Patent EP0134716A1 successfully refreshed from Google Patents.
EP0134716A1
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Process for high temperature drive-in diffusion of dopants into semiconductor wafers
Assignee: Varian Semiconductor Equipment Associates Inc
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Filing: 1984-08-23
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Granted: —
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Expires: 2004-08-23
Abstract
Abstract A process for high temperature, rapid drive-in diffusion employs a planar blackbody source placed in parallel alignment with a semiconductor wafer in a vacuum processing chamber. The wafer is rapidly heated, preferably to a temperature in the range of 1100°C to 1300°C and primarily by radiation which promotes uniformity. Typical diffusions are completed in less than one minute. In order to control diffusion distance at elevated temperatures, the process time and source temperature are carefully controlled, and the peak wafer temperature is monitored.
Inventors
- 👤 Carl Joseph Russo
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 03:01
CPC Classifications
C; C30; C30B; C30B31/00; C30B31/06; C30B31/12; Y; Y10; Y10S; Y10S148/00; Y10S148/004
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
80 words
A process for high temperature drive-in diffusion of dopants deposited on or near the surface of a semiconductor wafer, comprising: providing a radiation source having a relatively uniform planar energy flux characteristic; and directing an intense beam of radiation from said source to said wafer and said dopants at a power level sufficient to raise the temperature of said wafer and said dopants to between 1000°C and 1350°C for a time selected to produce a prescribed amount of dopant diffusion.
Claim 2
Dependent Claim
80 words
A process for high temperature drive-in diffusion of dopants deposited on or near the surface of a semiconductor wafer, comprising: providing a radiation source having a relatively uniform planar energy flux characteristic; and directing an intense beam of radiation from said source to said wafer and said dopants at a power level sufficient to raise the temperature of said wafer and said dopants to between 1000°C and 1350°C for a time selected to produce a prescribed amount of dopant diffusion.
Claim 3
Dependent Claim
21 words
A process as defined in claim 1 wherein said step of providing a radiation source includes providing a planar blackbody source.
Claim 4
Dependent Claim
21 words
A process as defined in claim 2 wherein said step of providing a radiation source includes providing a planar graphite heater.
Claim 5
Dependent Claim
24 words
A process as defined in claim 2 further including the step of positioning said wafer in parallel, spaced-apart alignment with said planar blackbody source.
Claim 6
Dependent Claim
32 words
A process as defined in claim 4 further including the step of controlling the pressure in the region between said source and said wafer to provide predominantly radiative heating of said wafer.
Claim 7
Dependent Claim
54 words
The process as defined in claim 5 further including the step of controlling said dopant diffusion by operating said source during said process at a predetermined temperature and monitoring the peak temperature of said wafer during said process whereby the transient temperature response of said wafer and the corresponding dopant diffusion can be determined.
Claim 8
Dependent Claim
31 words
The process as defined in claim 6 wherein said beam of radiation from said source is directed at said wafer for a time in the range of 8 to 60 seconds.
Claim 9
Dependent Claim
20 words
The process as defined in claim 1 wherein said step of providing a radiation source includes providing a lamp source.
Claim 10
Dependent Claim
25 words
The process as defined in claim 1 wherein the temperature of said wafer and said dopants is controlled in the range between 1100°C and 1300°C.
References Cited (Backward Citations)
US3842794A
Cited
GB2098437A
Cited
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