Patent EP0148504B1 successfully refreshed from Google Patents.
EP0148504B1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method and apparatus for sputtering
Assignee: Hitachi Ltd
•
Filing: 1984-12-27
•
Granted: 1990-11-22
•
Expires: 2004-12-27
Abstract
No abstract record available.
Inventors
- 👤 Hiroshi Saito
- 👤 Hideki Tateishi
- 👤 Shigeru Kobayashi
- 👤 Susumu Aiuchi
- 👤 Yasumichi Suzuki
- 👤 Masao Sakata
- 👤 Hideaki Shimamura
- 👤 Tsuneaki Kamei
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 20:08
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/32; H01J37/32009; H01J37/32192; C; C23; C23C; C23C14/00; C23C14/22; C23C14/34; C23C14/46; H01J37/32431; H01J37/3266; H01J37/34
Claims Analysis
Total Claims: 30
Claim 1
Independent Claim
214 words
A method for sputtering including the steps of disposing an electrode structure (33; 47, 52) carrying a planar target (21; 45) opposite to a substrate (31), causing sputtering of target material from said target by the action of a plasma for the deposition of a thin film on the surface of said substrate and accelerating ions in said plasma toward and onto the surface of said target by the action of an electric field established by said electrode structure to cause impingement of ions against the surface of said target thereby causing said sputtering of said target material from said target for the deposition of said thin film on the surface of said substrate, characterised in that said method further comprises the steps of introducing microwaves into said planar target (21; 45) placed under a predetermined pressure condition in a processing chamber (29), a surface of said planar target being opposed to the surface of said substrate (31) on which said thin film is to be sputtered and said microwaves being introduced from a direction along said surface of said target and maintaining said plasma at a high density in an area above said surface of said target (21; 45) using the microwaves and magnetic fields defined through magnet means (41, 42; 58, 59).
Claim 2
Independent Claim
214 words
A method for sputtering including the steps of disposing an electrode structure (33; 47, 52) carrying a planar target (21; 45) opposite to a substrate (31), causing sputtering of target material from said target by the action of a plasma for the deposition of a thin film on the surface of said substrate and accelerating ions in said plasma toward and onto the surface of said target by the action of an electric field established by said electrode structure to cause impingement of ions against the surface of said target thereby causing said sputtering of said target material from said target for the deposition of said thin film on the surface of said substrate, characterised in that said method further comprises the steps of introducing microwaves into said planar target (21; 45) placed under a predetermined pressure condition in a processing chamber (29), a surface of said planar target being opposed to the surface of said substrate (31) on which said thin film is to be sputtered and said microwaves being introduced from a direction along said surface of said target and maintaining said plasma at a high density in an area above said surface of said target (21; 45) using the microwaves and magnetic fields defined through magnet means (41, 42; 58, 59).
Claim 3
Dependent Claim
72 words
A method according to claim 1, characterised in that said step of maintaining said plasma in said area above said surface of said target (21; 45) includes disposing a pair of magnets (41, 42; 58, 59) outside of said electrode structure (33) so as to produce a mirror magnetic field and directing microwaves toward and into the space defined by said mirror magnetic field, thereby generating said high-density plasma in said space.
Claim 4
Dependent Claim
34 words
A method according to claim 2, characterised in that said mirror magnetic field has magnetic lines of force of a configuration covering said target (21) for trapping electrons in an area near said target.
Claim 5
Dependent Claim
37 words
A method according to claim 2 or 3, characterised in that the magnetic lines of force of said mirror magnetic field do not substantially form a closed loop inside said electrode structure (33) carrying said target (21).
Claim 6
Dependent Claim
68 words
A method according to claim 2, characterised in that said space is defined in a plasma generating chamber (37) disposed adjacent to said processing chamber (29) containing said electrode structure (33) and said substrate (31) therein and that said step of maintaining said plasma includes guiding said plasma to migrate from said plasma generating chamber (37) toward the area above said target (21) in said processing chamber (29).
Claim 7
Dependent Claim
52 words
A method according to claim 5, characterised in that said plasma generating chamber (37) includes an opening (34) open toward a point above said target (21) and communicates with a microwave source (35) through a microwave- permeable window (39) disposed between said pair of magnets (41, 42) generating said mirror magnetic field.
Claim 8
Dependent Claim
52 words
A method according to claim 6, characterised in that said mirror magnetic field has a strength greater than the value required for satisfying the condition of electron cyclotron resonance with the microwaves used, said strength being larger on the side of said window (39) than on the side of said opening (34).
Claim 9
Dependent Claim
43 words
A method according to claim 7, characterised in that it further comprises the step of generating a magnetic field along the surface of said target (45) for accelerating migrating electrons toward said target and trapping said electrons in an area near said target.
Claim 10
Dependent Claim
27 words
A method according to claim 7 or 8, characterised in that the axis of said plasma generating chamber (37) extends horizontally and runs above said target (21).
