Apparatus for and method of continuously depositing a highly conductive, highly transmissive film

Claim 3

A method as in claim 1, which includes the further step of replenishing the oxygen gas as it reacts with the metallic material, whereby a substantially constant partial pressure of oxygen is maintained in the chamber.

Claim 4

A method as in claim 1, wherein the metallic material has a melting point of less than 450°C.

Claim 5

A method as in claim 2, wherein the metallic material is selected from the group consisting of indium, tin, cadmium, zinc and mixtures thereof.

Claim 6

A method as in claim 1, including the further step of heating the substrate to 150 - 400°C.

Claim 7

A method as in claim 5, wherein the substrate is heated to a temperature of 150 - 300°C, and an indium-tin compound is evaporated in the chamber; whereby indium-tin oxide is continuously deposited onto the surface of the moving substrate.

Claim 8

A method as in claim 6, wherein the electromagnetic energy is provided by an r.f. power source adapted to energize a cathode disposed within said zone, said cathode adapted to be energized to a frequency of about 13.56 megaherz.

Claim 9

A method as in claim 6, wherein the pressure within the chamber is maintained at about 10-2 to 10 4 torr.

Claim 10

A method as in claim 1, wherein the metallic. material is zinc and the substrate is maintained at room temperature.

Claim 11

A method as in claim 5, wherein the metallic material is indium and the substrate is heated to a temperature of less than about 300°C.

Claim 12

A method as in claim 1, wherein the substrate includes a semiconductor body atop of which the metallic oxide film is deposited.

Claim 13

A method as in claim 11, wherein the semiconductor body comprise a plurality of amorphous semiconductor layers.

Claim 14

Apparatus for continuously depositing a light transmissive, electrically conductive film onto a substrate, said apparatus including: a vacuum chamber; heating means in the chamber; a source of metallic material operatively disposed for evaporation by the heating means; a substrate spaced from the source of metallic material; a vapor zone formed between the source of metallic material and the substrate; means for introducing oxygen into the vapor zone; and means for introducing electromagnetic energy into the zone to develop an ionized plasma from the oxygen gas and the metallic atoms in the vapor zone; the improvement comprising, in combination: means for continuously advancing the substrate through the apparatus; and, means for continuously replenishing the metallic material as it evaporates, whereby the apparatus is adapted to continuously deposit a metal oxide film onto the advancing substrate.

Claim 15

Apparatus for continuously depositing a light transmissive, electrically conductive film onto a substrate, said apparatus including: a vacuum chamber; heating means in the chamber; a source of metallic material operatively disposed for evaporation by the heating means; a substrate spaced from the source of metallic material; a vapor zone formed between the source of metallic material and the substrate; means for introducing oxygen into the vapor zone; and means for introducing electromagnetic energy into the zone to develop an ionized plasma from the oxygen gas and the metallic atoms in the vapor zone; the improvement comprising, in combination: means for continuously advancing the substrate through the apparatus; and, means for continuously replenishing the metallic material as it evaporates, whereby the apparatus is adapted to continuously deposit a metal oxide film onto the advancing substrate.

Claim 16

Apparatus as in Claim 13, further including means for replenishing the oxygen as it reacts with the metallic material, whereby a substantially constant partial pressure of oxygen is maintained in the chamber.

Claim 17

Apparatus as in claim 13, wherein means for heating the substrate is provided.

Claim 18

Apparatus as in claim 13, wherein further including a plurality of spaced sources of metallic material adapted to be evaporated by the heating means.

Claim 19

Apparatus as in claim 13, wherein the means for heating the source of metallic material is a resistance heater.

Claim 20

Apparatus as in claim 13, wherein the means for heating the source of metallic material is an induction heater.

Claim 21

Apparatus as in claim 13, wherein the means for heating the source of metallic material is an electron beam.

Claim 22

Apparatus as in claim 13, wherein the substrate comprises an elongated web of material, and the means for continuously advancing the substrate through the apparatus comprises a plurality of rollers and drive means associated therewith.

Claim 23

Apparatus as in claim 13, wherein the means for replenishing the metallic material comprises, a storage hopper in which the material is stored and a conduit for conveying the material from the hopper to the source.

Claim 24

Apparatus as in claim 13 wherein the metallic material is an elongated relatively thin wire, and the means for replenishing the metallic material comprises; a spool, about which the metallic wire is coiled, and feed means adapted to advance the metallic wire from the spool to the source, whereby the metallic material may be continuously replenished.

Claim 25

Apparatus as in claim 13, wherein the energy means includes a cathode plate, said cathode platemoving cathodeat least one opening through which the vaporized atoms of the metallic material are adapted to pass to the vapor zone.

Claim 26

Apparatus as in claim 13, including means for maintaining the chamber at a pressure of 10 2 to 10-5 torr.

Claim 27

Apparatus as in claim 13, wherein the metallic material is selected from the group consisting of indium, cadmium, zinc and mixture thereof.

Claim 28

Apparatus as in claim 26, wherein the substrate includes a semiconductor body on the surface of which the metallic oxide film is adapted to be deposited.

Claim 29

Apparatus as in claim 13, wherein the semiconductor body comprises a plurality of amorphous semiconductor layers.

Claim 30

Apparatus as in claim 25, wherein the substrate is formed from stainless steel.

Claim 31

Apparatus as in claim 25, wherein the substrate is formed from a synthetic plastic resin.

Claim 32

Apparatus as in claim 25, wherein the substrate is formed from a glass-like material.