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EP0096509A2 Expired / Lapsed EP ⏱️ 0.0 years remaining

Electroluminescent devices

Assignee: National Research Development Corp UK
•
Filing: 1983-05-24
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Granted: —
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Expires: 2003-05-24
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Abstract

Abstract An electroluminescent device (10, ... 60) comprises an electroluminescent layer (11, ... 61) together with a p-type silicon layer (13,... 63) and an n-type silicon layer (14,... 64). The layers (11,13,14,... 61,63,64) constitute a heterojunction or transistor-like structure which limits the total device current during operation. This avoids current runaway experienced in prior art devices, and has been found to extend operating life. The electroluminescent layer (21,31,41) may be in contact with a transition metal oxide layer (25,35,45) to provide self-healing of pinholes. The electroluminescent device (30) may include additional p-type and n-type silicon layers (36 and 37) to provide a degree of current control. The p-type silicon layer (43,53,63) may be connected to an ohmic contact (48,58,68) for control of device current. The silicon layers (13,14,... 63,64,36,37) are either crystalline or amorphous.

Inventors

  • 👤 Haricharan Singh Reehal
  • 👤 Clive Barrington Thomas
  • 👤 Jose Manuel Gallego

Bibliographic Details

Application Number —
Jurisdiction EP
Data Source google_patents
Last Synchronized 2026-10-28 19:39
CPC Classifications
H; H10; H10H; H10H20/00; H10H20/80; H10H20/81; H10H20/811; H10H20/817; H10H20/818

Claims Analysis

Total Claims: 10
Claim 1
Independent Claim 27 words
An electroluminescent device (10,...60) including an electroluminescent layer (11,...61) characterised in that the device also includes a p-type silicon layer (13,...63) and an n-type silicon layer (14,...64).
Claim 2
Dependent Claim 27 words
An electroluminescent device (10,...60) including an electroluminescent layer (11,...61) characterised in that the device also includes a p-type silicon layer (13,...63) and an n-type silicon layer (14,...64).
Claim 3
Dependent Claim 19 words
An electroluminescent device (10,...60) according to claim 1 characterised in that the electroluminescent layer (11,...61) is manganese-doped zinc sulphide.
Claim 4
Dependent Claim 20 words
An electroluminescent device (10,...60) according to claim 2 characterised in that the n-type silicon layer (14,...64) has n + doping.
Claim 5
Dependent Claim 31 words
An electroluminescent device (20,30,40) according to claim 3 characterised in that the electroluminescent layer (21,31,41) is in contact with a transition metal oxide layer (25,35,45) non-contiguous with the silicon layers (23,24,...43,44).
Claim 6
Dependent Claim 24 words
An electroluminescent device (40,50,60) according to any preceding claim characterised in that the p-type silicon layer (43,53,63) is connected to a control electrode (48,58,68).
Claim 7
Dependent Claim 23 words
An electroluminescent device (10,...60) according to any preceding claim characterised in that the electroluminescent layer (11,...61) is up to 0.5 µm in thickness.
Claim 8
Dependent Claim 25 words
An electroluminescent device (10,...60) according to claim 6 characterised in that the p-type silicon layer (13,...63) is between 1 pm and 20 pm in thickness.
Claim 9
Dependent Claim 18 words
An electroluminescent device (50,60) according to any preceding claim characterised in that the silicon layers (53,54,63,64) are amorphous.
Claim 10
Dependent Claim 25 words
An electroluminescent device (30) according to any preceding claim characterised in that the device (30) incorporates additional p-type and n-type silicon layers (36 and 37).

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