing power consumption and integrated circuit die area.

Inventors

  • 👤 Robert J. Bosnyak
  • 👤 H.T. Chua
  • 👤 Donald Goddard
  • 👤 Sing Wong

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-27 13:10
CPC Classifications
G; G11; G11C; G11C17/00; G11C17/14; G11C17/18

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 107 words
Programming means for selectively causing a programming current to flow through a fusing device having a first terminal connected to a first reference voltage, comprising a first terminal connected to one side of said fusing device, a first transistor having a collector, an emitter and a base, said programming means characterized by comprising: a second transistor having a collector connected to said first terminal, a base connected to the emitter of said first transistor, and an emitter connected to a second reference voltage, wherein said base of said first transistor receives a signal defining whether said fusing device is to be opened or is to remain intact.
Claim 2
Dependent Claim 107 words
Programming means for selectively causing a programming current to flow through a fusing device having a first terminal connected to a first reference voltage, comprising a first terminal connected to one side of said fusing device, a first transistor having a collector, an emitter and a base, said programming means characterized by comprising: a second transistor having a collector connected to said first terminal, a base connected to the emitter of said first transistor, and an emitter connected to a second reference voltage, wherein said base of said first transistor receives a signal defining whether said fusing device is to be opened or is to remain intact.
Claim 3
Dependent Claim 88 words
A structure as in Claim 1 which is further characterized by including a first terminal for receiving an enabling signal which causes said programming means to be enabled during programming and causes said programming means to be disabled at other times; a second terminal for receiving a signal defining when, during programming, said fusing element is to be opened or is to remain intact; a voltage divider means connected between said second and said third terminals and having a tap connected to the base of said first transistor.
Claim 4
Dependent Claim 59 words
A structure as in Claim 2 further characterized in that said voltage divider means comprises a resistor having one end connected to said second terminal and a second end connected to the base of said first transistor and a diode having one terminal connected to the base of said first transistor and one terminal connected to said third terminal.
Claim 5
Dependent Claim 52 words
The structure as in Claim 3 further characterized in that said first voltage potential is more positive than said second reference potential, and said first and said second transistors are NPN transistors, and said first terminal of said diode is an annode and said second terminal of said diode is a cathode.
Claim 6
Dependent Claim 15 words
Structure as in Claim 4 further characterized in that said diode is a Schottky diode.

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