Abstract A method for the production of semiconductor lasers comprises: (a) forming a substrate (10) having a striped portion (20) on its face, said striped portion being formed into a mesa (11), (b) forming a current blocking layer on each of said striped portion (21) and the remaining face of said substrate (2), (c) eliminating said current blocking layer (21) only on said striped portion (20) together with the latter thereby allowing electric current to flow through the substrate and form said striped portion into a terrace (110) or a groove, as a whole, and (d) successively laminating crystal growth layers (3, 4, 5 and 6) for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.
A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate.
Claim 2
Independent Claim
112 words
A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate.
Claim 3
Dependent Claim
22 words
A method according to Claim 1, wherein said growth layers include one,selected from the GaAlAs, InGaP, InGaAlP, InAlAs, InGaAs and InGaAsP systems.
Claim 4
Dependent Claim
23 words
A method according to Claim 1 or 2, wherein said growth layers are grown by molecular beam epitaxy or metal-organic chemical vapor deposition.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.