Patent EP0091507A2 successfully refreshed from Google Patents.
EP0091507A2
Expired / Lapsed
EP
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Method of manufacturing a semi-conductor device comprising dielectric isolation regions
Assignee: Toshiba Corp
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Filing: 1982-09-29
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Granted: —
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Expires: 2002-09-29
Abstract
Abstract The invention provides a method for manufacturing a semiconductor device, comprising the steps of: forming a mask material pattern (104a, 104b) at least on a portion of a semiconductor layer (103) which corresponds to a prospective element formation region; etching the semiconductor layer (103), using the mask material pattern (104a, 104b), to form a first groove which is wide and shallow; burying a first isolating material (105) in the first groove to a thickness substantially equal to the depth of the first groove; etching a portion of the first isolating material film (105) which is located in the vicinity of the prospective element formation region to partially expose a bottom of the first groove, thereby forming a second groove which is narrower than said first groove, a position of the second groove being defined by the mask material pattern (104b); forming a third groove which is deeper than said first and second grooves by etching a bottom of the second groove; and burying a second isolating material (108) in the third groove.
Inventors
- 👤 Shuichi Kameyama
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-10-30 23:31
CPC Classifications
H; H10; H10W; H10W10/00; H10W10/01; H10W10/011; H10W10/014; H10W10/0143; H10W10/0145; H10W10/10; H10W10/17
Claims Analysis
Total Claims: 14
Claim 1
Independent Claim
170 words
A method for manufacturing a semiconductor device, characterized by comprising the steps of: forming a mask material pattern (104a, 104b) at least on a portion of a semiconductor layer (103) which corresponds to a prospective element formation region; etching said semiconductor layer (103), using said mask material pattern (104a, 104b), to form a first groove which is wide and shallow; burying a first isolating material (105) in said first groove to a thickness substantially equal to the depth of said first groove; etching a portion of said first isolating material film (105) which is located in the vicinity of said prospective element formation region to partially expose a bottom of said first groove, thereby forming a second groove which is narrower than said first groove, a position of said second groove being defined by said mask material pattern (104b); forming a third groove which is deeper than said first and second grooves etching a bottom of said second groove; and burying a second isolating material (108) in said third groove.
Claim 2
Independent Claim
170 words
A method for manufacturing a semiconductor device, characterized by comprising the steps of: forming a mask material pattern (104a, 104b) at least on a portion of a semiconductor layer (103) which corresponds to a prospective element formation region; etching said semiconductor layer (103), using said mask material pattern (104a, 104b), to form a first groove which is wide and shallow; burying a first isolating material (105) in said first groove to a thickness substantially equal to the depth of said first groove; etching a portion of said first isolating material film (105) which is located in the vicinity of said prospective element formation region to partially expose a bottom of said first groove, thereby forming a second groove which is narrower than said first groove, a position of said second groove being defined by said mask material pattern (104b); forming a third groove which is deeper than said first and second grooves etching a bottom of said second groove; and burying a second isolating material (108) in said third groove.
Claim 3
Dependent Claim
25 words
A method according to claim 1, characterized in that the step of forming said second groove is performed by using another mask material pattern (106).
Claim 4
Dependent Claim
69 words
A nethod according to claim 2, characterized in that the step of forming said second groove comprises the steps of forming said another mask material pattern (106) on a surface portion of said first isolating material film (105) in said first groove which is spaced apart for a distance large enough to form said second groove in the vicinity of said prospective element formation region, and performing anisotropic etching.
Claim 5
Dependent Claim
47 words
A method according to claim 2, characterized in that the step of forming said second groove comprises the steps of forming said another mask material pattern (106) to cover the entire surface of said first isolating material film (105) in said first groove, and performing isotropic etching.
Claim 6
Dependent Claim
28 words
A method according to claim 1, characterized in that the step of forming said second groove is performed by the lift-off method using said mask material pattern (104b).
Claim 7
Independent Claim
47 words
A method according to claim '1, characterized in that said first and second isolating materials (105, 108) are materials selected from the group consisting of Si0 2 , S i 3 N 4 , Aℓ 2 O 3 , p hospho-silicate glass, arseno-silicate glass and boro-silicate glass.
Claim 8
Dependent Claim
24 words
A method according to claim 1, characterized in that said first isolating material (105) comprises an insulating material and a conductive material surrounded thereby.
Claim 9
Dependent Claim
26 words
A method according to claim 7, characterized in that said conductive material comprises a material selected from the group consisting of polycrystalline silicon and metal silicides.
Claim 10
Dependent Claim
37 words
A method according to claim 1, characterized in that the step of filling said first groove with said first isolating material (105) comprises the step of depositing said first isolating material (105) to cover the entire surface.
Claim 11
Dependent Claim
34 words
A method according to claim 1, characterized in that the step of filling said first groove with said first insulating material (105) comprises the step of oxidizing an inner wall of said first groove.
Claim 12
Dependent Claim
40 words
A method according to claim 1, characterized in that the step of filling said first groove with said first insulating material (105) comprises the steps of depositing a material to be oxidized in said first groove and oxidizing said material.
Claim 13
Dependent Claim
70 words
A method according to claim 1, characterized in that the step of filling said third groove with said second isolating material (108) comprises the steps of depositing said second isolating material (108) to cover the entire surface to a thickness greater than half the width of said third groove, and etching back said second isolating material (108) to expose a surface portion of a region except for said second groove.
Claim 14
Dependent Claim
37 words
A method according to claim 1, further characterized by including the step of forming a channel cut region (107a, 107b) by doping an impurity in a bottom of said third groove after said third groove is formed.
References Cited (Backward Citations)
No citation records indexed.
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