Patent EP0111823A2 successfully refreshed from Google Patents.
EP0111823A2
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EP
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Compressively stressed titanium metallurgy for contacting passivated semiconductor devices
Assignee: International Business Machines Corp
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Filing: 1983-12-06
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Granted: —
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Expires: 2003-12-06
Abstract
Abstract Contact metallurgy is disclosed for passivated semiconductor devices. The metallurgy comprises a compressively stressed, oxygen-containing titanium underlayer (5) covered by a solder-bondable layer (6) extending through via holes in dielectric material (4) on the semiconductor device. The solder bondable layer is either nickel or ruthenium, where lower current densities are encountered or a composite of layers of copper, titanium, copper and gold for higher current densities.
Inventors
- 👤 Somnath Bhattacharya
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-03 18:53
CPC Classifications
H; H10; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48; B; B23; B23K; B23K35/00; B23K35/001; H10W72/00; H10W72/90; H10W72/20; H10W72/251; H10W72/29; H10W72/921; H10W72/923; H10W72/941; H10W72/942
Claims Analysis
Total Claims: 11
Claim 1
Independent Claim
95 words
Contact metallurgy for an integrated semiconductor substrate having circuit elements (3) therein, comprising: a dielectric coating (4) on said substrate having an aperture therethrough for electrical connection to a said element (3) in said substrate; a contact pad comprising a first layer of titanium, and a second layer of solder bondable contact metallurgy concentrically formed on said first layer, characterized by said first layer (5; 10) consisting of compressively stressed titanium.covering said aperture and having peripheral portions extending on and bonded to said coating externally of said aperture, with said titanium having oxygen dispersed therein.
Claim 2
Dependent Claim
95 words
Contact metallurgy for an integrated semiconductor substrate having circuit elements (3) therein, comprising: a dielectric coating (4) on said substrate having an aperture therethrough for electrical connection to a said element (3) in said substrate; a contact pad comprising a first layer of titanium, and a second layer of solder bondable contact metallurgy concentrically formed on said first layer, characterized by said first layer (5; 10) consisting of compressively stressed titanium.covering said aperture and having peripheral portions extending on and bonded to said coating externally of said aperture, with said titanium having oxygen dispersed therein.
Claim 3
Dependent Claim
24 words
The structure of claim 1 wherein the thickness of said titanium layer (5; 10) is in the range of 0.2 to 2 U m.
Claim 4
Dependent Claim
15 words
The structure of claim 1 or 2 including a solder mound (1) on said pad.
Claim 5
Dependent Claim
27 words
The structure of claim 1, 2 or 3 wherein said dielectric coating (4) is selected from the group of glass, quartz, silicon dioxide and poly- mide compositions.
Claim 6
Dependent Claim
18 words
The structure of a previous claim wherein said second layer (6) comprises a layer of nickel or ruthenium.
Claim 7
Dependent Claim
24 words
The structure of any of claims 1-4 wherein said second layer comprises sequential films of copper (11), titanium (12), copper (13) and gold (14).
Claim 8
Dependent Claim
24 words
The structure of claim 5 wherein said second layer (6) is nickel and the thickness ratio of the Ti and Ni layers is 2:1.
Claim 9
Dependent Claim
24 words
The structure of claim 5 wherein said second layer (6) is ruthenium and the thickness ratio of the Ti and Ru layers is 3:1.
Claim 10
Dependent Claim
26 words
The structure of claim 6 wherein the thicknesses of said films are in the ranges of 1-3 µm, 0.2-0.5 µm, 0.1-0.3 µm and 0.1 µm, respectively.
Claim 11
Dependent Claim
45 words
The structure of a previous claim wherein the oxygen is dispersed in said compressively stressed titanium layer by evaporation of titanium in an oxygen-containing ambient at a partial pressure of between 6.7 and 0.7 mPa at a temperature in the range of 100°C to 300°C.
References Cited (Backward Citations)
No citation records indexed.
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