Patent EP0093971A2 successfully refreshed from Google Patents.
EP0093971A2
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Semiconductor device having an interstitial transition element layer and method of manufacturing the same
Assignee: Toshiba Corp
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Filing: 1983-04-28
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Granted: —
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Expires: 2003-04-28
Abstract
Abstract A semiconductor device comprising a semiconductor substrate (1) having an impurity of one conductivity type; a diffusion region extending from a major surface of said semiconductor substrate (1) to an inside thereof, said diffusion region having an impurity of the opposite conductivity type; an interstitial transition element layer (5, 6) which is doped with an impurity of said opposite conductivity type and is formed on said major surface of said semiconductor substrate (1) in ohmic contact with said diffusion region; and a wiring electrode layer (7, 8, 10) connected to said interstitial transition element layer (5, 6). A method for manufacturing the semiconductor device is also provided.
Inventors
- 👤 Shigeo Yawata
- 👤 Shun-Ichi Hiraki
- 👤 Yoshio Yokata
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-09 04:23
CPC Classifications
H; H10; H10P; H10P30/00; H10P30/20; H10P30/202; H10P30/206; H10P14/00; H10P14/40; H10P14/418; H10D; H10D30/00; H10D30/01; H10D30/061; H10D30/0612; H10D30/0616; H10D30/60; H10D30/67; H10D30/6729; H10D30/6737; H10D30/6738; H10D30/674; H10D30/675; H10D64/00; H10D64/01; H10D64/011; H10D64/0116; H10D64/012; H10D64/0124; H10D64/60; H10D64/62; H10D64/64; H10P30/21; H10P30/212; H10P30/218; H10P30/28; H10W; H10W20/00; H10W20/40; H10W20/41; H10W20/44; H10W20/4403; H10W20/4437; H10W20/4441; H10D62/00; H10D62/80; H10D62/85
Claims Analysis
Total Claims: 25
Claim 1
Independent Claim
98 words
A semiconductor device characterised by: a semiconductor substrate (1) having an impurity of one conductivity type; a diffusion region extending from a major surface of said semiconductor substrate (1) to an inside thereof, said diffusion region having an impurity of the opposite conductivity type; an interstitial transition element layer (5, 6) which is doped with an impurity of said opposite conductivity type and is formed on said major surface of said semiconductor substrate (1) in ohmic contact with said diffusion region; and a wiring electrode layer (7, 8, 10) connected to said interstitial transition element layer (5, 6).
Claim 2
Dependent Claim
98 words
A semiconductor device characterised by: a semiconductor substrate (1) having an impurity of one conductivity type; a diffusion region extending from a major surface of said semiconductor substrate (1) to an inside thereof, said diffusion region having an impurity of the opposite conductivity type; an interstitial transition element layer (5, 6) which is doped with an impurity of said opposite conductivity type and is formed on said major surface of said semiconductor substrate (1) in ohmic contact with said diffusion region; and a wiring electrode layer (7, 8, 10) connected to said interstitial transition element layer (5, 6).
Claim 3
Dependent Claim
40 words
A device according to claim 1, characterized in that an interstitial transition element for forming said interstitial transition element layer (5, 6) is at least one element selected from the group consisting of Ti, Hf, Zr, Ta, Nb and Sc.
Claim 4
Dependent Claim
30 words
A device according to claim 1 or 2, characterized in that said interstitial transition element layer (5, 6) contains an element selected from the group consisting of nitrogen and carbon.
Claim 5
Dependent Claim
36 words
A device according to claim 3, characterized in that the content of nitrogen or carbon contained in said interstitial transition element layer (5, 6) falls within a range between 10 atomic % and 80 atomic %.
Claim 6
Dependent Claim
55 words
A device according to claim 1 or 3, characterized in that the impurity in said diffusion region and said interstitial transition element layer (5, 6) is one element selected from the group consisting of P, B, Ge, Si, As, At, Te and Sn, and has a concentration of 1 0 17 to 10 21 cm-3.
Claim 7
Dependent Claim
121 words
A semiconductor device characterised by: a semiconductor substrate (1) of one conductivity type; a diffusion region extending from a major surface of said semiconductor substrate (1) to an inside thereof, said diffusion region having an impurity of the conductivity type opposite to that of the semiconductor substrate; an ohmic contact impurity region formed on a surface layer of said diffusion region at a predetermined diffusion depth; an interstitial transition element layer which is doped with an impurity of said opposite conductivity type and formed on said major surface of said semiconductor substrate (1) through said ohmic contact impurity region in ohmic contact with said diffusion layer; and a wiring electrode layer (7, 8, 10) connected to said interstitial transition element layer.
Claim 8
Dependent Claim
121 words
A semiconductor device characterised by: a semiconductor substrate (1) of one conductivity type; a diffusion region extending from a major surface of said semiconductor substrate (1) to an inside thereof, said diffusion region having an impurity of the conductivity type opposite to that of the semiconductor substrate; an ohmic contact impurity region formed on a surface layer of said diffusion region at a predetermined diffusion depth; an interstitial transition element layer which is doped with an impurity of said opposite conductivity type and formed on said major surface of said semiconductor substrate (1) through said ohmic contact impurity region in ohmic contact with said diffusion layer; and a wiring electrode layer (7, 8, 10) connected to said interstitial transition element layer.
