EP0134645A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of forming thin film
Assignee: Toshiba Corp
•
Filing: 1984-06-29
•
Granted: —
•
Expires: 2004-06-29
Abstract
Abstract A method of forming with good reproducibility a high-quality thin film of a metal or metal compound by a vapor growth method on a substrate placed in a quartz reaction tube which has the steps of, prior to the formation of the thin film forming an intermediate film (21) of a material having good adhesion with both quartz, and the metal or metal compound on the inner wall of the reaction tube (1), and forming a film (22) of the metal or metal compound for the thin film on the intermediate film (21).
Inventors
- 👤 Takahiko C/O Patent Division Moriya
- 👤 Saburo C/O Patent Division Nakada
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 20:45
CPC Classifications
C; C03; C03C; C03C17/00; C03C17/34; C03C17/36; C03C17/3602; C03C17/3607; C03C17/3636; C03C17/3649; C23; C23C; C23C16/00; C23C16/02; C23C16/0272; C23C16/44; C23C16/4401; C23C16/4404; H; H10; H10P; H10P14/00; H10P14/40; H10P14/42
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
83 words
A method of forming a thin film of a metal or metal compound by a vapor growth method on a substrate placed in a quartz reaction tube, characterized by comprising, prior to formation of the thin film; forming an intermediate film (21) of a material having good adhesion with both quartz, and the metal or metal compound on an inner wall of said reaction tube (1); and forming a film (22) of the metal or metal compound film on said intermediate film (21).
Claim 2
Independent Claim
83 words
A method of forming a thin film of a metal or metal compound by a vapor growth method on a substrate placed in a quartz reaction tube, characterized by comprising, prior to formation of the thin film; forming an intermediate film (21) of a material having good adhesion with both quartz, and the metal or metal compound on an inner wall of said reaction tube (1); and forming a film (22) of the metal or metal compound film on said intermediate film (21).
Claim 3
Dependent Claim
21 words
A method according to claim 1, characterized in that said intermediate film (21) comprises one of silicon and a metal silicide.
Claim 4
Dependent Claim
28 words
A method according to claim 2, characterized in that the metal silicide is a material selected from the group consisting of tungsten silicide, molybdenum silicide and titanium silicide.
Claim 5
Dependent Claim
55 words
A method according to claim 1, characterized in that said intermediate film (21) comprises a two-layer structure having a first film of a material having good adhesion with quartz and a second film of a material having good adhesion with the metal or metal compound, said first film being sufficiently adhered to said second film.
Claim 6
Dependent Claim
26 words
A method according to claim 1, characterized in that the metal is a member selected from the group consisting of tungsten, molybdenum, tantalum, titanium and aluminum.
Claim 7
Dependent Claim
30 words
A method according to claim 1, characterized in that the metal compound is a member selected from the group consisting of tungsten silicide, molybdenum silicide, tantalum silicide and titanium silicide.
References Cited (Backward Citations)
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.