Patent EP0122398A2 successfully refreshed from Google Patents.
EP0122398A2
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Pattern forming material and method for forming pattern therewith
Assignee: NTT Inc
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Filing: 1984-02-17
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Granted: —
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Expires: 2004-02-17
Abstract
Abstract A pattern forming material contains a siloxane polymer having the general formula: [wherein R, R' and R" are the same or different and are respectively one member selected from hydrogen, an alkyl group or a phenyl group; X is one member selected from fluorine, chlorine, bromine, iodine and a -CHzY group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and I, m and n are respectively 0 or a positive integer, I and m not being simultaneously 0]. The material has a high sensitivity to high-energy radiation, a high contrast, and an excellent resistance to reactive ion etching under oxygen gas. The material is conveniently used as a negative resist for forming a submicron pattern having a high aspect ratio.
Inventors
- 👤 Masao Morita
- 👤 Akinobu Tanaka
- 👤 Saburo Imamura
- 👤 Toshiaki Tamamura
- 👤 Osamu Kogure
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 13:52
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/094; C; C08; C08G; C08G77/00; C08G77/04; C08G77/20; C08G77/22; C08G77/24; G03F7/075; G03F7/0757
Claims Analysis
Total Claims: 15
Claim 1
Independent Claim
105 words
A pattern forming material containing a siloxane polymer having the general formula: [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a -CH 2 Y group (wherein Y is one member selected from the group consisting of chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and ℓ, m and n are respectively 0 or a positive integer, £ and m not being simultaneously 0].
Claim 2
Dependent Claim
105 words
A pattern forming material containing a siloxane polymer having the general formula: [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a -CH 2 Y group (wherein Y is one member selected from the group consisting of chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and ℓ, m and n are respectively 0 or a positive integer, £ and m not being simultaneously 0].
Claim 3
Dependent Claim
23 words
A material according to claim 1, characterized in that a phenyl group content is not less than 75 % of side chain residues.
Claim 4
Dependent Claim
18 words
A material according to claim 1, characterized in that X is -CH 2 Ct in the general formula.
Claim 5
Independent Claim
153 words
A method for forming a pattern, comprising the steps of forming a high-energy radiation-sensitive material film on a substrate; selectively irradiating a surface of the high-energy radiation-sensitive material film with a high-energy beam; and removing by developing a non-irradiated portion of the high-energy radiation-sensitive material film with a developing solvent, wherein the high-energy radiation-sensitive material film comprises a siloxane polymer having a general formula: [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a -CH 2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and i, m and n are respectively 0 or a positive integer, £ and m not being simultaneously 0].
Claim 6
Independent Claim
153 words
A method for forming a pattern, comprising the steps of forming a high-energy radiation-sensitive material film on a substrate; selectively irradiating a surface of the high-energy radiation-sensitive material film with a high-energy beam; and removing by developing a non-irradiated portion of the high-energy radiation-sensitive material film with a developing solvent, wherein the high-energy radiation-sensitive material film comprises a siloxane polymer having a general formula: [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a -CH 2 Y group (wherein Y is one member selected from chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and i, m and n are respectively 0 or a positive integer, £ and m not being simultaneously 0].
Claim 7
Independent Claim
203 words
A method for forming a pattern, comprising the steps of forming an organic polymeric material layer on a substrate; forming a high-energy ratiation-sensitive material film thereover; selectively irradiating a surface of the high-energy radiation-sensitive material film; removing a non-irradiated portion of the high-energy radiation-sensitive material film using a developing solvent; and etching a portion of the organic polymeric material layer not covered with a remaining, irradiated portion of the high-energy radiation-sensitive material film by dry etching using oxgen and the remaining, irradiated portion as a mask, thereby forming a pattern of the organic polymeric material layer, wherein the high-energy radiaiton sensitive material film comprises a siloxane having a general formula: [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a -CH 2 Y group (wherein Y is one member selected from the group consisting of chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and £, m and n are respectively 0 or a positive integer, k and m not being simultaneously 0].
Claim 8
Independent Claim
203 words
A method for forming a pattern, comprising the steps of forming an organic polymeric material layer on a substrate; forming a high-energy ratiation-sensitive material film thereover; selectively irradiating a surface of the high-energy radiation-sensitive material film; removing a non-irradiated portion of the high-energy radiation-sensitive material film using a developing solvent; and etching a portion of the organic polymeric material layer not covered with a remaining, irradiated portion of the high-energy radiation-sensitive material film by dry etching using oxgen and the remaining, irradiated portion as a mask, thereby forming a pattern of the organic polymeric material layer, wherein the high-energy radiaiton sensitive material film comprises a siloxane having a general formula: [wherein R, R' and R" are the same or different and are respectively one member selected from the group consisting of hydrogen, an alkyl group and a phenyl group; X is one member selected from the group consisting of fluorine, chlorine, bromine, iodine and a -CH 2 Y group (wherein Y is one member selected from the group consisting of chlorine, fluorine, bromine, iodine, an acryloyloxy group, a methacryloyloxy group, and a cinnamoyloxy group); and £, m and n are respectively 0 or a positive integer, k and m not being simultaneously 0].
Claim 9
Dependent Claim
21 words
A method according to claim 4, wherein a phenyl group content is not less than 75 % of side chain residues.
Claim 10
Dependent Claim
16 words
A method according to claim 4, wherein X is -CH 2 Cℓ in the general formula.
Claim 11
Dependent Claim
21 words
A method according to claim 5, wherein a phenyl group content is not less than 75 % of side chain residues.
Claim 12
Dependent Claim
16 words
A method according to claim 5, wherein X is -CH 2 Cℓ in the general formula.
Claim 13
Dependent Claim
67 words
A material according to claim 1, wherein the siloxane polymer is prepared by reacting one member selected from the group consisting of a phenyl group-containing siloxane oligomer and a phenyl group-containing polysiloxane having a low molecular weight with one member selected from the group consisting of X in the general formula and a compound containing X in the general formula under the presence of a Friedel-Crafts catalyst.
Claim 14
Dependent Claim
50 words
A material according to claim 3, wherein the siloxane polymer is prepared by reacting one member selected from the group consisting of a phenyl group-containing siloxane oligomer and a phenyl group-containing polysiloxane having a low molecular weight with a chloromethyl lower alkyl ether under the presence of a Friedel-crafts catalyst.
Claim 15
Dependent Claim
28 words
A material according to claim 11, wherein the chloromethyl lower alkyl ether is one member selected from the group consisting of chloromethyl methyl ether and chloromethyl ethyl ether.
References Cited (Backward Citations)
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