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Patent EP0106286A2 successfully refreshed from Google Patents.
EP0106286A2
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Solid state image sensor
Assignee: Toshiba Corp
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Filing: 1983-10-07
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Granted: —
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Expires: 2003-10-07
Abstract
Abstract A solid state image sensor transfers signal charges produced in response to optical irradiation to readout means provided at at least one end in the direction of alignment of the transfer electrodes with charge transfer channels (30) located below a transfer electrode array (27) arranged on a semiconductor wafer (20) through an insulating film (32). The solid state image sensor is provided with means for controlling applied voltage comprising voltage sources (37,38) of low and high voltages, multi-phase clock source (36) and switch means (34). During optical irradiation a voltage forms a deep potential well in transfer channels located below either the odd numbered transfer electrodes or the even numbered ones, and forms a potential barrier in the transfer channels located below the other group of electrodes, thereby storing signal charges in the potential well. Further, this applied voltage control means, during signal readout, applies charge transfer multi-phase clock signals from transfer electrodes closest to signal readout means sequentially towards those located apart therefrom.
Inventors
- 👤 Nobuo 506 Higashitotsuka Haitaun 56-1 Suzuki
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-07 14:42
CPC Classifications
H; H10; H10F; H10F39/00; H10F39/10; H10F39/12; H10F39/15; H10F39/153; H04; H04N; H04N25/00; H04N25/70; H04N25/71; H04N25/72
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
217 words
A solid state image sensor (120) characterised in that: charge transfer channels (30a,30b,30c) are formed below an array of a plurality of transfer electrodes (27a to 27k) aligned on a semiconductor wafer (20) through an insulating film (32), the charge transfer channels allowing signal charges, produced as an output of photoelectric converting means responsive to optical irradiation, to be transferred to readout means (22) provided at at least one end in the alignment direction of the transfer electrode array for defining the charge transfer channels to output them therefrom; in that means (140) is provided for controlling applied voltage; in that said control means is operable during optical irradiation, to apply a voltage to form a deep potential well in transfer channels below the electrodes of a first group of electrodes corresponding to either the odd numbered or the even numbered electrodes, and to form a potential barrier in transfer channels located below electrodes constituting the other group of electrodes, thereby to store signal charges in said potential well; and in that said control means. is operable during signal readout by means of said readout means (22) in a light-interrupted condition, to apply charge transfer multi-phase clock signals to transfer charge from transfer electrodes closer to said readout means (22) sequentially towards transfer electrodes located apart therefrom.
Claim 2
Dependent Claim
217 words
A solid state image sensor (120) characterised in that: charge transfer channels (30a,30b,30c) are formed below an array of a plurality of transfer electrodes (27a to 27k) aligned on a semiconductor wafer (20) through an insulating film (32), the charge transfer channels allowing signal charges, produced as an output of photoelectric converting means responsive to optical irradiation, to be transferred to readout means (22) provided at at least one end in the alignment direction of the transfer electrode array for defining the charge transfer channels to output them therefrom; in that means (140) is provided for controlling applied voltage; in that said control means is operable during optical irradiation, to apply a voltage to form a deep potential well in transfer channels below the electrodes of a first group of electrodes corresponding to either the odd numbered or the even numbered electrodes, and to form a potential barrier in transfer channels located below electrodes constituting the other group of electrodes, thereby to store signal charges in said potential well; and in that said control means. is operable during signal readout by means of said readout means (22) in a light-interrupted condition, to apply charge transfer multi-phase clock signals to transfer charge from transfer electrodes closer to said readout means (22) sequentially towards transfer electrodes located apart therefrom.
Claim 3
Dependent Claim
69 words
A solid state image sensor according to claim 1 characterised in that said applied voltage control means (140) comprises: voltage source means (37,38) for supplying voltages thereby to form said deep potential well and potential barrier; multi-phase clock source means (36a to 36d) for supplying transfer clock signals; and electronic switch means (34a to 34k) for switching the voltage fed from said voltage source means and said transfer clocks.
Claim 4
Dependent Claim
19 words
A solid state image sensor according to claim 1 or 2 characterised in that said transfer electrode is transparent.
Claim 5
Dependent Claim
42 words
A solid state image sensor according to any one of claims 1 to 3 characterised in that said readout means (22) is provided at one side in the direction of alignment of the transfer electrode array for defining the charge transfer channels.
Claim 6
Dependent Claim
42 words
A solid state image sensor according to any one of claims 1 to 3 characterised in that said readout means (22a,22b) is provided at both sides in the direction of alignment of the transfer electrode array for defining the charge transfer channels.
Claim 7
Dependent Claim
39 words
A solid state image sensor according to any one of claims 1 to 5 characterised in that said photoelectric converting means comprises a photodiode of P-N junction type, said diode being arranged in the vicinity of said transfer electrodes.
Claim 8
Dependent Claim
26 words
A solid state image sensor according to any one of claims 1 to 6 characterised in that said transfer channel is formed with a buried channel.
Claim 9
Dependent Claim
20 words
An electronic camera (100) characterised by a solid state image sensor (120) according to any one of the preceding claims.
References Cited (Backward Citations)
No citation records indexed.
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