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EP0107259A2
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Method of fabricating a semiconductor device in which a layer is evaporatively deposited on a semiconductor body
Assignee: Koninklijke Philips NV
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Filing: 1983-10-24
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Granted: —
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Expires: 2003-10-24
Abstract
Abstract Method of fabricating a semiconductor device in which method a layer of an electrically conductive material is evapor deposited on a general plane of a semiconductor chip. The layer is deposited in two steps, initially with an average deposition rate R 1 which is not greater than 1 nm/s. and subsequently with an average deposition rate R 2 which is greater than 2R 1 . Continuity defects such as tunneling, thinning and microcracking in the layer as reduced, while the method nearly achieves the throughput of prior art methods.
Inventors
- 👤 Eliot Kent Broadbent
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 02:43
CPC Classifications
H; H10; H10P; H10P14/00; H10P14/40; H10P14/412; C; C23; C23C; C23C14/00; C23C14/22; C23C14/24; H10P14/42; H10P14/44; H10W; H10W20/00; H10W20/01; H10W20/031; H10W20/062
Claims Analysis
Total Claims: 5
Claim 1
Independent Claim
145 words
Method of fabricating a semiconductor device in which method a layer of an electrically conductive material, substantially consisting of aluminium is evaporating deposited on a general plane of a semiconductor chip by directing atoms of the material towards the general plane which has step profiles with surface portions that are inclined and surface portions that are non-inclined with respect to the general plane, characterized in that, the layer is deposited in two steps, initially with an average deposition rate R which is not greater than 1 nm/s. on the non-inclined surface portions until the ratio of the average thickness of the material on the non-inclined surface portions to the height of the step profiles is at least 0.25 and subsequently with an average deposition rate R 2 which is greater than 2R 1 to increase the average thickness of the layer to a selected thickness.
Claim 2
Dependent Claim
145 words
Method of fabricating a semiconductor device in which method a layer of an electrically conductive material, substantially consisting of aluminium is evaporating deposited on a general plane of a semiconductor chip by directing atoms of the material towards the general plane which has step profiles with surface portions that are inclined and surface portions that are non-inclined with respect to the general plane, characterized in that, the layer is deposited in two steps, initially with an average deposition rate R which is not greater than 1 nm/s. on the non-inclined surface portions until the ratio of the average thickness of the material on the non-inclined surface portions to the height of the step profiles is at least 0.25 and subsequently with an average deposition rate R 2 which is greater than 2R 1 to increase the average thickness of the layer to a selected thickness.
Claim 3
Dependent Claim
21 words
Method as in claim 1, characterized in that, R 1 on the non-inclined surface portions is not less than 0.2 nm/s.
Claim 4
Dependent Claim
24 words
Method as in Claim 1, characterized in that R 1 on the non-inclined surface portions is in the range of 0.4 to 0.6 nm/s.
Claim 5
Dependent Claim
32 words
Method as in Claim 1, characterized in that, the ratio of the average thickness of the material on the non-inclined surface portions to the height of the step profiles is about 0.3.
References Cited (Backward Citations)
No citation records indexed.
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