Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
128 words
A method for producing a semiconductor device comprising the steps of: forming, in a well having a first conductivity type and selectively provided in a semiconductor substrate having a second conductivity type, two first impurity regions having the second conductivity type and, in an exposed surface region of the substrate, two second impurity regions having the first conductivity type; and forming, in the well and the exposed surface region of the substrate, a third impurity region by implanting impurity ions of either oen of said first or second conductivity type into the semiconductor substrate to form an electric current channel selectively between the two second impurity regions or between the two first impurity regions so that various integrated circuits can be made by changing the electric current channel.
Claim 2
Independent Claim
128 words
A method for producing a semiconductor device comprising the steps of: forming, in a well having a first conductivity type and selectively provided in a semiconductor substrate having a second conductivity type, two first impurity regions having the second conductivity type and, in an exposed surface region of the substrate, two second impurity regions having the first conductivity type; and forming, in the well and the exposed surface region of the substrate, a third impurity region by implanting impurity ions of either oen of said first or second conductivity type into the semiconductor substrate to form an electric current channel selectively between the two second impurity regions or between the two first impurity regions so that various integrated circuits can be made by changing the electric current channel.
Claim 3
Dependent Claim
18 words
A method according to claim 1, wherein arsenic or phosphorus is used to form said second impurity region.
Claim 4
Dependent Claim
17 words
A method according to claim 1, wherein boron or indium is used to form first impurity region.
Claim 5
Dependent Claim
16 words
A method according to claim 1, wherein arsenic or phosphorus is used as said third impurity.
Claim 6
Dependent Claim
22 words
A method according to claim 1, wherein an integrated circuit of N-channel open-drain output type is formed by said electric current channel.
Claim 7
Dependent Claim
22 words
A method according to claim 1, wherein an integrated circuit of P-channel open-drain output type is formed by said electric current channel.
Claim 8
Dependent Claim
20 words
A method according to claim 1, wherein integrated circuits of both N-channel open-drain type and P-channel open-drain types are formed.
Claim 9
Dependent Claim
16 words
..-8. A method according to claim 1, wherein said electric current channel forms a resistance layer.