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EP0139431A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of mounting a carrier for a microelectronic silicon chip

Assignee: ZF International UK Ltd
•
Filing: 1984-09-03
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Granted: —
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Expires: 2004-09-03
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Abstract

Abstract A chip carrier (11) is to be mounted on a substrate (13) which includes a thermally conductive layer (14). A hole is formed in an insulating layer (15) to expose the thermally conductive layer (14) and the hole is filled with a thermally conductive material (18). A metallised zone (20) of the carrier overlays the material (18) and is soldered thereto with the same solder as is used to make electrical connections (12,17, 19) to the carrier (11).

Inventors

  • 👤 John David Lewis

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-24 11:41
CPC Classifications
H; H05; H05K; H05K3/00; H05K3/30; H05K3/32; H05K3/34; H05K3/341; H05K3/3431; H05K3/3442; H05K1/00; H05K1/02; H05K1/0201; H05K1/0203; H05K1/0207; H10; H10W; H10W40/00; H10W40/20; H10W40/22; H10W40/226; H10W40/228; H05K1/0204; H05K1/0206; H05K2201/00; H05K2201/09; H05K2201/09209; H05K2201/095; H05K2201/09572; H05K2201/10; H05K2201/10227; H05K2201/10416; H05K2201/10613; H05K2201/10621; H05K2201/10727; H05K2201/10954; H05K2201/10969; H05K2203/00; H05K2203/04; H05K2203/0455; H05K3/40; H05K3/4038; H05K3/4046; H05K3/42; H05K3/429; H05K3/46; H05K3/4611; H05K3/4641; Y; Y02; Y02P; Y02P70/00; Y02P70/50

Claims Analysis

Total Claims: 6
Claim 1
Independent Claim 177 words
A method of mounting a carrier (11 or 37) of a microelectronic silicon chip on to an electrically insulating support (13 or 30) which includes a layer (14 or 34) of high thermal conductivity, said method including the steps of making a thermal connection (18 or 45) between said layer (14 or 34) and an electrically insulating surface (15 or 36) of said support (13 or 30) at a location thereon where said carrier (11 or 39) is to be secured, metallising a zone (20 or 44) of a face of said carrier (11 or 39) which is to lie adjacent said support (13 or 30) and securing said zone (20 or 44) to said thermal connection (18 or 45) by means of a thermally conductive material (19 or 43), characterised in that said zone (20 or 44) is secured to said thermal connection (18 or 45) by means of the solder which is used to secure terminals (12 or 38) of the carrier (11 or 39) to a wiring pattern on the support (13 or 30).
Claim 2
Independent Claim 177 words
A method of mounting a carrier (11 or 37) of a microelectronic silicon chip on to an electrically insulating support (13 or 30) which includes a layer (14 or 34) of high thermal conductivity, said method including the steps of making a thermal connection (18 or 45) between said layer (14 or 34) and an electrically insulating surface (15 or 36) of said support (13 or 30) at a location thereon where said carrier (11 or 39) is to be secured, metallising a zone (20 or 44) of a face of said carrier (11 or 39) which is to lie adjacent said support (13 or 30) and securing said zone (20 or 44) to said thermal connection (18 or 45) by means of a thermally conductive material (19 or 43), characterised in that said zone (20 or 44) is secured to said thermal connection (18 or 45) by means of the solder which is used to secure terminals (12 or 38) of the carrier (11 or 39) to a wiring pattern on the support (13 or 30).
Claim 3
Dependent Claim 47 words
A method as claimed in claim 1 in which said thermal connection is made by forming a hole in said insulating surface (15 or 36) to expose said layer (14 or 34) of high thermal conductivity, and introducinga thermally conductive material (18 or 45) into said hole.
Claim 4
Dependent Claim 24 words
A method as claimed in claim 2 in which said introduction of thermally conductive material (45) into said hole (40) is effected by plating.
Claim 5
Dependent Claim 20 words
A method as claimed in claim 2 or claim 3 in which solder (43) is introduced into said hole (40).
Claim 6
Dependent Claim 30 words
A method as claimed in claim 2 or claim 3 in which a plurality of said holes (40) are formed and a thermally conductive material (45) is introduced into each.

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