Patent EP0122659A2 successfully refreshed from Google Patents.
EP0122659A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Method of manufacturing a high resistance layer having a low temperature coefficient of resistance and semiconductor device having such high resistance layer
Assignee: Koninklijke Philips NV
•
Filing: 1984-04-03
•
Granted: —
•
Expires: 2004-04-03
Abstract
Abstract A method of manufacturing a semiconductor device having a resistive layer with a low temperature coefficient of resistance. The method comprises the steps of providing a semi-insulating film (6) comprising silicon crystallites embedded in a silicon dioxide matrix, preferably made by chemical vapor decomposition of a mixture of sane (SiH4) and vitrous oxide (N2O). The film is at least partly converted into a resistive layer (2) by implanting ions of arsenic or phosphorus in the film. The film is heated at about 900 DEG C and provided with electrode regions (3, 4).
Inventors
- 👤 Emil Arnold
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-29 02:01
CPC Classifications
H; H10; H10D; H10D1/00; H10D1/40; H10D1/47; Y; Y10; Y10T; Y10T428/00; Y10T428/12; Y10T428/12493; Y10T428/12674
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
104 words
A method of manufacturing a semiconductor device having a resistive layer with a low temperature coefficient of resistance and comprising the steps of providing on a substrate a resistive film comprising silicon, implanting ions in the resistive film and heating said film, characterized in that a semi-insulating film comprising silicon crystallites embedded in a silicon dioxide matrix is provided, that the semi-insulating film is at least in part converted into a resistive layer by implanting ions of the group of arsenic and phosphorus in the film, and that the film is heated to a temperature of about 900°C and is provided with electrode regions.
Claim 2
Independent Claim
104 words
A method of manufacturing a semiconductor device having a resistive layer with a low temperature coefficient of resistance and comprising the steps of providing on a substrate a resistive film comprising silicon, implanting ions in the resistive film and heating said film, characterized in that a semi-insulating film comprising silicon crystallites embedded in a silicon dioxide matrix is provided, that the semi-insulating film is at least in part converted into a resistive layer by implanting ions of the group of arsenic and phosphorus in the film, and that the film is heated to a temperature of about 900°C and is provided with electrode regions.
Claim 3
Dependent Claim
32 words
A method according to Claim 1, characterized in that the semi-insulating film is provided by chemical vapor decomposition of a mixture of silane (SiH 4 ) and vitrous oxide (N 2 O).
Claim 4
Dependent Claim
26 words
A method according to Claim 1 or 2, characterized in that the resulting resistive layer has a resistivity between 10 7 ohm/square and 10 12 ohm/square.
Claim 5
Independent Claim
21 words
A method according to anyone of Claims 1-3, wherein said resistive layer is produced throughout the thickness of said semi-insulating film.
Claim 6
Dependent Claim
29 words
A method according to Claim 4, wherein said ion implantation is carried out by a three-stage ion implantation technique to achieve uniform resistance throughout the thickness of said film.
Claim 7
Dependent Claim
16 words
A method according to Claim 5, wherein said film has a thickness of about 100 nm.
Claim 8
Dependent Claim
18 words
A method according to Claim 4, wherein said electrode regions are formed on opposite sides of said film.
Claim 9
Dependent Claim
51 words
A method according to Claim 4, wherein said film is formed on a silicon substrate, one of said electrode regions is formed of a doped region between said film and said silicon substrate, and another electrode region is formed as a metal layer on said film opposite to said doped region.
Claim 10
Independent Claim
27 words
A method according to any one of Claims 1-3, wherein said resistive layer is produced as a single layer formed into one surface of said semi-insulating film.
Claim 11
Dependent Claim
25 words
A semiconductor device having a high resistivity film with a low temperature coefficient of resistance manufactured by the method according to anyone of Claims 1-9.
References Cited (Backward Citations)
No citation records indexed.
USPTO Annuity & Maintenance Windows
Maintenance schedule is calculated for granted US utility patents.