EP0104754A1
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Metal insulator semiconductor device with source region connected to a reference voltage
Assignee: Fujitsu Ltd
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Filing: 1983-08-19
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Granted: —
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Expires: 2003-08-19
Abstract
Abstract A semiconductor device includes a MIS FET comprising a drain (24) and a source (25) region formed in a semiconductor substrate (21). The source region (25) is directly electrically connected to the semiconductor substrate (21). This direct electrical connection may be formed by impregnating metal (29) through the source region (25) and into the substrate (21). Alternatively this direct connection may be formed by a conducting layer (30) directly linking the surface of the source region (25) to the adjacent surface of the substrate (21). This direct connection keeps the potential of the source region (25) at a reference voltage without requiring a wiring line led out from the MIS FET via a contact window and hence occupying a significant area of the semiconductor chip.
Inventors
- 👤 Takehide Shirato
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-02 15:53
CPC Classifications
H; H10; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10D30/00; H10D30/60; H10D64/00; H10D64/20; H10D64/23; H10D64/251
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
67 words
1 . A semiconductor device comprising at least one metal-insulator-semiconductor field effect transistor formed on a semiconductor substrate (21), the field effect traansistor comprising a drain region (24) and a source region (25) of one conductivity type formed in a region of the semiconductor substrate (21) of another conductivity type, characterised by means (34) for electrically connecting the source region (25) directly to the semiconductor substrate (21).
Claim 2
Dependent Claim
67 words
1 . A semiconductor device comprising at least one metal-insulator-semiconductor field effect transistor formed on a semiconductor substrate (21), the field effect traansistor comprising a drain region (24) and a source region (25) of one conductivity type formed in a region of the semiconductor substrate (21) of another conductivity type, characterised by means (34) for electrically connecting the source region (25) directly to the semiconductor substrate (21).
Claim 3
Dependent Claim
98 words
A semiconductor device according to claim 1, further comprising a drain electrode having apoly- crystalline silicon layer (30) formed on the surface of the drain xegion (24) and a metal layer (27) formed on the polycrystalline silicon layer (30), and a source electrode having a metal layer (29) formed directly on the surface of the source region (25), metal from the metal layer (29) of the source electrode being impregnated into the source region (25) and into the semiconductor substrate (21) to form the means (34) for electrically connecting the source region (25) directly to the substrate (21).
Claim 4
Dependent Claim
126 words
A semiconductor device according to claim 1, further comprising a source electrode consisting of a metal layer (29) formed directly on the surface of the source region (25), metal from the metal layer (29) of the source electrode being impregnated into the source region (25) and into the semiconductor substrate (21), to form the means (34) for electrically connecting the source region (25) directly.to the substrate (21), and drain electrode consisting of a metal layer (27, Figure 8) formed directly on the surface of the drain region (24), the depth of the drain region (24) being greater than the source region (25) and being such that the metal impregnated into the drain region (24) from the drain electrode (27) does not reach the semiconductor substrate (21).
Claim 5
Dependent Claim
88 words
A semiconductor device according to claim 1, further comprising drain and source electrodes each including a polycrystalline silicon layer (30, Figure 9) formed on the surface of the drain (24) and source (25) regions, respectively, the source electrode extending across onto the surface of the semiconductor substrate (21) so that the polysilicon layer (30) of the source electrode is in contact with both the source region (25) and the semiconductor substrate (21) and forms the means for electrically connecting the source region (25) directly to the substrate (21).
Claim 6
Dependent Claim
62 words
A semiconductor device according to any one of the preceding claims, further comprising a reference voltage wiring line (4, Figure 10) formed on the surface of the semiconductor substrate (9,21) but not directly electrically connected to the substrate (9,21) and another field effect transistor (6, 7, 8) having a source region (7) which is connected to the reference voltage wiring line (4).
References Cited (Backward Citations)
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