Patent EP0090615A2 successfully refreshed from Google Patents.
EP0090615A2
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EP
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Method for forming fine resist patterns
Assignee: Hitachi Ltd
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Filing: 1983-03-25
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Granted: —
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Expires: 2003-03-25
Abstract
Abstract A fine resist pattern having high sensitivity and steeply improved residual film ratio is obtained by forming a multilayer film (2, 3) consisting of organic substances on a substrate (1), making an upper layer (3) of said multilayer film contain metal elements, irradiating said multilayer film with light or radiation (7), and developing with plasma.
Inventors
- 👤 Yuuichi Kokaku
- 👤 Makoto Kitoo
- 👤 Yoshinori Honda
Bibliographic Details
Application Number
—
Jurisdiction
EP
Data Source
google_patents
Last Synchronized
2026-11-08 18:13
CPC Classifications
G; G03; G03F; G03F7/00; G03F7/004; G03F7/09; G03F7/095; G03F7/094
Claims Analysis
Total Claims: 8
Claim 1
Independent Claim
74 words
A method of forming a fine resist pattern on a substrate (1), characterised by forming a multilayer film (2,3;4,5,6) consisting of organic substances on the substrate (1), the multilayer film comprising an upper layer (3;5) of a substance having a relatively low rate of plasma development and a lower layer (2;4) having a relatively high rate of plasma development; irradiating said multilayer film with light or radiation (7); and developing it with a plasma.
Claim 2
Independent Claim
74 words
A method of forming a fine resist pattern on a substrate (1), characterised by forming a multilayer film (2,3;4,5,6) consisting of organic substances on the substrate (1), the multilayer film comprising an upper layer (3;5) of a substance having a relatively low rate of plasma development and a lower layer (2;4) having a relatively high rate of plasma development; irradiating said multilayer film with light or radiation (7); and developing it with a plasma.
Claim 3
Independent Claim
60 words
A method for forming a fine resist pattern on a substrate (1) characterized by forming a multilayer film (2,3;4,5,6) consisting of organic substances on the substrate (1), at least one layer (3;5) other than the lowest layer (2;4) of said multilayer film containing a metal element; irradiating said multilayer film with light or radiations (7), and developing it with plasma.
Claim 4
Independent Claim
60 words
A method for forming a fine resist pattern on a substrate (1) characterized by forming a multilayer film (2,3;4,5,6) consisting of organic substances on the substrate (1), at least one layer (3;5) other than the lowest layer (2;4) of said multilayer film containing a metal element; irradiating said multilayer film with light or radiations (7), and developing it with plasma.
Claim 5
Dependent Claim
29 words
A method for forming a fine resist pattern according to claim 2 wherein said metal element is at least one metal element selected from Si, A1, Sn and Pb.
Claim 6
Dependent Claim
42 words
A method for forming a fine resist pattern according to claim 2 or 3, wherein the 1ayer(3;5) containing said metal element is developed with a plasma containing halogen compound gas and the other layers (2;4) are developed with a plasma containing oxygen.
Claim 7
Independent Claim
32 words
A method for forming a fine resist pattern according to any one of claims 1 to 4 wherein at least one layer (3;5,6) of said multilayer film is formed by plasma polymerization.
Claim 8
Dependent Claim
58 words
A method for forming a fine resist pattern according to claim 5 wherein at least one layer of organic thin film (2;4) is formed on the substrate and thereafter an uppermost plasma polymerized film is formed on the thin film by plasma polymerizing a mixed gas of an organosilicon compound with an organic compound containing an epoxy group.
References Cited (Backward Citations)
No citation records indexed.
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