Patent EP0112773A2 successfully refreshed from Google Patents.
EP0112773A2
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Buried Schottky clamped transistor
Assignee: Fairchild Semiconductor Corp
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Filing: 1983-12-20
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Granted: —
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Expires: 2003-12-20
Abstract
Abstract A buried Schottky clamped transistor is described in which the Schottky diode comprises a region of metal silicide 24 in the epitaxial layer 15 adjacent the transistor. The structure includes an electrically isolated region of N type epitaxial silicon 15 having an upper surface, a region of metal silicide 24 formed in the epitaxial silicon 15 adjacent the upper surface, an emitter region 33 of first conductivity type also formed in the epitaxial silicon adjacent the upper surface, base region 29 of opposite conductivity type adjacent the upper surface which separates the emitter 33 from the metal silicide 24, and metal connections 37, 38 and 39 for making electrical connections to each of the regions of metal silicide 24, the emitter region 33, and the epitaxial silicon 15.
Inventors
- 👤 Ashok K. Kapoor
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-28 16:40
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/60; H10D84/611; H10D84/613; H10D84/617; H10D84/01; H10D84/0112; H10D84/02; H10D84/03; H10D84/038
Claims Analysis
Total Claims: 17
Claim 1
Independent Claim
68 words
An integrated circuit structure comprising: a first region of semiconductor material having an upper surface; a transistor having a base, an emitter and a collector formed in the first region of semiconductor material; and characterized by a second region of metal silicide formed in the first region of semiconductor material adjacent the upper surface and in electrical contact with at least one of the base, emitter and collector.
Claim 2
Dependent Claim
68 words
An integrated circuit structure comprising: a first region of semiconductor material having an upper surface; a transistor having a base, an emitter and a collector formed in the first region of semiconductor material; and characterized by a second region of metal silicide formed in the first region of semiconductor material adjacent the upper surface and in electrical contact with at least one of the base, emitter and collector.
Claim 3
Dependent Claim
24 words
A structure-as in claim 1 characterized in that the second region of metal silicide is in electrical contact with the base and the collector.
Claim 4
Dependent Claim
36 words
A structure as in claim 2 further comprising an emitter contact and a collector contact, and characterized by a base contact electrically connected to the base of the transistor through the second region of metal silicide.
Claim 5
Dependent Claim
69 words
A structure as in any one of claims 1, 2 or 3 characterized in that: said first region of semiconductor material is electrically isolated and of first conductivity type; and said transistor comprises the first region, a third region of second conductivity type in the first region contiguous to the second region, and a fourth region of first conductivity type separated from the second region by the third region.
Claim 6
Dependent Claim
16 words
A structure as in claim 4 characterized in that the second region comprises a Schottky diode.
Claim 7
Dependent Claim
33 words
A structure as in claim 5 characterized in that the fourth region comprises the emitter, the third region comprises the base, and the first region of electrically isolated semiconductor material comprises the collector.
Claim 8
Dependent Claim
57 words
A structure as in claim 6 characterized in that: said first region comprises an epitaxial layer; and said first region is electrically isolated by an underlying buried layer of the first conductivity type disposed in an opposite conductivity type substrate, and further electrically isolated by a region of oxidized semiconductor material beneath which said buried layer extends.
Claim 9
Dependent Claim
19 words
A structure as in any one of claims 1 - 7 characterized in that the second region comprises tantalum-silicide.
Claim 10
Dependent Claim
15 words
A structure as in claim 8 characterized in that said first conductivity type is N.
Claim 11
Dependent Claim
66 words
A process for fabricating an integrated circuit structure characterized by: introducing into a first region of semiconductor material of first conductivity type a second region of metal silicide; forming a third region of opposite conductivity type in the first region contiguous to the second region; and forming a fourth region of first conductivity type in the third region, and not in contact with the second region.
Claim 12
Dependent Claim
66 words
A process for fabricating an integrated circuit structure characterized by: introducing into a first region of semiconductor material of first conductivity type a second region of metal silicide; forming a third region of opposite conductivity type in the first region contiguous to the second region; and forming a fourth region of first conductivity type in the third region, and not in contact with the second region.
Claim 13
Dependent Claim
34 words
A process as in claim 10 characterized in that the step of introducing comprises: depositing the second region on a surface of the first region; and diffusing the second region into the first region.
Claim 14
Dependent Claim
26 words
A process as in claim 10 or claim 11 characterized by the step of providing electrical connections to each of the first, second and fourth regions.
Claim 15
Dependent Claim
20 words
A process as in claim 12 characterized in that the first region comprises a portion of an epitaxially deposited layer.
Claim 16
Dependent Claim
14 words
A process as in claim 13 characterized in that the metal silicide comprises tantalum-silicide.
Claim 17
Dependent Claim
15 words
A process as in claim 14 characterized in that the step of depositing comprises sputtering.
References Cited (Backward Citations)
No citation records indexed.
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