Electronic components comprising cured vinyl and/or acetylene terminated copolymers and methods for forming the same

Claim 2

Electronic component for fabrication of semiconductor structures comprising an insulator isolating portions of a substrate having circuitry formed therein, wherein the insulator comprises a polymer which has been cured in situ on the substrate from a polymerizable oligomer selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof which polymerizable oligomer is vinyl and/or acetylenic end-capped.

Claim 3

Substrate having a plurality of vertically spaced conductor patterns interconnected to each other and separated by an insulator therebetween, said insulator comprising a polymer formed by in situ curing on the substrate a composition containing a polymerizable oligomer selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof which polymerizable oligomer is vinyl and/or acetylenic end-capped, said curing being effected prior to the inclusion of an overlying layer on the conductor pattern.

Claim 4

Substrate having a plurality of vertically spaced conductor patterns interconnected to each other and separated by an insulator therebetween, said insulator comprising a polymer formed by in situ curing on the substrate a composition containing a polymerizable oligomer selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof which polymerizable oligomer is vinyl and/or acetylenic end-capped, said curing being effected prior to the inclusion of an overlying layer on the conductor pattern.

Claim 5

Substrate of Claim 2 wherein the substrate comprises an integrated circuit device having elements thereof interconnected to the conductor patterns.

Claim 6

Substrate of Claim 2 wherein the substrate comprises a multilayer ceramic having conductive circuitry embedded therein and connected to the conductor pattern.

Claim 7

Substrate of Claim 4 where the ceramic is alumina.

Claim 8

Substrate of Claim 2 where the substrate comprises a glass ceramic having conductive circuitry embedded therein and connected to the conductor patterns.

Claim 9

Method as claimed in Claim 2, of forming multilevel metallurgy on a substrate having a first conductor pattern on a surface thereof comprising: (a) coating the surface and the first conductor pattern with a composition containing a polymerizable oligomer selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof which polymerizable oligomer is vinyl and/or acetylenic end-capped; (b) curing the composition to form a three-dimensional imidized layer thereof; (c) forming via openings in the imidized layer extending to the underlying first conductor pattern; and (d) forming a second conductive pattern on the imidized layer and in the via openings to the underlying first conductor pattern.

Claim 10

8 . The method of Claim 7 including repeating steps (a) to (d) to the desired multilevel metallurgy desired.

Claim 11

9 . Semiconductor substrate containing isolated island regions thereof separated by a trench pattern containing an in situ cured polyimide obtained by curing a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof which polymerizable oligomer is vinyl and/or acetylenic end-capped.

Claim 12

9 . Semiconductor substrate containing isolated island regions thereof separated by a trench pattern containing an in situ cured polyimide obtained by curing a composition comprising a polymerizable oligomer selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof which polymerizable oligomer is vinyl and/or acetylenic end-capped.

Claim 13

10 . Method as claimed in Claim 9, for forming dielectrically isolated island regions in a semiconductor substrate comprising: (a) forming in the substrate a recessed trench pattern defining a plurality of isolated island regions; (b) filling the trenches with a composition containing as a component a polymerizable oligomer selected from the group consisting of polyamic acid, the corresponding amic ester, the corresponding isoimide, the corresponding imide and mixtures thereof which polymerizable oligomer is vinyl and/or acetylenic end-capped; (c) curing the composition in situ in the trenches to form an imidized three-dimensional dielectric polyimide therein.

Claim 14

11 . Method of Claim 10 including forming an integrated circuit in the island regions.