EP0113458A1
Expired / Lapsed
EP
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MIS semiconductor integrated circuit
Assignee: Toshiba Corp
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Filing: 1983-12-13
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Granted: —
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Expires: 2003-12-13
Abstract
Abstract A MIS semiconductor integrated circuit is one which contains an internal circuit (30). In the internal circuit (30), an externally supplied power source voltage (V cc ) supplied to a power source voltage terminal (40) is supplied to the voltage input terminal (22) of a voltage dropping circuit (24). The voltage at a voltage output terminal of the voltage dropping circuit (24) is detected by a voltage detecting circuit (26) containing an inverting circuit with a predetermined threshold voltage. The voltage dropping circuit (24) is switch-controlled by applying the detected voltage to the control terminal (21) thereof. The voltage output terminal (23) of the voltage dropping circuit (24) provides an internal power source voltage (V DD ) which is formed by dropping the externally supplied power source voltage (V cc ). An internal circuit (30) containing MOSFETs with an effective channel length of 1 wm or less is driven by the internal power source voltage (V DD ).
Inventors
- 👤 Yukimasa Uchida
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 01:15
CPC Classifications
G; G05; G05F; G05F1/00; G05F1/10; G05F1/46; G05F1/462; G05F1/465; H; H10; H10D; H10D89/00; H10D89/211; H10D89/213
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
148 words
A MIS semiconductor integrated circuit comprising: a power source voltage terminal (40) for being externally supplied with a power source voltage (VCC); an internal power source circuit (20) including a voltage dropping means (24) having a control terminal (21), a voltage input terminal (22) and a voltage output terminal (23), said voltage input terminal being for supply with a voltage (V CC ) at said power source voltage terminal (40); a detecting means (26, 29) which detects the voltage (V DD ) at said voltage output terminal (23) of said voltage dropping means (24) at a predetermined threshold voltage level, and supplies a signal related to this detection to said voltage dropping means (24); and an internal circuit (30) which is operable at the voltage (V DD ) level of said internal power source circuit (20), said internal circuit (30) containing MISFETs with a predetermined effective channel length.
Claim 2
Dependent Claim
148 words
A MIS semiconductor integrated circuit comprising: a power source voltage terminal (40) for being externally supplied with a power source voltage (VCC); an internal power source circuit (20) including a voltage dropping means (24) having a control terminal (21), a voltage input terminal (22) and a voltage output terminal (23), said voltage input terminal being for supply with a voltage (V CC ) at said power source voltage terminal (40); a detecting means (26, 29) which detects the voltage (V DD ) at said voltage output terminal (23) of said voltage dropping means (24) at a predetermined threshold voltage level, and supplies a signal related to this detection to said voltage dropping means (24); and an internal circuit (30) which is operable at the voltage (V DD ) level of said internal power source circuit (20), said internal circuit (30) containing MISFETs with a predetermined effective channel length.
Claim 3
Dependent Claim
21 words
A MIS semiconductor integrated circuit according to claim 1, characterized in that said voltage dropping means (24) is a switching element.
Claim 4
Dependent Claim
20 words
A MIS semiconductor integrated circuit according to claim 2, characterized in that said switching element is a MISFET (101, 106).
Claim 5
Dependent Claim
20 words
A MIS semiconductor integrated circuit according to claim 2, characterized in that switching element is a bipolar transistor (110, 111).
Claim 6
Dependent Claim
29 words
A MIS semiconductor integrated circuit according to claim 1, characterized in that said voltage detecting circuit (26) includes an inverting circuit (104, 109, 114) with a predetermined threshold voltage.
Claim 7
Dependent Claim
38 words
A MIS semiconductor integrated circuit according to claim 5, characterized in that a voltage dropping circuit (27) is provided between the voltage output terminal (23) of said voltage dropping means (24) and said inverting circuit (104, 109, 114).
Claim 8
Dependent Claim
53 words
A MIS semiconductor integrated circuit according to claim 1, characterized in that said detecting means (29) is a differential amplifier (125) which compares the voltage (V DD ) at the voltage output terminal (23) with a constant voltage (V R ), to produce an output signal depending on the results of this comparison.
Claim 9
Dependent Claim
28 words
A MIS semiconductor integrated circuit according to claim 7, characterized in that said constant voltage (V R ) is produced by using a plurality of series-connected diodes (123).
Claim 10
Dependent Claim
23 words
A MIS semiconductor integrated circuit according to claim 8, characterized in that programmable fuses (126) are connected in parallel to said fuses (123).
Claim 11
Dependent Claim
30 words
A MIS semiconductor integrated circuit according to claim 1, characterized in that the effective channel length of the MISFETs contained in said internal circuit (30) is 1 µm or less.
References Cited (Backward Citations)
EP0063483A2
Cited
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