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Patent EP0111247A2 successfully refreshed from Google Patents.
EP0111247A2
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Photovoltaic device
Assignee: Kanegafuchi Chemical Industry Co Ltd
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Filing: 1983-11-30
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Granted: —
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Expires: 2003-11-30
Abstract
Abstract A PIN junction photovoltaic device using a P-type or N-type semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10 -8 (Ω.cm) -1 at 20°C. in the layer positioned on the opposite side to incidence of light. The photovoltaic device has an improved efficiency.
Inventors
- 👤 Yoshihisa Tawada
- 👤 Kazunori Tsuge
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 08:04
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F10/00; H10F10/10; H10F10/17; H10F77/40; H10F77/42; H10F77/48; Y; Y02; Y02E; Y02E10/00; Y02E10/50; Y02E10/52; Y02E10/547; Y02E10/548
Claims Analysis
Total Claims: 16
Claim 1
Independent Claim
62 words
In a PIN junction photovoltaic device having a construction of electrode/PIN/electrode, said photovoltaic device being improved in that the P or N layer positioned on the opposite side to incidence of light is a semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10- 8 (Ω.cm) -1 at 20°C.
Claim 2
Dependent Claim
62 words
In a PIN junction photovoltaic device having a construction of electrode/PIN/electrode, said photovoltaic device being improved in that the P or N layer positioned on the opposite side to incidence of light is a semiconductor having an optical band gap of not less than about 1.8 eV and a dark conductivity of not less than about 10- 8 (Ω.cm) -1 at 20°C.
Claim 3
Dependent Claim
28 words
The photovoltaic device of Claim 1, wherein a back side electrode positioned on the opposite side to incidence of light has a reflectivity of not less than 70%.
Claim 4
Dependent Claim
26 words
The photovoltaic device of Claim 2, wherein said back side electrode is a metal selected from the group consisting of Ag, Al, Ti-Ag, Ni and Cr.
Claim 5
Dependent Claim
20 words
The photovoltaic device of Claim 1, wherein a metal oxide is interposed between the back side electrode and the semiconductor.
Claim 6
Dependent Claim
21 words
The photovoltaic device of Claim 4, wherein said metal oxide has a light transmission of not less than about 80 %.
Claim 7
Dependent Claim
42 words
The photovoltaic device of Claim 4, wherein said metal oxide is a layer of a conductive metal oxide selected from the group consisting of Sn0 2 , In 2 O 3 and indium-tin-oxide or a combination of at least two said layers.
Claim 8
Dependent Claim
23 words
The photovoltaic device of Claim 4, wherein said metal oxide is an insulating metal oxide having a thickness of 10 to 100 angstroms.
Claim 9
Dependent Claim
50 words
The photovoltaic device of Claim 1, wherein the I-layer is an amorphous semiconductor made of a main element selected from the group consisting of Si, Ge and S n or an amorphous semiconductor made of at least two elements selected from the group Si, Ge, Sn, C, N and O.
Claim 10
Dependent Claim
53 words
The photovoltaic device of Claim 8, wherein said I-layer is one prepared by glow discharge decomposition in a mixture of a compound selected from the group consisting of a Si compound, a Ge compound and a Sn compound and a compound selected from the group consisting of a hydrocarbon and a carbon fluoride.
Claim 11
Dependent Claim
27 words
The photovoltaic device of Claim 1, having a multi-layer structure where a plurarity of PIN units each consisting of P, I and N layers are repeatedly provided.
Claim 12
Dependent Claim
24 words
The photovoltaic device of Claim 10, wherein the optical band gaps of the respective I-layers are decreased in order from the light incident side.
Claim 13
Dependent Claim
48 words
The photovoltaic device of Claim 1, wherein the P or N layer positioned on the light incident side is a semiconductor having a dark conductivity of not less than about 10 -8 (Ω·cm) -1 at 20°C. and an optical band gap of not less than about 1.85 eV.
Claim 14
Dependent Claim
48 words
The photovoltaic device of Claim 10, wherein the P or N layer positioned on the light incident side is a semiconductor having a dark conductivity of not less than about 10- 8 (Ω·cm) -1 at 20°C. and an optical band gap of not less than about 1.85 eV.
Claim 15
Dependent Claim
45 words
The photovoltaic device of Claim 1, wherein the P or N layer positioned on the opposite side to incidence of light is an amorphous semiconductor or amorphous semiconductor containing a microcrystalline phase selected from a-SiC:H, a-SiC:F:H, a-SiCN:H, a-SiCN:F:H, a-SiN:H, a-SiN:F:H, a-SiO:H, a-SiO:F:H, a-SiON:H and a-SiON:F:H.
Claim 16
Dependent Claim
13 words
The photovoltaic device of Claim 14, wherein the I-layer is a-Si:H or a-Si:F:H.
References Cited (Backward Citations)
No citation records indexed.
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