Claim 11
Dependent Claim
54 words
A method according to claim 2, characterised in that said space is defined in the vicinity of the surface of said target (21) and that said pair of magnets (58, 59) for generating said mirror magnetic field are disposed around said processing chamber (29) containing said electrode structure (33) and said substrate (31) therein.
Claim 12
Independent Claim
234 words
A method for sputtering including the steps of disposing an electrode structure (33) carrying a target (21) opposite to a substrate (31) and causing sputtering of target material from said target by the action of a plasma for the deposition of a thin film on the surface of said substrate, characterised in that said method further comprises the steps of introducing a gas for forming said plasma into a first space (29) containing said electrode structure (33) and said substrate (31), generating a mirror magnetic field in a second space (37) disposed outside of and adjoining to said first space (29) and having its central axis extending toward an area above said target (21), directing microwaves toward the area above said target (21) from a direction parallel to the surface of the target in a relation substantially coaxial with said mirror magnetic field thereby generating a high-density plasma in said second space (37), causing migration of said high-density plasma toward the area above said target (21) in said first space (29) and applying a voltage across said electrode structure (33) to establish an electric field substantially perpendicular to the surface of said target (21) to bring ions in the migrated plasma into impingement against the surface of said target (21), thereby causing sputtering of target material from said target (21) for the deposition of said thin film on the surface of said substrate (31).
Claim 13
Independent Claim
234 words
A method for sputtering including the steps of disposing an electrode structure (33) carrying a target (21) opposite to a substrate (31) and causing sputtering of target material from said target by the action of a plasma for the deposition of a thin film on the surface of said substrate, characterised in that said method further comprises the steps of introducing a gas for forming said plasma into a first space (29) containing said electrode structure (33) and said substrate (31), generating a mirror magnetic field in a second space (37) disposed outside of and adjoining to said first space (29) and having its central axis extending toward an area above said target (21), directing microwaves toward the area above said target (21) from a direction parallel to the surface of the target in a relation substantially coaxial with said mirror magnetic field thereby generating a high-density plasma in said second space (37), causing migration of said high-density plasma toward the area above said target (21) in said first space (29) and applying a voltage across said electrode structure (33) to establish an electric field substantially perpendicular to the surface of said target (21) to bring ions in the migrated plasma into impingement against the surface of said target (21), thereby causing sputtering of target material from said target (21) for the deposition of said thin film on the surface of said substrate (31).
Claim 14
Dependent Claim
42 words
A method according to claim 11, characterised in that it further comprises the step of generating a magnetic field above said target (21) in a relation substantially parallel to the surface of said target (21) and imparting rotary motion to the electrons.
Claim 15
Dependent Claim
163 words
A sputtering apparatus including an electrode structure (33; 47, 52) carrying a planar target (21; 45) thereon, a substrate supporting structure (32) supporting a substrate (31) opposite to said target (21) and means for generating a high-density plasma for causing sputtering of target material from said target (21) for the deposition of a thin film on the surface of said substrate (31), characterised in that said apparatus further comprises a pair of magnets (41, 42; 58, 59) disposed at a place apart from said electrode structure (33; 47, 52) for establishing a mirror magnetic field defining a high-density plasma generating space and a microwave source (35) directing microwaves toward and into said high-density plasma generating space in a direction parallel to the surface of said target (21) and along the surface of said target (21 ), said mirror magnetic field and said microwave source (35) acting in combination to provide the high-density plasma above the target (21) over a wide surface area thereof.
Claim 16
Dependent Claim
163 words
A sputtering apparatus including an electrode structure (33; 47, 52) carrying a planar target (21; 45) thereon, a substrate supporting structure (32) supporting a substrate (31) opposite to said target (21) and means for generating a high-density plasma for causing sputtering of target material from said target (21) for the deposition of a thin film on the surface of said substrate (31), characterised in that said apparatus further comprises a pair of magnets (41, 42; 58, 59) disposed at a place apart from said electrode structure (33; 47, 52) for establishing a mirror magnetic field defining a high-density plasma generating space and a microwave source (35) directing microwaves toward and into said high-density plasma generating space in a direction parallel to the surface of said target (21) and along the surface of said target (21 ), said mirror magnetic field and said microwave source (35) acting in combination to provide the high-density plasma above the target (21) over a wide surface area thereof.
Claim 17
Dependent Claim
60 words
A sputtering apparatus according to claim 13, characterised in that said high-density plasma generating space is defined in an area near the surface of said target (21) and that said pair of magnets 41, 42; 58, 59) are spaced apart in the direction of the normal to the center of said target (21) in a relation coaxial to said normal.
Claim 18
Dependent Claim
32 words
A sputtering apparatus according to claim 13, characterised in that said mirror magnetic field has a strength greater than that required for satisfying the condition of electron cyclotron resonance of said microwaves.
