Patent EP0091651A2 successfully refreshed from Google Patents.
EP0091651A2
Expired / Lapsed
EP
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Method for forming micropattern
Assignee: NTT Inc
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Filing: 1983-04-06
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Granted: —
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Expires: 2003-04-06
Abstract
Abstract A method for forming a micropattern, comprises the steps of forming an organic polymeric material layer (2) on a substrate (1), forming a silicone layer (3) on the organic polymeric material layer (2), selectively irradiating a surface of the silicone layer (3) with a high-energy beam (4), exposing the surface of the silicone layer to a radical addition polymerizable monomer gas (5) so as to form a graft polymer film (6) on an irradiated portion of the surface of the silicone layer (3), performing reactive ion etching using the graft polymer film (6) as a mask so as to form a silicone pattern, and performing reactive ion etching using the silicone pattern as a mask so as to form an organic polymeric material pattern. The method allows formation of a resist pattern with a high precision and a high aspect ratio.
Inventors
- 👤 Toshiaki Tamamura
- 👤 Saburo Imamura
- 👤 Masao Morita
- 👤 Osamu Kogure
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 04:39
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/26; G03F7/265; G03F7/004; G03F7/075; G03F7/0757; G03F7/36; G03F7/38; Y; Y10; Y10S; Y10S438/00; Y10S438/942; Y10S438/948; Y10S438/95
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
134 words
A method for forming a micropattern, comprising the steps of: forming an organic polymeric material layer (2) on a substrate (1); forming a silicone layer (3) on said organic polymeric material layer (2); selectively irradiating a surface of said silicone layer (3) with a high-energy beam; exposing the surface of said silicone layer (3) to a radical addition polymerizable monomer gas (5) so as to form a graft polymer film (6) on an irradiated portion of the surface of said silicone layer (3); performing dry etching using said graft polymer film (6) as a mask so as to form a pattern of said silicone layer (3); and performing dry etching using said pattern of said silicone layer (3) as a mask so as to form a pattern of said organic polymeric material layer (2).
Claim 2
Independent Claim
134 words
A method for forming a micropattern, comprising the steps of: forming an organic polymeric material layer (2) on a substrate (1); forming a silicone layer (3) on said organic polymeric material layer (2); selectively irradiating a surface of said silicone layer (3) with a high-energy beam; exposing the surface of said silicone layer (3) to a radical addition polymerizable monomer gas (5) so as to form a graft polymer film (6) on an irradiated portion of the surface of said silicone layer (3); performing dry etching using said graft polymer film (6) as a mask so as to form a pattern of said silicone layer (3); and performing dry etching using said pattern of said silicone layer (3) as a mask so as to form a pattern of said organic polymeric material layer (2).
Claim 3
Dependent Claim
40 words
A method according to claim 1, characterized in that said step of performing dry etching so as to form said pattern of said silicone layer (3) comprises a reactive ion etching using a mixture of tetrafluoride gas and hydrogen gas.
Claim 4
Dependent Claim
36 words
A method according to claim 1, characterized in that said step of performing dry etching so as to form said pattern of said organic polymeric material layer (2) comprises a reactive ion etching using oxygen gas.
Claim 5
Dependent Claim
18 words
A method according to claim 1, characterized in that said silicone layer (3) comprises a silicone resin layer.
Claim 6
Dependent Claim
23 words
A method according to claim 4, characterized in that said silicone resin layer comprises a ternary curing-type silicone resin having a vinyl group.
Claim 7
Dependent Claim
23 words
A method according to claim 1, characterized in that said organic polymeric material layer (2) is thicker than said silicone resin layer (3).
Claim 8
Dependent Claim
16 words
A method according to claim 1, characterized in that said substrate (1) comprises a silicon substrate.
Claim 9
Dependent Claim
17 words
A method according to claim 1, characterized in that said monomer gas (5) comprises a styrene gas.
Claim 10
Independent Claim
112 words
A method for forming a micropattern, comprising the steps of: forming a ternary curing-type silicone resin layer ( 12 ) of a ternary curing-type silicone resin having a vinyl group on a substrate (11); selectively irradiating a surface of said silicone resin layer (12) with a high-energy beam (13); exposing the surface of said silicone resin layer ( 1 2) to a radical addition polymerizable monomer gas (14) so as to form a graft polymer film (15) on an irradiated portion of said silicone resin layer (12); and performing dry etching using said graft polymer film (15) as a mask so as to form a pattern of said silicone resin layer (12).
Claim 11
Independent Claim
112 words
A method for forming a micropattern, comprising the steps of: forming a ternary curing-type silicone resin layer ( 12 ) of a ternary curing-type silicone resin having a vinyl group on a substrate (11); selectively irradiating a surface of said silicone resin layer (12) with a high-energy beam (13); exposing the surface of said silicone resin layer ( 1 2) to a radical addition polymerizable monomer gas (14) so as to form a graft polymer film (15) on an irradiated portion of said silicone resin layer (12); and performing dry etching using said graft polymer film (15) as a mask so as to form a pattern of said silicone resin layer (12).
Claim 12
Dependent Claim
39 words
A method according to claim 9, characterized in that said step of performing dry etching for forming said pattern of said silicone resin layer (12) comprises a reactive ion etching using a mixture of tetrafluoride gas and hydrogen gas.
Claim 13
Dependent Claim
16 words
A method according to claim 9, characterized in that said substrate (11) comprises a silicon substrate.
Claim 14
Dependent Claim
17 words
A method according to claim 9, characterized in that said monomer gas (14) comprises a styrene gas.
References Cited (Backward Citations)
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