Patent EP0097533A2 successfully refreshed from Google Patents.
EP0097533A2
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A method of manufacturing a MIS type semiconductor device
Assignee: Fujitsu Ltd
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Filing: 1983-06-22
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Granted: —
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Expires: 2003-06-22
Abstract
Abstract In a method of manufacturing an MIS type semiconductor device, an impurity region (16') is formed by implanting ions into a substrate (11) using a plurality of implantation energies and dosages, such that the peak of impurity concentration in the region does not exceed the electrically active solubility of the impurity. The impurity region (16') is then irradiated by an energy beam to activate the implanted impurity (16a, 16b) without any substantial redistribution thereof.
Inventors
- 👤 Toshi C/O Fujitsu Limited Yahano
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 11:57
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/204; H10D; H10D62/00; H10D62/10; H10D62/13; H10D62/149; H10D62/151; H10P30/21; H10P30/212; H10P34/00; H10P34/40; H10P34/42; H10P34/422; H10P95/00; H10P95/90
Claims Analysis
Total Claims: 7
Claim 1
Independent Claim
102 words
A method of manufacturing an MIS type semiconductor device having an impurity region formed in a semiconductor substrate, the method comprising the steps of: implanting impurity ions into the semiconductor substrate using a plurality of implantation energies and implantation dosages, to form the impurity region, the energies and the dosages being selected to provide an impurity distribution in the impurity region having a peak concentration which does not exceed the electrically active solubility of the impurity; and irradiating the impurity region with an energy beam to render the implanted impurity in the region electrically active without any substantial redistribution of the impurity.
Claim 2
Independent Claim
102 words
A method of manufacturing an MIS type semiconductor device having an impurity region formed in a semiconductor substrate, the method comprising the steps of: implanting impurity ions into the semiconductor substrate using a plurality of implantation energies and implantation dosages, to form the impurity region, the energies and the dosages being selected to provide an impurity distribution in the impurity region having a peak concentration which does not exceed the electrically active solubility of the impurity; and irradiating the impurity region with an energy beam to render the implanted impurity in the region electrically active without any substantial redistribution of the impurity.
Claim 3
Dependent Claim
38 words
A method as claimed in claim 1, wherein the substrate is of silicon and the impurity is arsenic respectively, and wherein said peak concentration is controlled so as not to exceed 6 x 10 20 (atm/cm 3 )
Claim 4
Dependent Claim
21 words
A method as claimed in claim 1 or 2, wherein the energy beam is a light beam generated by a lamp.
Claim 5
Dependent Claim
14 words
A method as claimed in claim 3, wherein the lamp is a xenon lamp.
Claim 6
Dependent Claim
15 words
A method.as.claimed in claim 1 or 2, wherein the energy beam is a laser beam.
Claim 7
Independent Claim
15 words
A method as claimed in claim l.or 2, wherein the energy beam is an electron.beam.
References Cited (Backward Citations)
No citation records indexed.
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