Patent EP0127281A1 successfully refreshed from Google Patents.
EP0127281A1
Expired / Lapsed
EP
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An electrode for a semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1984-03-23
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Granted: —
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Expires: 2004-03-23
Abstract
Abstract A semiconductor device includes an electrode having triple-layer electrode structure or a multilayer interconnecting structure comprising a contact (a lower conductive) layer (17) of aluminium or its alloy which comes into contact with a silicon substrate (1), a barrier layer (18) of refractory metal nitride (e.g. titanium nitride) and refractory metal (e.g. tungsten), and a (upper) conductive layer (19) of aluminium or its alloy. The TiN-W barrier layer (18) prevents over-dissolution of silicon into aluminum in spite of heat-treatment at a relatively elevated temperature.
Inventors
- 👤 Kiyoshi Watanabe
- 👤 Tohru Takeuchi
- 👤 Hideaki Ohtake
- 👤 Ichiro Fujita
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 15:46
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/032; H10W20/038; H10D; H10D62/00; H10D62/80; H10D62/83; H10D64/00; H10D64/60; H10D64/62; H10W20/033; H10W20/064; Y; Y10; Y10S; Y10S257/00; Y10S257/915
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
63 words
A semiconductor device, having a semiconductor substrate and an electrode, wherein the electrode comprises a contact layer, in contact with the said substrate, a further layer made of conductive material, and an intermediate layer made of a mixture of a refractory metal and a refractory metal nitride, the said intermediate layer being sandwiched between the said contact layer and the said further layer.
Claim 2
Dependent Claim
63 words
A semiconductor device, having a semiconductor substrate and an electrode, wherein the electrode comprises a contact layer, in contact with the said substrate, a further layer made of conductive material, and an intermediate layer made of a mixture of a refractory metal and a refractory metal nitride, the said intermediate layer being sandwiched between the said contact layer and the said further layer.
Claim 3
Dependent Claim
33 words
A device as claimed in claim 1, wherein the said contact layer contacts the substrate through a window in an insulating layer, and the said further layer extends over the said insulating layer.
Claim 4
Dependent Claim
30 words
A device as claimed in claim 1 or 2, wherein said contact layer is made of a conductor selected from the group consisting of aluminum, aluminum alloy, and metal silicide.
Claim 5
Dependent Claim
36 words
A device as claimed in claim 1 or 2, wherein said contact layer is made of a metal silicide selected from the group consisting of platinum silicide, tungsten silicide titanium silicide, molybdenum silicide, and tantalum silicide.
Claim 6
Independent Claim
32 words
A device as claimed in any preceding claim, wherein said refractory metal nitride is one selected from the group consisting of tungsten nitride, titanium nitride, zirconium nitride, hafnium nitride, and tantalum nitride.
Claim 7
Independent Claim
30 words
A device as claimed in any preceding claim, wherein the said further layer is made of a metal selected from the group consisting of aluminum, aluminum alloy, platinum, and gold.
Claim 8
Independent Claim
67 words
A method of manufacturing a semiconductor device, wherein an electrode is provided on a semiconductor substrate by a process comprising the steps of: forming a contact layer in contact with the said substrate, forming on the contact layer an intermediate layer made of a mixture of a refractory metal and a refractory metal nitride, and forming on the intermediate layer a further layer made of conductive material.
Claim 9
Independent Claim
67 words
A method of manufacturing a semiconductor device, wherein an electrode is provided on a semiconductor substrate by a process comprising the steps of: forming a contact layer in contact with the said substrate, forming on the contact layer an intermediate layer made of a mixture of a refractory metal and a refractory metal nitride, and forming on the intermediate layer a further layer made of conductive material.
Claim 10
Dependent Claim
46 words
A method as claimed in claim 7, wherein the said intermediate layer is formed by mixing a refractory metal powder and a refractory metal nitride powder, sintering the mixture to form a target, and sputtering the target to deposit the mixture on the said contact layer.
Claim 11
Independent Claim
35 words
A method or device, as the case may be, as claimed in any preceding claim, wherein the said refractory metal is a metal selected from the group consisting of tungsten, titanium, zirconium, hafnium, and tantalum.
Claim 12
Independent Claim
33 words
A method or device, as the case may be, as claimed in any preceding claim, wherein the proportion of refractory metal nitride in the said mixture is between 10% and 90% by weight.
References Cited (Backward Citations)
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