Lift-off process for fabricating self-aligned contacts

Abstract

Abstract A process is provided for fabricating self-aligned contacts to the surface of an integrated circuit. The process includes the steps of depositing a layer of silicon dioxide 12 on the surface of a semiconductor structure 10; depositing a layer of polyimide 15 on the surface of the silicon dioxide 12; defining openings 23 in the polyimide material 15 and the silicon dioxide 12 to thereby expose regions of the semiconductor structure 10; and depositing metal 22 across the underlying surface and in the openings 23. In the preferred embodiment metal 22 is substantially the same thickness as silicon dioxide 12, and polyimide material 15 is masked using sequentially deposited layers of silicon dioxide 18 and photoresist 21.

Inventors

• 👤 Alvin Milgram

Bibliographic Details