Patent EP0777197A2 successfully refreshed from Google Patents.
Patent EP0145203A2 successfully refreshed from Google Patents.
EP0145203A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor laser
Assignee: Sharp Corp
•
Filing: 1984-10-25
•
Granted: —
•
Expires: 2004-10-25
Abstract
Abstract A V-channeled substrate inner stripe (VSIS) semiconductor laser includes a p-Ga 1-y Al y As active layer sandwiched between a p-G l-x AI x As first cladding layer and an n-Ga 1 - x Al x As second cladding layer. The AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52 in order to minimize the mode competition noise at an operating temperature. In a preferred form, the cavity length is longer than 300 µm so as to minimize the occurence of the mode competition noise at the operating temperature. Furthermore, the reflectivity R, of the front facet and the reflectivity R 2 of the rear facet are selected to satisfy the condition: 0.1≤ln(I/R 1 .R 2 )≤1.
Inventors
- 👤 Sadayoshi Matsui
- 👤 Shinji Kaneiwa
- 👤 Haruhisa Takiguchi
- 👤 Mototaka Taneya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 15:05
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/20; H01S5/24; H01S5/02; H01S5/028; H01S5/10; H01S5/1039
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
57 words
An index guided semiconductor laser having the inner stripe structure comprising: a first and a second cladding layers; and an active layer sandwiched by said first and second cladding layers, wherein said first and second cladding layers have the mole fraction of a predetermined value which minimizes the occurence of mode competition noise at an operating temperature.
Claim 2
Dependent Claim
57 words
An index guided semiconductor laser having the inner stripe structure comprising: a first and a second cladding layers; and an active layer sandwiched by said first and second cladding layers, wherein said first and second cladding layers have the mole fraction of a predetermined value which minimizes the occurence of mode competition noise at an operating temperature.
Claim 3
Dependent Claim
27 words
The index guided semiconductor laser of claim 1, said semiconductor laser having the cavity length which minimizes the occurence of mode competition noise at an operating temperature.
Claim 4
Dependent Claim
36 words
The index guided semiconductor laser cf claim 1 or 2, said semiconductor laser having a front facet and a rear facet of which the reflectivities R 1 and R 2 , respectively, satisfy the following condition.
Claim 5
Dependent Claim
130 words
A V-channeled substrate inner stripe (VSIS) semiconductor laser comprising: a p-GaAs substrate; an n-GaAs current blockng layer formed on said p-GaAs substrate; a V-shaped groove formed in said n-GaAs current blocking layer in a manner to reach said p-GaAs substrate; a p-Ga 1-x Al x As first cladding layer formed on said n-GaAs current blocking layer; a p-Ga 1-y Al y As active layer formed on said p-Ga 1-x Al x As first cladding layer; an n-Ga 1-x Al x As second cladding layer formed on said p-Ga 1-y Al y As active layer; and an n-GaAs cap layer formed on said n-Ga 1-x Al x As second cladding layer, wherein said AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52.
Claim 6
Dependent Claim
130 words
A V-channeled substrate inner stripe (VSIS) semiconductor laser comprising: a p-GaAs substrate; an n-GaAs current blockng layer formed on said p-GaAs substrate; a V-shaped groove formed in said n-GaAs current blocking layer in a manner to reach said p-GaAs substrate; a p-Ga 1-x Al x As first cladding layer formed on said n-GaAs current blocking layer; a p-Ga 1-y Al y As active layer formed on said p-Ga 1-x Al x As first cladding layer; an n-Ga 1-x Al x As second cladding layer formed on said p-Ga 1-y Al y As active layer; and an n-GaAs cap layer formed on said n-Ga 1-x Al x As second cladding layer, wherein said AlAs mole fraction x of the first and second cladding layers is selected between about 0.45 and 0.52.
Claim 7
Dependent Claim
31 words
The V-channeled substrate inner stripe (VSIS) semiconductor laser of claim 4, wherein the cavity length of said V-channeled substrate inner stripe (VSIS) semiconductor laser is selected longer than about 300 µm.
Claim 8
Dependent Claim
55 words
The V-channeled substrate inner stripe (VSIS) semiconductor laser of claim 4 or 5, said V-channeled substrate inner stripe (VSIS) semiconductor laser having a front facet of which reflectivity is R 1 and a rear facet of which the reflectivity is R 2 , said reflectivities R 1 and R 2 . satisfying the following condition:
Claim 11
Dependent Claim
119 words
An index guided semiconductor laser having an inner stripe structure and comprising first and second cladding layers and an active layer sandwiched by said first and second cladding layers, characterised in that the laser further comprises one or more of the following features, namely: (i) said first and second cladding layers have a predetermined mole fraction selected to reduce the occurrence of mode competition noise at the desired operating temperature of the laser; (ii) the laser has a cavity length selected to reduce the occurrence of mode competition noise at the desired operating temperature of the laser; and (iii) the laser has front and rear facets with reflectivities R 1 and R 2 , respectively, which satisfy the condition
Claim 12
Dependent Claim
119 words
An index guided semiconductor laser having an inner stripe structure and comprising first and second cladding layers and an active layer sandwiched by said first and second cladding layers, characterised in that the laser further comprises one or more of the following features, namely: (i) said first and second cladding layers have a predetermined mole fraction selected to reduce the occurrence of mode competition noise at the desired operating temperature of the laser; (ii) the laser has a cavity length selected to reduce the occurrence of mode competition noise at the desired operating temperature of the laser; and (iii) the laser has front and rear facets with reflectivities R 1 and R 2 , respectively, which satisfy the condition
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.