Patent US3079880A successfully refreshed from Google Patents.
Patent EP0145926A2 successfully refreshed from Google Patents.
EP0145926A2
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EP
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Polysilicon resistors compensated with double ion-implantation
Assignee: International Business Machines Corp
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Filing: 1984-11-06
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Granted: —
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Expires: 2004-11-06
Abstract
Abstract @ A compensated polysilicon resistor wherein both N-type and P-type dopants are ion implanted into the polysilicon, whereby the net doping concentration is the difference between the concentration of the P-type and N-type dopants. The N-type dopants provide for compensation at the grain boundaries. As a result of this background doping or compensation the sensitivity of the sheet resistance of the polysilicon upon net doping concentration is greatly reduced.
Inventors
- 👤 Min Sung Choi
- 👤 Desmond A. Fitzpatrick
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 17:08
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; H10P; H10P32/00; H10P32/30; H10P32/302
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
107 words
A compensated polysilicon resistor, comprising an insulating base (42) and a layer (44) of polysilicon overlaying said insulating layer, said polysilicon layer having a predetermined width, and a predetermined length between two contact areas, said polysilicon layer comprising: a P-type dopant of a predetermined acceptor concentration included in said polysilicon layer substantially uniform over said length; and an N-type dopant of a predetermined donor concentration included in said polysilicon layer substantially uniform over said length, with the net dopant concentration being the difference between said first and second concentrations, whereby the sensitivity of the sheet resistance of the polysilicon upon the net doping concentration is greatly reduced.
Claim 2
Dependent Claim
107 words
A compensated polysilicon resistor, comprising an insulating base (42) and a layer (44) of polysilicon overlaying said insulating layer, said polysilicon layer having a predetermined width, and a predetermined length between two contact areas, said polysilicon layer comprising: a P-type dopant of a predetermined acceptor concentration included in said polysilicon layer substantially uniform over said length; and an N-type dopant of a predetermined donor concentration included in said polysilicon layer substantially uniform over said length, with the net dopant concentration being the difference between said first and second concentrations, whereby the sensitivity of the sheet resistance of the polysilicon upon the net doping concentration is greatly reduced.
Claim 3
Dependent Claim
21 words
The polysilicon resistor as recited in claim 1, further comprising a layer (46) of silicon oxide overlaying said polysilicon layer (44).
Claim 4
Dependent Claim
51 words
The polysilicon resistor as recited in claims 1 or 2, further comprising a contact dopant of the type of the P-type or N-type dopant having the higher concentration, said contact dopant being included in a portion (50, 52) of said polysilicon layer (44) near the surface of said two contact areas.
Claim 5
Dependent Claim
23 words
The polysilicon resistor as recited in one of the preceding claims, wherein said P-type dopant is boron and said N-type dopant is phosphorous.
Claim 6
Dependent Claim
22 words
The polysilicon resistor as recited in claim 4, wherein said acceptor concentration of boron is greater than said donor concentration of phosphorous.
Claim 7
Dependent Claim
106 words
The polysilicon resistor as recited in at least one of the preceding claims being characterized by a method for manufacture comprising: forming a polysilicon layer (44) onto a desired substrate (e.g. 40, 42); forming a layer of silicon dioxide (46) upon the exposed major surface of said polysilicon layer; ion implanting P ions (e.g. boron) and N ions (e.g. phosphorous) through said layer of silicon dioxide (46) and into said polysilicon layer; annealing the structure to form said P type polysilicon resistor which is compensated with N ions and the grain boundaries of said polysilicon resistor; and making electrical contacts (58, 60) to said polysilicon resistor.
References Cited (Backward Citations)
No citation records indexed.
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