Patent EP0146197A2 successfully refreshed from Google Patents.
EP0146197A2
Expired / Lapsed
EP
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Removal of semiconductor wafers from dicing film
Assignee: Ingredion Inc
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Filing: 1984-12-18
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Granted: —
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Expires: 2004-12-18
Abstract
Abstract Semiconductor chips, which have been diced, can be removed from the conductive adhesive/polymer support film holding them, without leaving residual adhesive on the film if the wafer/adhesive/support film laminate is heated prior to the dicing step. The heating step increases the release characteristics between the adhesive and film.
Inventors
- 👤 Joseph Anthony Aurichio
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 19:45
CPC Classifications
H; H10; H10P; H10P72/00; H10P72/04; H10P72/0442; B; B28; B28D; B28D5/00; B28D5/0058; B28D5/0082; H10P50/00; H10P72/50; H10P72/70; H10P72/74; H10P72/7402; H10P72/7404; H10W; H10W46/00; H10P72/7416; Y; Y10; Y10S; Y10S156/00; Y10S156/918; Y10S156/93; Y10T; Y10T156/00; Y10T156/10; Y10T156/1052; Y10T156/1062; Y10T156/1075; Y10T156/11; Y10T156/19
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
104 words
A process for forming individual chips from a semiconductor wafer by dicing said wafers into the individual chips which.comprises: (a) attaching the wafer to a conductive adhesive which is bonded to a plastic support film which is substantially free of a release layer on the side to which the adhesive is bonded; (b) heating the resulting article to improve the release characteristics between the conductive adhesive and the support film prior to the dicing of the wafer; and (c) removing the chip with adhesive substantially bonded thereto and with substantially no adhesive remaining on the support film after the dicing step has been completed.
Claim 2
Dependent Claim
104 words
A process for forming individual chips from a semiconductor wafer by dicing said wafers into the individual chips which.comprises: (a) attaching the wafer to a conductive adhesive which is bonded to a plastic support film which is substantially free of a release layer on the side to which the adhesive is bonded; (b) heating the resulting article to improve the release characteristics between the conductive adhesive and the support film prior to the dicing of the wafer; and (c) removing the chip with adhesive substantially bonded thereto and with substantially no adhesive remaining on the support film after the dicing step has been completed.
Claim 3
Dependent Claim
18 words
A process as claimed in Claim 1 in which the support film is formed of a polyolefin polymer.
Claim 4
Dependent Claim
13 words
A process as claimed in Claim 1 wherein the support film is polypropylene.
Claim 5
Dependent Claim
23 words
A process as claimed in Claim 1 wherein the support film has a thickness of from about 25 microns to about 150 microns.
Claim 6
Dependent Claim
19 words
A process as claimed in Claim 1 wherein the film is polyolefin of about 25 - 150 micron thickness.
Claim 7
Dependent Claim
19 words
A process as claimed in Claim 1 wherein the film is polypropylene of about 25 - 150 micron thickness.
Claim 8
Dependent Claim
22 words
A process as claimed in Claim 1 wherein the conductive adhesive has a thickness of from about 6 to about 40 microns.
Claim 9
Dependent Claim
25 words
A process as claimed in Claim 1 wherein the conductive adhesive contains an effective amount for conductivity of a conductive metal in an adhesive matrix.
Claim 10
Dependent Claim
30 words
A process as claimed in Claim 2 wherein the support film has a thickness of about 25 -150 microns and the adhesive has a thickness of about 6 -40 microns.
Claim 11
Dependent Claim
41 words
A process as claimed in Claim 3 having a conductive adhesive of a thickness of from about 6 microns to about 40 microns and wherein the adhesive contains an effective amount for conductivity of a conductive metal in an adhesive matrix.
Claim 12
Dependent Claim
28 words
A process as claimed in Claim 1 wherein the heating in step (b) is from about 45°C. to about 70°C. for about 0.25 minutes to about 3 minutes.
Claim 13
Dependent Claim
28 words
A process as claimed in Claim 2 wherein the heating in step (b) is from about 45°C. to about 70°C. for about 0.25 minutes to about 3 minutes.
Claim 14
Dependent Claim
28 words
A process as claimed in Claim 3 wherein the heating in step (b) is from about 45°C. to about 70°C. for about 0.25 minutes to about 3 minutes.
References Cited (Backward Citations)
No citation records indexed.
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