Patent EP0128385A2 successfully refreshed from Google Patents.
EP0128385A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of producing a semiconductor device having electrodes and wirings
Assignee: Hitachi Ltd
•
Filing: 1984-05-15
•
Granted: —
•
Expires: 2004-05-15
Abstract
Abstract A silicide layer or silicon alloy layer (4) is formed within a surface region of an impurity-doped region (7) on the surface of a semiconductor substrate (1) by implanting and heating any of those metals which can form silicides or silicon alloys with silicon upon heating. The peel of a metallic electrode or wiring (5) can thus be prevented, and the electrode or wiring (5) can be directly formed on the semiconductor substrate (1).
Inventors
- 👤 Yamamoto Naoki
- 👤 Sakudo Noriyuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 08:22
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D30/061; H10D64/00; H10D64/01; H10D64/011; H10D64/0111; H10D64/0112; H10P14/00; H10P14/40; H10P14/412; H10P30/208; H10P30/21; H10P30/28; H10P95/00; H10P95/90; Y; Y10; Y10S; Y10S148/00; Y10S148/14
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
81 words
A method of producing a semiconductor device, characterized by the following steps: implanting ions of any of those metals which can form metallic silicides or silicon alloys (4) with silicon upon heating into a desired portion of an impurity-doped region (7) formed in advance within a surface region of a semiconductor substrate (1); forming said metallic silicide or silicon alloy (4) by heating; and forming a wiring layer or electrode (5) connected electrically on the surface of said ion-implanted region (4).
Claim 2
Independent Claim
81 words
A method of producing a semiconductor device, characterized by the following steps: implanting ions of any of those metals which can form metallic silicides or silicon alloys (4) with silicon upon heating into a desired portion of an impurity-doped region (7) formed in advance within a surface region of a semiconductor substrate (1); forming said metallic silicide or silicon alloy (4) by heating; and forming a wiring layer or electrode (5) connected electrically on the surface of said ion-implanted region (4).
Claim 3
Independent Claim
78 words
A method of producing a semiconductor device, characterized by the following steps: implanting ions of any of those metals which can form metallic silicides or a silicon alloy layer (4") with silicon upon heating into a desired portion of a surface region of a semiconductor substrate (1); forming said metallic silicide or silicon alloy (4") by heating; and forming a metallic film (9) on the surface of said ion-implanted region (4") so as to form a Schottky junction.
Claim 4
Independent Claim
78 words
A method of producing a semiconductor device, characterized by the following steps: implanting ions of any of those metals which can form metallic silicides or a silicon alloy layer (4") with silicon upon heating into a desired portion of a surface region of a semiconductor substrate (1); forming said metallic silicide or silicon alloy (4") by heating; and forming a metallic film (9) on the surface of said ion-implanted region (4") so as to form a Schottky junction.
Claim 5
Dependent Claim
45 words
The method of producing a semiconductor device as defined in claim 1 or claim 2 wherein the formation of said metallic silicide or silicon alloy (4, 4") is effected before the deposition of said wiring layer or electrode (5) or of said metallic film (9).
Claim 6
Dependent Claim
45 words
The method of producing a semiconductor device as defined in claim 1 or claim 2 wherein the formation of said metallic silicide or silicon alloy (4, 4") is effected after the deposition of said wiring layer or electrode (5) or of said metallic film (9).
Claim 7
Independent Claim
32 words
The method of producing a semiconductor device as defined in any of claims 1 to 4 wherein said metal is selected from the group consisting of W, Mo, Ti, Ta and Ai.
Claim 8
Independent Claim
32 words
The method of producing a semiconductor device as defined in any of claims 1 to 5 wherein the acceleration voltage for the ion implantation is from about 40 to about 150 keV.
Claim 9
Independent Claim
45 words
The method of producing a semiconductor device as defined in any of claims 1 to 6 wherein the dose of the ion implantation is at least about 5 x 10 14 /cm 2 , preferably at least about 5 x 10 16 /cm 2 .
Claim 10
Independent Claim
34 words
The method of producing a semiconductor device as defined in any of claims 1 to 7 wherein the heating temperature is from about 400 to about 1,200°C, preferably from about 600 to about 1,200°C.
Claim 11
Independent Claim
43 words
The method of producing a semiconductor device as defined in any of claims 1 to 8 wherein said wiring layer or electrode (5) or said metallic film (9) is made of a material selected from the group consisting of W, Mo and Aℓ.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.