Patent EP0094076A2 successfully refreshed from Google Patents.
EP0094076A2
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EP
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Image pickup tube
Assignee: Hitachi Ltd
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Filing: 1983-05-09
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Granted: —
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Expires: 2003-05-09
Abstract
Abstract Disclosed is a high velocity electron beam scanning negatively charge biased image pickup tube comprising a target which includes at least a transparent conductive layer (2), a photoconductor layer (4) and a layer (13) for secondary electron emission on a light-transmissive insulating substrate (1), and in which the transparent conductive layer (2) is arranged on a light incidence side, the photoconductor layer (4) being made of amorphous silicon.
Inventors
- 👤 Chushirou Kusano
- 👤 Sachio Ishioka
- 👤 Yoshinori Imamura
- 👤 Yukio Takasaki
- 👤 Hirofumi Ogawa
- 👤 Tatsuo Makishima
- 👤 Tadaaki Hirai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-06 19:30
CPC Classifications
H; H01; H01J; H01J29/00; H01J29/02; H01J29/10; H01J29/36; H01J29/39; H01J29/45; H01J29/451; H01J29/456
Claims Analysis
Total Claims: 10
Claim 1
Independent Claim
76 words
A high velocity electron beam scanning negatively charge biased image pickup tube comprising a target which includes at least a transparent conductive layer (2), a photoconductor layer (4) and a layer (13) for secondary electron emission on a predetermined light-transmissive insulating substrate (1), and in which said transparent conductive layer (2) is arranged on a light incidence side, characterized in that said photoconductor layer (4) being essentially made of amorphous silicon which contains at least hydrogen.
Claim 2
Dependent Claim
76 words
A high velocity electron beam scanning negatively charge biased image pickup tube comprising a target which includes at least a transparent conductive layer (2), a photoconductor layer (4) and a layer (13) for secondary electron emission on a predetermined light-transmissive insulating substrate (1), and in which said transparent conductive layer (2) is arranged on a light incidence side, characterized in that said photoconductor layer (4) being essentially made of amorphous silicon which contains at least hydrogen.
Claim 3
Dependent Claim
82 words
An image pickup tube as defined in claim 1, characterized in that said photoconductor layer (4) contains at least one element of group-IIIb or group-Vb, and contents of the elements are distributed in a thickness direction of said layer (4) so that the group-IIIb element may assume a maximum content value at a boundary surface of said photoconductor layer (4) with said transparent conductive layer (2), while the group-Vb element may assume a maximum content value on a beam scanning side thereof.
Claim 4
Dependent Claim
32 words
An image pickup tube as defined in claim 2, characterized in that the maximum value of the content of the group-IIIb or group-Vb element is 200 ppm in atomic-% for each group.
Claim 5
Dependent Claim
54 words
An image pickup tube as defined in claim 1 or 2, characterized in that it further comprises at least one of a light-transmissive p-type semiconductor layer (11) between said transparent conductive layer (2) and said photoconductor layer (4), and an n-type semiconductor layer (12) on the beam scanning side of said photoconductor layer (4).
Claim 6
Dependent Claim
35 words
An image pickup tube as defined in claim 4, characterized in that said light-transmissive p-type semiconductor layer (11) is formed of a material in which the hydrogen-containing amorphous silicon is doped with a group-IIIb element.
Claim 7
Dependent Claim
37 words
An image pickup tube as defined in claim 4, characterized in that said light-transmissive p-type semiconductor layer (11) is formed of a material which is an amorphous solid solution consisting of silicon and carbon and containing hydrogen.
Claim 8
Dependent Claim
43 words
An image pickup tube as defined in claim 1 or 2, characterized in that it further comprises a light-transmissive metal film between said transparent conductive layer (2) and said photoconductor layer (4), said film constituting a rectifying heterojunction with the hydrogen-containing amorphous silicon.
Claim 9
Dependent Claim
37 words
An image pickup tube as defined in claim 4, characterized in that said n-type semiconductor layer (12) is formed of amorphous silicon nitride, or a material in which hydrogen-containing amorphous silicon is doped with a group-Vb element.
Claim 10
Dependent Claim
47 words
An image pickup tube as defined in claim 1, 2 or 4, characterized in that said layer (13) for secondary electron emission is a layer which has a secondary emission ratio of at least 1 (one) for bombardment with accelerated electrons of 0.1 kV to 2 kV.
References Cited (Backward Citations)
No citation records indexed.
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