Claim 19
Dependent Claim
59 words
A sputtering apparatus according to claim 13, characterised in that said high-density plasma generating space is defined at a place remote from said electrode structure (33) and that said pair of magnets (41, 42) and said microwave source (35) are disposed around said high-density plasma generating space so that said mirror magnetic field is substantially coaxial with the microwaves.
Claim 20
Dependent Claim
34 words
A sputtering apparatus according to claim 14, characterised in that said microwave source (35) is disposed so as to direct the microwaves toward a position above said target (21) and along the surface thereof.
Claim 21
Dependent Claim
30 words
A sputtering apparatus according to claim 16, characterised in that said high-density plasma generating space is defined in a waveguide (37) having an opening (34) open toward said target (21).
Claim 22
Dependent Claim
64 words
A sputtering apparatus according to 18, characterised in that said pair of magnets (41, 42) are disposed along the longitudinal direction of said waveguide (37) in coaxial relation thereto and that the magnet (42) which is remoter from said target (21) generates a magnetic field which has a greater strength than that generated by the magnet (41) which is closer to said target (21).
Claim 23
Dependent Claim
64 words
A sputtering apparatus according to 18, characterised in that said pair of magnets (41, 42) are disposed along the longitudinal direction of said waveguide (37) in coaxial relation thereto and that the magnet (42) which is remoter from said target (21) generates a magnetic field which has a greater strength than that generated by the magnet (41) which is closer to said target (21).
Claim 24
Dependent Claim
52 words
A sputtering apparatus according to claim 19, characterised in that said target (21) is disposed in horizontal relation and that said waveguide (37) also disposed in horizontal relation has its upper end lower than the surface of said substrate (31) and its central axis higher than the surface of said target (21).
Claim 25
Dependent Claim
28 words
A sputtering apparatus according to claim 19 or 20, characterised in that said waveguide (37) has its central axis extending substantially toward an area above said target (21).
Claim 26
Dependent Claim
74 words
A sputtering apparatus according to claim 20, characterised in that said electrode structure includes a cathode (47) disposed beneath said target (21) and a pair of magnets (50, 51) disposed on the opposite two sides of said target (21), said pair of magnets generating a magnetic field which is substantially parallel to the surface of said target (21) and is directed so that electrons migrating through said waveguide (37) are given a rotary motion.
Claim 27
Dependent Claim
125 words
A sputtering apparatus assisted with microwave power source, comprising a cathode and a substrate holder, said cathode adapted to hold a planar target composed of a material that is to be sputtered, the substrate holder adapted to hold a substrate in a manner to be opposed to said target and a plasma introducing window, a microwave power source said microwave power source being adapted to provide microwaves in a direction parallel to the surface of said planar target, and magnet means remote from said cathode for generating a plasma in combination with said microwave power source for sputtering said target, said magnet means being adapted to generate a magnetic field which transfers sideways said plasma into a space between said target and said substrate holder.
Claim 28
Dependent Claim
125 words
A sputtering apparatus assisted with microwave power source, comprising a cathode and a substrate holder, said cathode adapted to hold a planar target composed of a material that is to be sputtered, the substrate holder adapted to hold a substrate in a manner to be opposed to said target and a plasma introducing window, a microwave power source said microwave power source being adapted to provide microwaves in a direction parallel to the surface of said planar target, and magnet means remote from said cathode for generating a plasma in combination with said microwave power source for sputtering said target, said magnet means being adapted to generate a magnetic field which transfers sideways said plasma into a space between said target and said substrate holder.
Claim 29
Dependent Claim
129 words
A sputtering apparatus assisted with microwave power source comprising a cathode and a substrate holder, said cathode being adapted to hold a planar target composed of a material that is to be sputtered, the substrate holder being adapted to hold a substrate in a manner to be opposed to said target a microwave introducing window through which microwave power is introduced from a direction parallel to the surface of the target into space between said target and said substrate holder and magnet means positioned outside and surrounding a chamber having said cathode and said substrate holder enclosed therein, which magnet means generates a magnetic field, which magnet means, in combination with said microwave power source, generates said plasma, and which magnet means confines the plasma adjacent said target surface.
Claim 30
Dependent Claim
129 words
A sputtering apparatus assisted with microwave power source comprising a cathode and a substrate holder, said cathode being adapted to hold a planar target composed of a material that is to be sputtered, the substrate holder being adapted to hold a substrate in a manner to be opposed to said target a microwave introducing window through which microwave power is introduced from a direction parallel to the surface of the target into space between said target and said substrate holder and magnet means positioned outside and surrounding a chamber having said cathode and said substrate holder enclosed therein, which magnet means generates a magnetic field, which magnet means, in combination with said microwave power source, generates said plasma, and which magnet means confines the plasma adjacent said target surface.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.