Patent EP0147127A2 successfully refreshed from Google Patents.
EP0147127A2
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A composition of matter of use as a resist in lithography
Assignee: International Business Machines Corp
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Filing: 1984-12-11
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Granted: —
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Expires: 2004-12-11
Abstract
Abstract A composition of matter is obtained by interreacting a quinone diazo compound and an organosilicon compound. Such a composition can be used as a resist in a lithographic process.
Inventors
- 👤 Edward Darko Babich
- 👤 Michael Hatzakis
- 👤 Jurij Rostyslav Paraszcak
- 👤 Jane Margaret Shaw
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 23:04
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/075; G03F7/0757; G03F7/022; G03F7/023; G03F7/0754
Claims Analysis
Total Claims: 21
Claim 1
Independent Claim
25 words
A composition of matter formed by the interreaction of a quinone diazo compound, and an organosilicon compound containing groups reactive with the quinone diazo compound.
Claim 2
Dependent Claim
25 words
A composition of matter formed by the interreaction of a quinone diazo compound, and an organosilicon compound containing groups reactive with the quinone diazo compound.
Claim 3
Dependent Claim
18 words
A composition as claimed in claim 1, wherein the diazo compound contains reactive acid or reactive halo groups.
Claim 4
Dependent Claim
23 words
A composition as claimed in claim 1, wherein the diazo compound contains a reactive halogen group, acid group, or a sulfonyl halide group.
Claim 5
Dependent Claim
15 words
A composition as claimed in any preceding claim, wherein the diazo compound is a quinone-(1,2)-diazide.
Claim 6
Dependent Claim
28 words
A composition as claimed in any of claims 1 to 3, wherein the diazo compound is from a benzoquinone diazide or a naphthoquinone diazide, or a mixture thereof.
Claim 7
Dependent Claim
17 words
A composition as claimed in any of claims 1 to 3, wherein the diazo compound is naphthoquinone-l,2-diazide-5-sulfochloride.
Claim 8
Dependent Claim
27 words
A composition as claimed in any preceding claim, wherein the organosilicon compound contains a reactive hydrogen group, or a reactive alkali metal group, or an epoxy group.
Claim 9
Dependent Claim
28 words
A composition as claimed in claim 7, wherein the organosilicon compound contains a reactive hydrogen group in the form of a hydroxy group, amino group, or mercapto group.
Claim 10
Dependent Claim
25 words
A composition as claimed in any of claims 1 to 6, wherein the organosilicon compound is a polysiloxane, siloxane, silazane, silanol, silane, or silyl compound.
Claim 11
Dependent Claim
27 words
A composition as claimed in any preceding claim, wherein the organosilicon compound contains at least 0.01% by weight of a group reactive with said quinone diazo compound.
Claim 12
Dependent Claim
27 words
A composition as claimed in any preceding claim, wherein the organosilicon compound contains up to about 2% by weight of groups reactive with said quinone diazo compound.
Claim 13
Dependent Claim
22 words
A negative resist material comprising a composition as claimed in claim 7, wherein the organosilicon-compound contains an amine functionality or epoxide functionality.
Claim 14
Dependent Claim
21 words
A positive resist material comprising a composition as claimed in claim 7, wherein the organosilicon compound contains hydroxyl or phenolic functionality.
Claim 15
Dependent Claim
17 words
A process for curing a composition as claimed in any preceding claim comprising subjecting it to radiation.
Claim 16
Dependent Claim
19 words
A process as claimed in 14 wherein the radiation has a wavelength of about 200 to about 450 nm.
Claim 17
Dependent Claim
44 words
A lithographic process comprising forming a layer of a composition as claimed in any of claims 1 to 11 on a substrate, exposing the layer to radiation in a desired pattern, and developing the layer, thereby leaving the desired pattern remaining on the substrate.
Claim 18
Dependent Claim
40 words
A process for preparing a composition as claimed in any of claims 1 to 11, comprising reacting a quinone diazo compound and an organosilicon compound containing groups reactive with the quinone diazo compound in the presence of an acid acceptor.
Claim 19
Dependent Claim
23 words
A process as claimed in claim 17, wherein the acid acceptor is an alkali metal carbonate, or pyridine, of a tertiary organic amine.
Claim 20
Dependent Claim
25 words
A process as claimed claim 17 or 18, wherein the reaction is carried out in the temperature range of normal room temperature to about 60°C.
Claim 21
Dependent Claim
24 words
A process as claimed in any of claims 17 to 19, wherein about equal molar amounts of organosilicon to quinone diazo compound are reacted.
References Cited (Backward Citations)
No citation records indexed.
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