Method of manufacturing a semiconductor device comprising a diffusion step

Claim 1

A method of manufacturing a semiconductor device comprising the steps of forming a refractory metal film on a major surface of a silicon substrate of one conductivity type, reacting said refractory metal film and said silicon substrate with each other to form a refractory metal silicide layer, forming an insulating film so as to cover said silicide layer, removing at least a part of said insulating film on a portion of said silicide layer, supplying an impurity of the opposite conductivity type from the location where said insulating film is at least partially removed to said silicide layer and to diffuse said impurity from said silicide layer into said substrate so as to form a diffused region of said opposite conductivity type at a portion in contact with said silicide layer in said substrate.

Claim 2

A method of manufacturing a semiconductor device comprising the steps of forming a refractory metal film on a major surface of a silicon substrate of one conductivity type, reacting said refractory metal film and said silicon substrate with each other to form a refractory metal silicide layer, forming an insulating film so as to cover said silicide layer, removing at least a part of said insulating film on a portion of said silicide layer, supplying an impurity of the opposite conductivity type from the location where said insulating film is at least partially removed to said silicide layer and to diffuse said impurity from said silicide layer into said substrate so as to form a diffused region of said opposite conductivity type at a portion in contact with said silicide layer in said substrate.

Claim 7

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a silicon substrate; forming a first opening in said first insulating film to expose a predetermined region of the silicon surface; forming refractory metal film over said region; implanting inactive ions into the interface between said refractory metal film and said silicon surface to mix the interfacial portions of both said refractory metal thin film and silicon substrate; carrying out a heat treatment to react said refractory metal film and silicon with each other at said first opening in said first insulating film to form a refractory metal silicide within said opening in a self-aligned manner; removing the unreacted refractory metal film on said first insulating film; forming a second insulating film on at least said refractory metal silicide; forming a second opening in said second insulating film on a portion of said refractory metal film; introducing a dopant impurity through said second opening and dispersing laterally within said refractory metal silicide; and diffusing said dopant impurity from said refractory metal silicide into said silicon substrate.

Claim 8

A method of manufacturing a semiconductor device comprising the steps of: forming a first insulating film on a silicon substrate; forming a first opening in said first insulating film to expose a predetermined region of the silicon surface; forming refractory metal film over said region; implanting inactive ions into the interface between said refractory metal film and said silicon surface to mix the interfacial portions of both said refractory metal thin film and silicon substrate; carrying out a heat treatment to react said refractory metal film and silicon with each other at said first opening in said first insulating film to form a refractory metal silicide within said opening in a self-aligned manner; removing the unreacted refractory metal film on said first insulating film; forming a second insulating film on at least said refractory metal silicide; forming a second opening in said second insulating film on a portion of said refractory metal film; introducing a dopant impurity through said second opening and dispersing laterally within said refractory metal silicide; and diffusing said dopant impurity from said refractory metal silicide into said silicon substrate.

Claim 9

A method of manufacturing a semiconductor device comprising steps of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer in a predetermined portion in an element- forming region of said silicon substrate adjacent to said field insulating film; forming a wiring layer of polycrystalline electrically-conductive material in contact with said refractory metal silicide so as to extend on said field insulating film; forming an insulating layer to cover both said refractory metal silicide layer and said wiring layer; forming in said insulating layer a hole reaching the surface of a predetermined portion of said wiring layer on said field insulating film; supplying impurites to said refractory metal silicide layer through said first wiring

Claim 10

A method of manufacturing a semiconductor device comprising steps of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer in a predetermined portion in an element- forming region of said silicon substrate adjacent to said field insulating film; forming a wiring layer of polycrystalline electrically-conductive material in contact with said refractory metal silicide so as to extend on said field insulating film; forming an insulating layer to cover both said refractory metal silicide layer and said wiring layer; forming in said insulating layer a hole reaching the surface of a predetermined portion of said wiring layer on said field insulating film; supplying impurites to said refractory metal silicide layer through said first wiring

Claim 15

A method of manufacturing a semiconductor device comprising step of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer on a predetermined portion of an element- forming region of said silicon substrate adjacent to said field insulating film; forming a first insulating film on said silicide layer; opening a first contact hole in said first insulating film on a contact portion of said silicide layer; forming a first wiring layer of polycrystalline electrically-conductive material in contact with said silicide layer through said first contact hole so as to extend on said first insulating film; forming a second insulating film on said first wiring layer; opening a second contact hole in said second insulating film on a contact portion of said first wiring layer; forming a second wiring layer of polycrystalline electrically-conductive material connected to said first wiring layer through said second contact hole and extending on said second insulating film; introducing a dopant impurity from at least a surface portion of said second wiring layer to said silicide layer through said first wiring layer, whereby said impurity is dispersed laterally in said silicide layer and diffused from said silicide layer to said silicon substrate to form a diffused region under said silicide layer in said silicon substrate.

Claim 16

A method of manufacturing a semiconductor device comprising step of: selectively forming a field insulating film on a silicon substrate; forming a refractory metal silicide layer on a predetermined portion of an element- forming region of said silicon substrate adjacent to said field insulating film; forming a first insulating film on said silicide layer; opening a first contact hole in said first insulating film on a contact portion of said silicide layer; forming a first wiring layer of polycrystalline electrically-conductive material in contact with said silicide layer through said first contact hole so as to extend on said first insulating film; forming a second insulating film on said first wiring layer; opening a second contact hole in said second insulating film on a contact portion of said first wiring layer; forming a second wiring layer of polycrystalline electrically-conductive material connected to said first wiring layer through said second contact hole and extending on said second insulating film; introducing a dopant impurity from at least a surface portion of said second wiring layer to said silicide layer through said first wiring layer, whereby said impurity is dispersed laterally in said silicide layer and diffused from said silicide layer to said silicon substrate to form a diffused region under said silicide layer in said silicon substrate.