Patent EP0098737A2 successfully refreshed from Google Patents.
EP0098737A2
Expired / Lapsed
EP
⏱️ 0.0 years remaining
Semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1983-06-29
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Granted: —
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Expires: 2003-06-29
Abstract
Abstract In a semiconductor device comprising: a first transistor having a first gate, said first gate being made of a polycrystalline silicon of a first conductivity type; a second transistor having a second gate, said second gate being made of a polycrystalline silicon of a second conductivity type which is opposite to said first conductivity type, said first and second gates are ohmically connected with a silicide layer to each other.
Inventors
- 👤 Touru Inaba
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 18:17
CPC Classifications
H; H10; H10D; H10D84/00; H10D84/80; H10D84/82; H10D84/83; H10D84/85; H10D84/858; H10W; H10W20/00; H10W20/40; H10W20/45; H10W20/48
Claims Analysis
Total Claims: 6
Claim 1
Independent Claim
72 words
A semiconductor device comprising: a first transistor having a first gate, said first gate being made of a polycrystalline silicon of a first conductivity type; a second transistor having a second gate, said second gate being made of a polycrystalline silicon of a second conductivity type which is opposite to said first conductivity type: characterized in that said first and second gates are ohmically connected with a silicide layer to each other.
Claim 2
Dependent Claim
72 words
A semiconductor device comprising: a first transistor having a first gate, said first gate being made of a polycrystalline silicon of a first conductivity type; a second transistor having a second gate, said second gate being made of a polycrystalline silicon of a second conductivity type which is opposite to said first conductivity type: characterized in that said first and second gates are ohmically connected with a silicide layer to each other.
Claim 3
Dependent Claim
21 words
A semiconductor device according to claim 1, characterized in that said first transistor and said second transistor forms a CMOS transistor.
Claim 4
Dependent Claim
29 words
A semiconductor device according to claim 1, characterized in that said first transistor is a p channel MOS transistor and said second transistor is a n channel MOS transistor.
Claim 5
Dependent Claim
26 words
A semiconductor device according to claim 1 characterized in that said first conductivity type is the p type and said second conductivity type is'the n type.
Claim 6
Dependent Claim
26 words
A semiconductor device according to claim 1, characterized in that said silicide is selected from the group consisting of platinum silicide, molybdenum silicide, and tungsten silicide.
References Cited (Backward Citations)
No citation records indexed.
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