Patent EP0132015A2 successfully refreshed from Google Patents.
EP0132015A2
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EP
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An ion beam machining device
Assignee: The University of Tokyo
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Filing: 1984-02-27
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Granted: —
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Expires: 2004-02-27
Abstract
Abstract An ion beam machining device has a plasma-generating chamber (21), a machining chamber (23), and an ion-extracting grid (22) disposed between the two chambers (21, 23). The grid (22) has an insulator layer (24) facing the plasma-generating chamber (21) and a conductor layer (25) facing the machining chamber (23). A plurality of holes (26) extend through the insulator and conductor layers (24, 25). The conductor layer (25) is held at an electric potential negative with respect to the plasma.
Inventors
- 👤 Takahisa Masuzawa
- 👤 Ichiro Tsuchiya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 19:45
CPC Classifications
H; H01; H01J; H01J37/00; H01J37/30; H01J37/305; H01J37/3053; H01J37/3056; H01J37/02; H01J37/04; H01J37/08
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
106 words
An ion beam machining device, comprising a plasma-generating chamber (21) for producing plasma ions, an ion-extracting grid (22) for extracting the produced ions as ion beams, and a machining chamber (23) for irradiating the extracted ion beams onto a workpiece (14), characterised in that the ion-extracting grid (22) has an insulator layer (24) facing the plasma-generating chamber (21). a conductor layer (25) facing the machining chamber (23), and a plurality of holes (26) extending through both the insulator layer (24) and the conductor layer (25). and means for connecting the conductor layer (25) to an electric potential which is negative relative to potential of said plasma.
Claim 2
Dependent Claim
106 words
An ion beam machining device, comprising a plasma-generating chamber (21) for producing plasma ions, an ion-extracting grid (22) for extracting the produced ions as ion beams, and a machining chamber (23) for irradiating the extracted ion beams onto a workpiece (14), characterised in that the ion-extracting grid (22) has an insulator layer (24) facing the plasma-generating chamber (21). a conductor layer (25) facing the machining chamber (23), and a plurality of holes (26) extending through both the insulator layer (24) and the conductor layer (25). and means for connecting the conductor layer (25) to an electric potential which is negative relative to potential of said plasma.
Claim 3
Dependent Claim
27 words
An ion beam machining device according to claim 1. characterized in that the insulator layer (24) of said grid (22) is thicker than its conductor layer (25).
Claim 4
Dependent Claim
37 words
An ion beam machining device according to claim 1, characterized in that said insulator layer (24) of said grid (22) has a thickness which is more than 20% of the diameter of each of the holes (26).
Claim 5
Dependent Claim
33 words
An ion beam machining device according to claim 1, characterized in that said insulator layer (24) is an alumina layer and said conductor layer (25) is a nickel film.plated on said alumina layer.
Claim 6
Dependent Claim
37 words
An ion beam machining device according to claim 1, characterized in that said conductor layer (25) is a stainless steel plate and said insulator layer (24) is a silica film vacuum deposited on said conductor layer (25).
References Cited (Backward Citations)
No citation records indexed.
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