Patent EP0106540A2 successfully refreshed from Google Patents.
EP0106540A2
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Thin film semi-conductor device with enhanced optical absorption properties, and method of making same
Assignee: ExxonMobil Technology and Engineering Co
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Filing: 1983-09-15
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Granted: —
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Expires: 2003-09-15
Abstract
Abstract A thin film semi-conductor device with enhanced optical absorption properties comprises a substrate (10) having a roughened or matte surface and a thin film (12) of semi- conductor material deposited on the roughened or matte surface. The roughened or matte surface is obtained by the action of a jet or stream of abrasive particles on the surface which is to be roughened.
Inventors
- 👤 John Thomas Tiedje
- 👤 Benjamine Abeles
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 20:18
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/16; H10F77/169; H10F77/1692; H10F77/70; H10F77/703; H10F77/707
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
67 words
A method of producing a thin film semi-conductor device with enhanced absorption properties characterized by roughening a surface of a substrate by the action of a jet or stream of abrasive particles and thereafter depositing directly or indirectly on the thus roughened or matte surface of the substrate a thin film of semi-conductor material so that the latter is optically coupled to the roughened or matte surface.
Claim 2
Independent Claim
67 words
A method of producing a thin film semi-conductor device with enhanced absorption properties characterized by roughening a surface of a substrate by the action of a jet or stream of abrasive particles and thereafter depositing directly or indirectly on the thus roughened or matte surface of the substrate a thin film of semi-conductor material so that the latter is optically coupled to the roughened or matte surface.
Claim 3
Dependent Claim
23 words
A method as in claim 1 in which the abrasive particles have a size greater than 1 pm and less than 100 µm.
Claim 4
Dependent Claim
24 words
A method as in claim 1 or claim 2 in which the thin film of semi-conductor is deposited by a non-directional vapour deposition technique.
Claim 5
Dependent Claim
25 words
A method as in claim 3 in which the non-directional vapour deposition technique is selected from sputtering, plasma deposition, chemical vapour deposition and glow discharge.
Claim 6
Independent Claim
49 words
A method as in any one of claims 1 to 4 in which a thin film of a transparent electrical conductor is deposited on the roughened or matte surface of the substrate and the thin film of semi-conductor material is deposited on the thin film of transparent conductor material.
Claim 7
Dependent Claim
22 words
A method as in claim 5 in which an anti- reflective transparent coating is deposited on the thin film of semi-conductor material.
Claim 8
Dependent Claim
47 words
7 A thin film semi-conductor device characterised by: (a) a substrate having at least one rough or matte surface which has substantially no apparent glossiness; and (b) a thin film of semi-conductor material deposited directly or indirectly on said rough or matte surface of - the substrate.
Claim 9
Dependent Claim
47 words
7 A thin film semi-conductor device characterised by: (a) a substrate having at least one rough or matte surface which has substantially no apparent glossiness; and (b) a thin film of semi-conductor material deposited directly or indirectly on said rough or matte surface of - the substrate.
Claim 10
Dependent Claim
20 words
A device as in claim 7 in which the semi- conductor material is an amorphous semi-conductor such as amorphous silicon.
Claim 11
Dependent Claim
29 words
A device as in claim 7 or claim 8 comprising electrode means for the passage of, or application of, an electrical voltage or current to or from the device.
Claim 12
Dependent Claim
59 words
A photovoltaic device as in any one of claims 7 to 9 comprising a thin film of a transparent electrical conductor deposited on the rough or matte surface of the substrate, the thin film of semi-conductor material including at least one junction deposited on the said transparent conductor, and an anti-reflection transparent conductor deposited on the said semi-conductor film.
References Cited (Backward Citations)
No citation records indexed.
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