Patent EP0093557A2 successfully refreshed from Google Patents.
EP0093557A2
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High-speed complementary semiconductor integrated circuit
Assignee: Toshiba Corp
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Filing: 1983-04-22
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Granted: —
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Expires: 2003-04-22
Abstract
Abstract A complementary semiconductor integrated circuit device includes an electrical insulative substrate (10), a p-channel FET (Q 1 ) formed on the substrate (10) and consists of lead chalcogenide based semiconductive material, for example, PbTe, and an n-channel FET (0 2 ) consisting similarly of PbTe and to operates mutually and complementarily with the p-channel FET (Q 1 ). The PbTe constituting the FETs (Q,, Q 2 ) has electron and hole mobilities whose values are each greater by at least about one digit place than the value of a corresponding one of the electron and hole mobilities of silicon material. Accordingly, the device has an increased speed of operation.
Inventors
- 👤 Riro Nii
- 👤 Nobuyuki Toyoda
- 👤 Akimichi Hojo
- 👤 Hisayoshi Yanai
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-27 16:35
CPC Classifications
H; H10; H10D; H10D86/00; H10D62/00; H10D62/80; H10D62/874
Claims Analysis
Total Claims: 12
Claim 1
Independent Claim
95 words
In a semiconductor device having a substrative body (10, 50) and first and second active elements formed on said substrative body (10, 50) and performing a mutual and complementary switching operation, characterized in that said first active element (Q l , Q 3 ) and said second active element (Q 2 , Q 4 ) are each made of lead chalcogenide based semiconductive material having electron and hole mobilities whose values are each greater by at least one digit-place than the value of a corresponding one of the electron and hole mobilities of silicon material.
Claim 2
Dependent Claim
95 words
In a semiconductor device having a substrative body (10, 50) and first and second active elements formed on said substrative body (10, 50) and performing a mutual and complementary switching operation, characterized in that said first active element (Q l , Q 3 ) and said second active element (Q 2 , Q 4 ) are each made of lead chalcogenide based semiconductive material having electron and hole mobilities whose values are each greater by at least one digit-place than the value of a corresponding one of the electron and hole mobilities of silicon material.
Claim 3
Independent Claim
52 words
The device according to claim l, characterized in that said first active element includes a first transistor (Qi, Q 3 ) operating with the holes as its active carriers and said second active element includes a second transistor (Q 2 , Q 4 ) operating with the electrons as its active carriers.
Claim 4
Dependent Claim
18 words
The device according to claim 1, characterized in that said substrative body includes an electrical insulative substrate (10).
Claim 5
Dependent Claim
30 words
The device according to claim 1, characterized in that said substrative body (50) includes an electrical conductive substrate (52) and an electrical insulative film (54) provided on said substrate (52).
Claim 6
Dependent Claim
26 words
The device according to claim 4, characterized in that said insulative film (54) includes a monocrystalline thin film lattice-matched with the lead chalcogenide based semiconductive material.
Claim 7
Dependent Claim
68 words
The device according to claim 1, characterized in that said first active element includes a first field effect transistor (Q l , Q 3 ) having a first semiconductive region corresponding to a channel formed by the holes and said second active element includes a second field effect transistor (Q 2 , Q 4 ) having a second semiconductive region corresponding to a channel formed by the electrons.
Claim 8
Dependent Claim
54 words
The device according to claim 6, characterized in that said substrative body includes an electrical insulative substrate (10) having a surface (l0a) corresponding to a mechanical and chemical finished plane including a cleavage process on which said first and second field effect transistors are so formed as to provide a complementary integrated circuit configuration.
Claim 9
Dependent Claim
47 words
The device according to claim 6, characterized in that said substrative body (50) includes an electrical conductive monocrystalline substrate (52) and an electrical insulative monocrystalline film (54) provided on said substrate (52); and wherein said substrate (52) includes monocrystalline bulk which is lattice-matched with said film (54).
Claim 10
Dependent Claim
20 words
The device according to claim 8, characterized in that said monocrystalline bulk is made of lead chalcogenide based semiconductive material.
Claim 11
Dependent Claim
34 words
The device according to claim 8, characterized in that said lead chalcogenide based semiconductive material is a material selected from the group consisting of lead sulfide (PbS), lead selenide (PbSe), and lead telluride (PbTe).
Claim 12
Dependent Claim
41 words
ll. The device according to claim 8, characterized in that said lead chalcogenide based semiconductive material is a mixed crystal of a plurality of materials selected from the group consisting of lead sulfide (PbS), lead selenide (PbSe) and lead telluride (PbTe).
References Cited (Backward Citations)
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