Patent EP0135366A1 successfully refreshed from Google Patents.
EP0135366A1
Expired / Lapsed
EP
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System and method for ion implantation
Assignee: Applied Materials Inc
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Filing: 1984-08-15
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Granted: —
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Expires: 2004-08-15
Abstract
Abstract The disclosure relates to a system for implanting ions into a target element including a source arrangement (130) for producing an ion beam (131); a beam analyzing arrangement (140) for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement (150) disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element (171). The ion source arrangement (130) has an exit aperture (132) electrically biased to a preanalysis acceleration voltage, an extraction electrode (137) near the aperture and biased to accelerate ions from the aperture and a deceleration electrode (138) downstream of the acceleration electrode (137) biased to decrease the velocity of the ions passing between the electrodes to provide a high extraction- potential and also a low velocity at entry to the beam analyzing arrangement.
Inventors
- 👤 Derek Aitken
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 13:11
CPC Classifications
H; H01; H01J; H01J49/00; H01J49/26; H01J49/28; H01J49/30; H01J27/00; H01J27/02; H01J27/022; H01J27/028; H01J27/08; H01J27/14; H01J37/00; H01J37/02; H01J37/04; H01J37/05; H01J37/08; H01J37/30; H01J37/317; H01J37/3171
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
102 words
In a system for implanting ions into a target element, ion source means including an ion exit aperture through which generated ions may freely pass and being electrically biased to a preanalysis acceleration voltage; an extraction electrode positioned in the vicinity of said exit aperture and biased to a voltage value relative to said preanalysis acceleration voltage to extract and accelerate ions from said source; and a deceleration electrode positioned downstream of said extraction electrode and being biased to a voltage value relative to said extraction voltage value substantially to decrease the velocity of ions passing through the region between said electrodes.
Claim 2
Dependent Claim
102 words
In a system for implanting ions into a target element, ion source means including an ion exit aperture through which generated ions may freely pass and being electrically biased to a preanalysis acceleration voltage; an extraction electrode positioned in the vicinity of said exit aperture and biased to a voltage value relative to said preanalysis acceleration voltage to extract and accelerate ions from said source; and a deceleration electrode positioned downstream of said extraction electrode and being biased to a voltage value relative to said extraction voltage value substantially to decrease the velocity of ions passing through the region between said electrodes.
Claim 3
Dependent Claim
75 words
The system of Claim 1, further comprising a stabilized power supply for supplying said preanalysis acceleration voltage and an unstabilized power supply for supplying said voltage to said extraction electrode so that said extraction electrode voltage will rapidly drop in magnitude when a spark discharge occurs between said source and said extraction electrode, thereby limiting the energy of, and quickly quenching, said spark without substantially affecting the velocity of extracted ions entering said analyzing means.
Claim 4
Dependent Claim
41 words
The system of claim 1 or claim 2, wherein said bias voltage on said extraction electrode has a magnitude at least ten percent of the difference in magnitudes of said preanalysis acceleration voltage and the voltage applied to said deceleration electrode.
Claim 5
Dependent Claim
115 words
In a method for operating an ion source system comprising an ion source having an ion emitting region, an extraction electrode positioned in the vicinity of said ion emitting region, and a second electrode positioned substantially adjacent said extraction electrode, the steps of: applying a preanalysis acceleration voltage to said ion source; applying to said extraction electrode a bias potential having a value relative to said preanalysis acceleration voltage to extract and accelerate ions from said source; and applying to said second electrode a bias potential having a value relative to said bias potential value on said extraction electrode to reduce substantially the velocity of ions travelling between said extraction electrode and said second electrode.
Claim 6
Dependent Claim
115 words
In a method for operating an ion source system comprising an ion source having an ion emitting region, an extraction electrode positioned in the vicinity of said ion emitting region, and a second electrode positioned substantially adjacent said extraction electrode, the steps of: applying a preanalysis acceleration voltage to said ion source; applying to said extraction electrode a bias potential having a value relative to said preanalysis acceleration voltage to extract and accelerate ions from said source; and applying to said second electrode a bias potential having a value relative to said bias potential value on said extraction electrode to reduce substantially the velocity of ions travelling between said extraction electrode and said second electrode.
Claim 7
Dependent Claim
40 words
The method of Claim 4, wherein said bias potential applied to said extraction electrode has a magnitude at least ten percent of the difference in magnitudes of said preanalysis acceleration voltage and said bias potential applied to said second electrode.
Claim 8
Dependent Claim
87 words
The method of claim 4 or claim 5, wherein the step of applying said preanalysis acceleration voltage to said source comprises applying a stabilized potential thereto and the step of applying a bias potential to said extraction electrode comprises applying an unstabilized potential thereto so that said potential will rapidly drop in magnitude when a spark discharge occurs between said source and said extraction electrode, thereby limiting the energy of, and quickly quenching, said spark without substantially affecting the velocity of extracted ions entering said analyzing means.
Claim 9
Independent Claim
55 words
A method for generating an ion beam for an ion implantation system comprising the steps of: creating a plasma of ions within a generally confined volume; extracting a beam of ions from said plasma with an accelerating voltage; and decelerating said beam of ions with a substantial decelerating voltage relative to said accelerating voltage. -
Claim 10
Independent Claim
55 words
A method for generating an ion beam for an ion implantation system comprising the steps of: creating a plasma of ions within a generally confined volume; extracting a beam of ions from said plasma with an accelerating voltage; and decelerating said beam of ions with a substantial decelerating voltage relative to said accelerating voltage. -
Claim 11
Dependent Claim
30 words
The method of Claim 7, wherein the deceleration of said beam produced by said decelerating voltage has a magnitude at least ten percent of the final energy of the beam.
References Cited (Backward Citations)
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