Patent EP0115390A2 successfully refreshed from Google Patents.
EP0115390A2
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Semiconductor lasers
Assignee: Xerox Corp
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Filing: 1984-01-13
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Granted: —
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Expires: 2004-01-13
Abstract
Abstract A semiconductor laser has a combination index- and gain-guiding region in the optical cavity (18) established between end facets (27, 28) of the laser.
Inventors
- 👤 Donald R. Scifres
- 👤 William Streifer
- 👤 Robert D. Burnham
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 13:00
CPC Classifications
H; H01; H01S; H01S5/00; H01S5/10; B; B82; B82Y; B82Y20/00; H01S5/04; H01S5/042; H01S5/0425; H01S5/04254; H01S5/16; H01S2301/00; H01S2301/18; H01S2301/185; H01S5/1053; H01S5/1064; H01S5/20; H01S5/204; H01S5/22; H01S5/223; H01S5/2232; H01S5/2234; H01S5/30; H01S5/34; H01S5/343; H01S5/34313; H01S5/3432; H01S5/40; H01S5/4025; H01S5/4031
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
70 words
A semiconductor laser comprising a plurality of contiguous semiconductor layers deposited on a substrate, one or more of said layers forming an active region (16), permitting carrier recombination and light generation in at least one portion thereof and supporting radiation propogating under lasing conditions in an optical cavity (18) established between end facets (27, 28) of the laser, said active region characterized by having a combination index- and gain-guiding region.
Claim 2
Dependent Claim
70 words
A semiconductor laser comprising a plurality of contiguous semiconductor layers deposited on a substrate, one or more of said layers forming an active region (16), permitting carrier recombination and light generation in at least one portion thereof and supporting radiation propogating under lasing conditions in an optical cavity (18) established between end facets (27, 28) of the laser, said active region characterized by having a combination index- and gain-guiding region.
Claim 3
Dependent Claim
32 words
The semiconductor laser of claim 1, wherein said combination region includes a central gain-guiding region, and an index-guiding region between said central gain-guiding region and one or both of said end facets.
Claim 4
Dependent Claim
32 words
The semiconductor laser of claim 1, wherein said combination region includes a central index-guiding region, and a gain-guiding region between said central index-guiding region and one or both of said end facets.
Claim 5
Dependent Claim
30 words
The semiconductor laser of claim 1, including a plurality of spatially parallel optical cavities integral with said substrate to form a plurality of spatially disposed combination index- and gain-guiding regions.
Claim 6
Dependent Claim
26 words
The semiconductor laser of claim 4, wherein the gain-guiding regions of said array are commonly optically coupled to provide; phase-locked emissions from said spatially-parallel optical cavities.
Claim 7
Dependent Claim
36 words
The semiconductor laser of claim 4 or 5, wherein said combination regions each include a common central gain-guiding region and spatially- disposed index-guiding regions between said common central gain-guiding region and each of said end facets.
Claim 8
Dependent Claim
34 words
The semiconductor laser of claim 4 or 5, wherein said combination regions each include a central index-guiding region and a common gain-guiding region between said central index-guiding region and each of said end facets.
Claim 9
Dependent Claim
32 words
The semiconductor laser of any preceding claim, wherein the regions of said active region are thinner near said end facets so as to function as a partially-transparent waveguide for the propogating radiation.
Claim 10
Dependent Claim
26 words
The semiconductor laser of claim 8, including means for confining current to the or each combination region substantially in alignment with the or each optical cavity.
Claim 11
Dependent Claim
19 words
The semiconductor laser of claim 9, wherein said current- confinement means does not extend above said transparent waveguide regions.
Claim 12
Dependent Claim
28 words
The semiconductor laser of any preceding claim, wherein the or each combination region comprises a plurality of alternating index- (124) and gain-guiding (122) regions between said end facets.
References Cited (Backward Citations)
No citation records indexed.
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