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EP0137555A1 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method of manufacturing a light-emitting device

Assignee: Koninklijke Philips NV
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Filing: 1984-09-14
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Granted: —
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Expires: 2004-09-14
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Abstract

Abstract On a support (1) which supports a light-emitting semiconductor device (5) there is arranged a cap (19) which is hermetically sealed to the support. In the cap (19) there is provided a transparent plate (23), an inner layer (31) of which facing the semiconductor device (5) consists of a material having a high refractive index (>1.7). On the outer side of the plate (23) there is provided a layer of photosensitive lacquer (25) which is exposed to the light emitted by the semiconductor device (5). After development of the layer of lacquer, only the exposed part (35) which is situated opposite the semiconductor device remains. This part is heated to the melting point, thus forming a droplet of lacquer (37), after which the outer layer of the plate (23) and the droplet of lacquer are removed by way of a non-selective etching method, so that a lens (39) which is situated opposite the semiconductor device (5) and a flat window (41) which surrounds the lens are automatically formed at the same time.

Inventors

  • 👤 Giok Djan Khoe
  • 👤 Henricus Maria De Vrieze

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-11-02 21:59
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/85; H10H20/855

Claims Analysis

Total Claims: 5
Claim 1
Independent Claim 200 words
A method of manufacturing a light-emitting device in which a cap comprising a flat, transparent window is arranged on a support which supports a light-emitting semiconductor device, said cap being hermetically sealed to the support and said window being provided with a lens, characterized in that the window and the lens are formed by arranging a transparent plate in the cap, at least an inner layer of said plate which faces the semiconductor device being made of a material having a high refractive index, a layer of photosensitive lacquer being provided on the outer side of the plate after the connection of the cap to the support, after which a part of the layer of lacquer is exposed to light emitted by the semiconductor device, followed by development, so that only the exposed part which is situated. opposite the semiconductor device remains, said exposed part subsequently being heated to the melting point, thus forming a droplet of lacquer, after which an outer layer of the plate and the droplet of lacquer are removed by a non-selective etching method so that the lens sittuated opposite the semiconductor device and a flat window surrounding the lens are formed at the same time.
Claim 2
Independent Claim 200 words
A method of manufacturing a light-emitting device in which a cap comprising a flat, transparent window is arranged on a support which supports a light-emitting semiconductor device, said cap being hermetically sealed to the support and said window being provided with a lens, characterized in that the window and the lens are formed by arranging a transparent plate in the cap, at least an inner layer of said plate which faces the semiconductor device being made of a material having a high refractive index, a layer of photosensitive lacquer being provided on the outer side of the plate after the connection of the cap to the support, after which a part of the layer of lacquer is exposed to light emitted by the semiconductor device, followed by development, so that only the exposed part which is situated. opposite the semiconductor device remains, said exposed part subsequently being heated to the melting point, thus forming a droplet of lacquer, after which an outer layer of the plate and the droplet of lacquer are removed by a non-selective etching method so that the lens sittuated opposite the semiconductor device and a flat window surrounding the lens are formed at the same time.
Claim 3
Dependent Claim 79 words
A method as claimed in Claim 1, characterized in that on its side which faces the outer side of the cap, the plate which is used to form the window and the lens comprises a layer of a material having a refractive index which is lower than that of the material of the layer on its inner side, the etching operation being continued at least until the outer layer has been conpletely removed at the area of the lens.
Claim 4
Dependent Claim 77 words
A light-emitting device, comprising a support on which there is provided a light-emitting semiconductor device and a cap which is arranged on the support and which is hermetically sealed thereto, said cap comprising a window with a lens, the device being manufactured by means of the method claimed in Claim 1 or 2, characterized in that the lens and the window are formed as an integral unit from a layer of material having a high refractive index.
Claim 5
Dependent Claim 17 words
A device as claimed in Claim 3, characterized in that the semiconductor device is a semiconductor laser.

References Cited (Backward Citations)

US3816847A Cited
US3981023A Cited
GB2023928A Cited

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