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EP0136097A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Method for the production of semiconductor lasers

Assignee: Sharp Corp
•
Filing: 1984-08-29
•
Granted: —
•
Expires: 2004-08-29
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Abstract

Abstract A method for the production of semiconductor lasers comprises: (a) forming a substrate (10) having a striped portion (20) on its face, said striped portion being formed into a mesa (11), (b) forming a current blocking layer on each of said striped portion (21) and the remaining face of said substrate (2), (c) eliminating said current blocking layer (21) only on said striped portion (20) together with the latter thereby allowing electric current to flow through the substrate and form said striped portion into a terrace (110) or a groove, as a whole, and (d) successively laminating crystal growth layers (3, 4, 5 and 6) for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate, thereby attaining stabilization of the transverse mode of laser oscillation.

Inventors

  • 👤 Toshiro Hayakawa
  • 👤 Nobuyuki Miyauchi
  • 👤 Seiki Yano
  • 👤 Takahiro Suyama

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-26 00:55
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/30; H01S5/34; B; B82; B82Y; B82Y20/00; H01S5/20; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234; H01S5/2235

Claims Analysis

Total Claims: 4
Claim 1
Independent Claim 112 words
A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate.
Claim 2
Independent Claim 112 words
A method for the production of semiconductor lasers comprising: (a) forming a substrate having a striped portion on its face, said striped portion being formed into a mesa, (b) forming a current blocking layer on each of said striped portion and the remaining face of said substrate, (c) eliminating said current blocking layer only on said striped portion thereby allowing electric current to flow through the substrate and form said striped portion into a terrace or a groove, as a whole, and (d) successively laminating crystal growth layers for laser operation on the whole face of the substrate in strict conformity with said terrace or groove on the face of said substrate.
Claim 3
Dependent Claim 22 words
A method according to Claim 1, wherein said growth layers include one,selected from the GaAlAs, InGaP, InGaAlP, InAlAs, InGaAs and InGaAsP systems.
Claim 4
Dependent Claim 23 words
A method according to Claim 1 or 2, wherein said growth layers are grown by molecular beam epitaxy or metal-organic chemical vapor deposition.

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