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Bipolar Transistor-Field Effect Transistor Composite Circuit

Assignee: Hitachi Ltd
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Filing: 1984-12-10
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Granted: —
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Expires: 2004-12-10
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Abstract

Abstract A bipolar transistor-complementary field effect transistor composite circuit for performing the same logic function as that of a complementary field effect transistor logic circuit, comprises; a first bipolar transistor (11) having a collector (C) of one conductivity type connected to a first potential (V cc ) and an emitter (E) of one conductivity type connected to an output terminal (V o ), a second bipolar transistor (12) having a collector (C) of one conductivity type connected to the output terminal (V o ) and an emitter (E) of one conductivity type connected to a second potential (GND), a first field effect transistor circuit (21) connected between a base (B) and the collector (C) of the first bipolar transistor (11), the first field effect transistor circuit having the same circuit configuration as that of an other conductivity type field effect transistor circuit in the complementary field effect transistor logic circuit, a second field effect transistor circuit (14) connected between the base (B) of the first bipolar transistor (11) and the second potential (GND), the second field effect transistor circuit having the same circuit configuration as that of a one conductivity type field effect transistor circuit in the complementary field effect transistor logic circuit, a third field effect transistor circuit (31) connected between a base (B) of and the collector (C) of the second bipolar transistor (12), the third field effect transistor circuit having the same circuit configuration as that of the one conductivity type field effect transistor circuit in the complementary field effect transistor logic circuit. The composite circuit has a fourth field effect transistor circuit (51) of the one conductivity type connected between the base (8) of the second bipolar transistor (12) and the second potential (GND) to respond to an output of the complementary field effect transistor circuit constructed by the first field effect transistor circuit (21) and the second field effect transistor circuit (41). The same input (V I ) as that to the corresponding field effect transistors in the complementary field effect transistor logic circuit is applied to the first, second and third field effect transistor circuits.

Inventors

  • 👤 Masahiro Iwamura
  • 👤 Ikuro Masuda

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-25 19:31
CPC Classifications
H; H03; H03K; H03K19/00; H03K19/02; H03K19/08; H03K19/094; H03K19/0944; H03K19/09448

Claims Analysis

Total Claims: 9
Claim 1
Independent Claim 346 words
A bipolar transistor-complementary field effect transistor composite circuit for performing the same logic function as that of a complementary field effect transistor logic circuit, comprising: a first bipolar transistor (11) having a collector (C) of one conductivity type connected to a first potential (V CC ) and an emitter (E) of one conductivity type connected to an output terminal (V o ); a second bipolar transistor (12) having a collector (C) of one conductivity type connected to said output terminal (V o ) and an emitter (E) of one conductivity type connected to a second potential (GND); a first field effect transistor circuit (21) connected between a base (B) and the collector (C) of said first bipolar transistor (11), said first field effect transistor circuit having the same circuit configuration as that of the other conductivity type field effect transistor circuit in said complementary field effect transistor logic circuit; a second field effect transistor circuit (41) connected between the base (B) of said first bipolar transistor (11) and said second potential (GND), said second field effect transistor circuit having the same circuit configuration as that of a one-conductivity type field effect transistor circuit in said complementary field effect transistor logic circuit; a third field effect transistor circuit (31) connected between a base (B) of and the collector (C) of said second bipolar transistor (12), said third field effect transistor circuit having the same circuit configuration as that of the one conductivity type field effect transistor circuit in said complementary field effect transistor logic circuit; and a fourth field effect transistor circuit (51) of the one conductivity type connected between the base (B) of said second bipolar transistor (12) and said second potential (GND) to respond to an output of the complementary field effect transistor circuit constructed by said first field effect transistor circuit (21) and said second field effect transistor circuit (41); the same input (V I ) as that to the corresponding field effect transistors in said complementary field effect transistor logic circuit being applied to said first, second and third field effect transistor circuits.
Claim 2
Dependent Claim 346 words
A bipolar transistor-complementary field effect transistor composite circuit for performing the same logic function as that of a complementary field effect transistor logic circuit, comprising: a first bipolar transistor (11) having a collector (C) of one conductivity type connected to a first potential (V CC ) and an emitter (E) of one conductivity type connected to an output terminal (V o ); a second bipolar transistor (12) having a collector (C) of one conductivity type connected to said output terminal (V o ) and an emitter (E) of one conductivity type connected to a second potential (GND); a first field effect transistor circuit (21) connected between a base (B) and the collector (C) of said first bipolar transistor (11), said first field effect transistor circuit having the same circuit configuration as that of the other conductivity type field effect transistor circuit in said complementary field effect transistor logic circuit; a second field effect transistor circuit (41) connected between the base (B) of said first bipolar transistor (11) and said second potential (GND), said second field effect transistor circuit having the same circuit configuration as that of a one-conductivity type field effect transistor circuit in said complementary field effect transistor logic circuit; a third field effect transistor circuit (31) connected between a base (B) of and the collector (C) of said second bipolar transistor (12), said third field effect transistor circuit having the same circuit configuration as that of the one conductivity type field effect transistor circuit in said complementary field effect transistor logic circuit; and a fourth field effect transistor circuit (51) of the one conductivity type connected between the base (B) of said second bipolar transistor (12) and said second potential (GND) to respond to an output of the complementary field effect transistor circuit constructed by said first field effect transistor circuit (21) and said second field effect transistor circuit (41); the same input (V I ) as that to the corresponding field effect transistors in said complementary field effect transistor logic circuit being applied to said first, second and third field effect transistor circuits.
Claim 3
Dependent Claim 15 words
A composite circuit according to Claim 1 wherein said field effect transistors are MOS transistors.
Claim 4
Dependent Claim 33 words
A composite circuit according to Claim 1 wherein an input of said fourth field effect transistor circuit (51) is connected to the base of said first bipolar transistor (Figs. 5, 9 and 10).
Claim 5
Dependent Claim 31 words
A composite circuit according to Claim 1 wherein an input of said fourth field effect transistor circuit is connected to the emitter of said first bipolar transistor (Figs. 11 - 13).
Claim 6
Dependent Claim 14 words
A composite circuit according to Claim 1 wherein said logic circuit is an inverter.
Claim 7
Dependent Claim 15 words
A composite circuit according to Claim 1 wherein said logic circuit is a NAND circuit.
Claim 8
Dependent Claim 15 words
A composite circuit according to Claim 1 wherein said logic circuit is a NOR circuit.
Claim 9
Dependent Claim 33 words
A composite circuit according to Claim 1 wherein said one conductivity type is an N-type and said other conductivity type is a P-type, and said first potential is higher than said second potential.

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