Abstract A substrate for a semiconductor element, particularly, a high-power semiconductor element, having a high thermal conductivity and a coefficient of thermal expansion approximating that of common semiconductor materials. The substrate includes a metal base composed of a W alloy containing Cu in an amount of 5 to 20 wt % with a thermal expansion coefficient of 4.5 to 7.5 x 10<-><6> cm/cm degree C and a thermal conductivity of 0.4 cal/cm sec degree C or more or Mo alloy containing Cu in an amount of 5 to 30 wt % with a thermal expansion coefficient of 5.0 to 8.0 x 10<6> cm/cm degree C and a thermal conductivity of at least 0.38 cal/cm sec degree C. The metal base is coated with an electrically insulating inorganic material to a thickness of 0.1 to 20 mu m.
A substrate for supporting a semiconductor element comprising: a metal base of a material selected from the group consisting of (1) W alloy containing Cu in an amount of 5 to 20 wt % having a thermal expansion coefficient in a range of 4.5 to 7.5 x 10- 6 cm/cm degree C and a thermal conductivity of 0.4 cal/cm sec degree C, and (2) Mo alloy containing Cu in an amount of 5 to 30 wt % with a thermal expansion coefficient of 5.0 to 8.0 x 10- 6 cm/cm degree C and a thermal conductivity of at least 0.38 cal/cm sec degree C; and a coating of an electrically insulating inorganic material on said metal base having a thickness in a range of 0.1 to 20 pm.
Claim 2
Dependent Claim
128 words
A substrate for supporting a semiconductor element comprising: a metal base of a material selected from the group consisting of (1) W alloy containing Cu in an amount of 5 to 20 wt % having a thermal expansion coefficient in a range of 4.5 to 7.5 x 10- 6 cm/cm degree C and a thermal conductivity of 0.4 cal/cm sec degree C, and (2) Mo alloy containing Cu in an amount of 5 to 30 wt % with a thermal expansion coefficient of 5.0 to 8.0 x 10- 6 cm/cm degree C and a thermal conductivity of at least 0.38 cal/cm sec degree C; and a coating of an electrically insulating inorganic material on said metal base having a thickness in a range of 0.1 to 20 pm.
Claim 3
Dependent Claim
16 words
The substrate of claim 1, wherein said metal base is produced by a powder sintering process.
Claim 4
Dependent Claim
17 words
The substrate of claim 2, wherein, in said metal base, Cu exists uniformly with W or Mo.
Claim 5
Dependent Claim
40 words
The substrate of claim 1, wherein said coating layer is selected from the group consisting of BN, A1 2 0 3 , Si 3 N 4 , Y 2 O 3 , 2MgO·SiO 2 , diamond, and laminated combinations thereof.
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