Patent EP0090669A2 successfully refreshed from Google Patents.
EP0090669A2
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Electromagnetic radiation detector
Assignee: Honeywell Inc
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Filing: 1983-03-31
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Granted: —
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Expires: 2003-03-31
Abstract
Abstract The electromagnetic radiation sensitive detector comprises a substrate (10), a first layer (12) on the substrate of radiation sensitive semiconductor material of a given conductivity type and having a first energy bandgap, at least one ohmic contact (16) providing electrical communication with the first layer, and a second layer (14) of semiconductor material of the same conductivity type as the first layer but having an energy bandgap greater than that of the first layer, the second layer being located on the first layer (12) beneath the or each contact (16) to which minority carriers are attracted from the first layer to enhance the responsivity of the detector.
Inventors
- 👤 David K. Arch
- 👤 Walter M. Dr. Scott
- 👤 Darryl Lyle Smith
- 👤 Leonard R. Weisberg
- 👤 Roland A. Wood
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-05 22:32
CPC Classifications
H; H10; H10F; H10F77/00; H10F77/10; H10F77/12; H10F77/124; H10F77/1248; H10D; H10D64/00; H10D64/01; H10D64/011; H10F30/00; H10F30/10; H10F30/20; H10F30/21; H10F30/22; H10F30/222; H10F77/123; H10F77/1237
Claims Analysis
Total Claims: 9
Claim 1
Independent Claim
99 words
A semiconductor device comprising a substrate; a first layer on said substrate of electromagnetic radiation sensitive semiconductor material of a given conductivity type and having a first energy bandgap; and at least one ohmic contact for providing electrical communication with said first layer; characterized by a second layer (14) of semiconductor material of the same conductivity type as said first layer but having a second energy bandgap greater than said first energy bandgap,said second layer being located on said first layer (12) beneath the or each ohmic contact (16) to which minority carriers are attracted from said first layer.
Claim 2
Dependent Claim
99 words
A semiconductor device comprising a substrate; a first layer on said substrate of electromagnetic radiation sensitive semiconductor material of a given conductivity type and having a first energy bandgap; and at least one ohmic contact for providing electrical communication with said first layer; characterized by a second layer (14) of semiconductor material of the same conductivity type as said first layer but having a second energy bandgap greater than said first energy bandgap,said second layer being located on said first layer (12) beneath the or each ohmic contact (16) to which minority carriers are attracted from said first layer.
Claim 3
Dependent Claim
57 words
The semiconductor device according to Claim 1, characterized in that said first layer (12) of semiconductor material is Hg 1-x Cd x Te, x being a number between 0.1, and 0.4; and in that said second layer of semiconductor material is Hg 1-y Cd y Te, y being a number greater than x but less than unity.
Claim 4
Dependent Claim
17 words
The semiconductor device according to Claim 2, characterized in that y exceeds x by at least 0.01.
Claim 5
Dependent Claim
21 words
The semiconductor device according to any of Claims 1, 2 or 3, characterized in that said semiconductor material is of n-type.
Claim 6
Dependent Claim
30 words
The semiconductor device of Claim 1, characterized in that said semiconductor material is In.Sb, InAs x Sb 1-x , In x Ga 1-x Sb or Pb 1-x Sn x Te.
Claim 7
Dependent Claim
50 words
A semiconductor device according to Claim 2 or 3, characterized in that said layer of Hg 1-x Cd x Te has a thickness from 5x10 cm to 15-10 cm and said layer of Hg 1-y Cd y Te has a thickness from 10 -4 cm to 10 -3 cm .
Claim 8
Dependent Claim
20 words
The semiconductor device according to any of the preceding Claims, characterized in that the ohmic contact material is of indium.
Claim 9
Dependent Claim
22 words
The semiconductor device according to any one of the preceding Claims, characterized in that the semiconductor material is produced by epitaxial formation.
References Cited (Backward Citations)
No citation records indexed.
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