Claim 9
Dependent Claim
40 words
A device according to claim 6, characterized in that an interstitial transition element for forming said interstitial transition element layer (5, 6) is at least one element selected from the group consisting of Ti, Hf, Zr, Ta, Nb and Sc.
Claim 10
Dependent Claim
30 words
A device according to claim 6 or 7, characterized in that said interstitial transition element layer (5, 6) contains an element selected from the group consisting of nitrogen and carbon.
Claim 11
Dependent Claim
36 words
A device according to claim 8, characterized in that a content of nitrogen or carbon contained in said interstitial transition element layer (5, 6) falls within a range between 10 atomic % and 80 atomic %.
Claim 12
Dependent Claim
104 words
A device according to claim 6 or 8, characterized in that the impurity of said diffusion region is one element selected from the group consisting of P, B, Ge, Si, As, At, Te and Sn; the impurity of said interstitial transition element layer (5, 6) and said ohmic contact impurity region is one element selected from the group consisting of As, Ga, Zn, At, S, Si, Ge, In, P, Sb, Te and Sn; and, the impurities of said diffusion region, said interstitial transition element layer (5, 6) and said ohmic contact impurity region have a concentration of 10 17 to 10 21 cm -3
Claim 13
Independent Claim
55 words
A method for manufacturing a semiconductor device, characterised by the steps of : depositing an interstitial transition element layer (13) onto a major surface of a semiconductor substrate; doping an impurity in said semiconductor substrate (1) through said interstitial transition element layer; and selectively etching said interstitial transition element layer (13) to form an electrode.
Claim 14
Independent Claim
55 words
A method for manufacturing a semiconductor device, characterised by the steps of : depositing an interstitial transition element layer (13) onto a major surface of a semiconductor substrate; doping an impurity in said semiconductor substrate (1) through said interstitial transition element layer; and selectively etching said interstitial transition element layer (13) to form an electrode.
Claim 15
Dependent Claim
33 words
A method according to claim 11, characterized in that the step of doping the impurity in said semiconductor substrate (1) includes the step of forming a diffusion layer in said semiconductor substrate (1).
Claim 16
Dependent Claim
39 words
A method according to claim 12, characterized in that an interstitial transition element for forming said interstitial transition element layer (13) is at least one element selected from the group consisting of Ti, Hf, Zr, Ta, Nb and Sc.
Claim 17
Dependent Claim
29 words
A method according to claim 12 or 13, characterized in that said interstitial transition element layer (13) contains an element selected from the group consisting of nitrogen and carbon.
Claim 18
Dependent Claim
35 words
A method according to claim 14, characterized in that the content of nitrogen or carbon contained in said interstitial transition element layer (13) falls within a range between 10 atomic % and 80 atomic %.
Claim 19
Dependent Claim
51 words
A method according to claim 11 or 14, characterized in that the impurity doped in said semiconductor substrate (1) and said interstitial transition element layer (13) is one element selected from the group consisting of As, Ge, P and At, and has a concentration of 10 17 to 10 21 cm-3.
Claim 20
Independent Claim
108 words
A method for manufacturing a semiconductor device, characterised by the steps of: depositing an interstitial transition element layer (13) on a major surface of a semiconductor substrate (1); doping an impurity of one conductivity type for forming an ohmic contact in said semiconductor substrate through said interstitial transition element layer (13); forming a window in a predetermined portion of said interstitial transition element layer (13); ion-implanting an impurity of the opposite conductivity type for forming a diffusion region in said semiconductor substrate (1), using said interstitial transition element layer (13) with said window as a mask; and patterning said interstitial transition element layer (13) to form an electrode.
Claim 21
Independent Claim
108 words
A method for manufacturing a semiconductor device, characterised by the steps of: depositing an interstitial transition element layer (13) on a major surface of a semiconductor substrate (1); doping an impurity of one conductivity type for forming an ohmic contact in said semiconductor substrate through said interstitial transition element layer (13); forming a window in a predetermined portion of said interstitial transition element layer (13); ion-implanting an impurity of the opposite conductivity type for forming a diffusion region in said semiconductor substrate (1), using said interstitial transition element layer (13) with said window as a mask; and patterning said interstitial transition element layer (13) to form an electrode.
Claim 22
Dependent Claim
40 words
A method according to claim 17, characterized in that an interstitial transition element used for forming said interstitial transition element layer (13) is at least one element selected from the group consisting of Ti, Hf, Zr, Ta, Nb and Sc.
Claim 23
Dependent Claim
29 words
A method according to claim 17 or 18, characterized in that said interstitial transition element layer (13) contains an element selected from the group consisting of nitrogen and carbon.
Claim 24
Dependent Claim
35 words
A method according to claim 19, characterized in that the content of nitrogen or carbon contained in said interstitial transition element layer (13) falls within a range between 10 atomic % and 80 atomic %.
Claim 25
Dependent Claim
58 words
A method according to claim 17 or 19, characterized in that the impurity for forming the ohmic contact which is doped in said semiconductor substrate (1) and said interstitial transition element layer (13) is one element selected from the group consisting of As, Ge, P and Aℓ, and has a concentration of 10 17 to 10 21 -3
References Cited (Backward Citations)
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