Thin-film electroluminescent element
Abstract
Abstract @ The development of a dielectric thin-film which is high (140 MV/cm or above) in product of dielectric constant ε i and dielectric breakdown field strength E ib is essential for realizing an EL element which can operate stably at a low voltage. Such dielectric film is also required which can withstand heat treatments at high temperatures above 500°C and is proof against clouding and in which the electrical breakdown caused by a minute fault produced in the process of film formation is self-healed. A film material which satisfies all of these requirements could be obtained from a Ti0 2 -BaO based composition by partially substituting the position of Ti with Sn, Zr or Hf and also partially substituting the position of Ba with Ca or Mg. By using these dielectric films, it is possible to obtain a low-voltage drive thin-film electroluminescent element which are high in production yield and reliability.
Inventors
- 👤 Jun Kuwata
- 👤 Yosuke Fujita
- 👤 Tsuneharu Nitta
- 👤 Tomizo Matsuoka
- 👤 Atsushi Abe
Bibliographic Details
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