Patent EP0124954A2 successfully refreshed from Google Patents.
EP0124954A2
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EP
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Semiconductor devices comprising metallic silicide elements
Assignee: STC PLC
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Filing: 1984-02-03
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Granted: —
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Expires: 2004-02-03
Abstract
Abstract Polysilicon elements of integrated circuits, for example gates or interconnects, are replaced by metallic silicide elements in order to take advantage of the lower resistivity thereof. The metallic silicide elements are obtained by depositing a layer of silicon rich homogenous metallic silicides on an oxidised surface (23) of a silicon substrate (20) and subsequent patterning of the layer to provide, for example, a gate element (24).
Inventors
- 👤 Peter Denis Scovell
- 👤 Paul John Rosser
- 👤 Gary John Tomkins
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 03:58
CPC Classifications
H; H10; H10D; H10D30/00; H10D30/01; H10D30/021; H10D30/0223; H10D64/00; H10D64/01; H10D64/013; H10D64/01302; H10D64/01304; H10D64/01318; H10D64/0132; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/064; H10W20/066
Claims Analysis
Total Claims: 4
Claim 1
Independent Claim
48 words
A method of manufacturing semiconductor devices characterised by the steps of depositing a layer of a silicon rich homogeneous metallic silicide on an oxidised surface (23) of a silicon substrate (20) and patterning the layer to define at least one metallic silicide element (24) on the oxidised surface.
Claim 2
Independent Claim
48 words
A method of manufacturing semiconductor devices characterised by the steps of depositing a layer of a silicon rich homogeneous metallic silicide on an oxidised surface (23) of a silicon substrate (20) and patterning the layer to define at least one metallic silicide element (24) on the oxidised surface.
Claim 3
Dependent Claim
23 words
A method as claimed in claim 1, characterised in that the at least one metallic silicide element comprises a gate and/or an interconnection.
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 or claim 2, characterised in that the metallic silicide layer is deposited by sputtering.
References Cited (Backward Citations)
No citation records indexed.
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